• Nuclear Engineering and Technology
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• v.35 no.3
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• pp.226-233
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• 2003

The discharge characteristics of a prototype ion source was investigated, which was developed and upgraded for the NBI (Neutral Beam Injection) heating system of KSTAR (Korea Superconducting Tokamak Advanced Research). The ion source was designed for the arc discharge of magnetic bucket chamber with multi-pole cusp fields. The ion source was discharged by the emission-limited mode with the control of filament heating voltage. The maximum ion density was 4 times larger than the previous discharge controlled by a space-charge-limited mode with fully heated filament. The plasma (ion) density and arc current were proportional to the filament voltage, but the discharge efficiency was inversely proportional to the operating pressure of hydrogen gas. The maximum ion density and arc current were obtained with constant arc voltage ($80{\sim}100V$), as $8{\times}10^{11}cm^{-3}$ and 1200 A, respectively. The estimated maximum beam current was about 35 A, extracted by the accelerating voltage of 80kV.

• Proceedings of the KSME Conference
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• 2008.11a
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• pp.1259-1264
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• 2008

This paper presents an accelerated life test for burn out of tungsten filament of automotive halogen lamp. There are many failure modes and failure factors that associated with tungsten filament. But in this explain the dominant failure mode of tungsten filament is the bumout of the filament failure. At first, over voltage, high temperature, inrush current and vibration are selected as stress factors by using of two stage Quality Function Deploymeng(QFD). And we planed accelerated life test that has one factor(voltage) and three levels. By experiment it has absorbed that over voltage has an effect on the life of halogen lamp. Using ALTA programs, we estimated the common shpae parament of Weibull distribution, life-stress relationship and $B_{100p}$ life.

• Journal of the Korean institute of surface engineering
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• v.39 no.3
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• pp.87-92
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• 2006

The characteristic of interface layer and the effect of bias voltage on the microstructure of c-BN films were studied in the microwave plasma hot filament C.V.D process. c-BN films were deposited on a high speed steel(SKH-51) substrate by hot filament CVD technique assisted with a microwave plasma to develop a high performance of resistance coating tool. c-BN films were obtained at a gas pressure of 20 Torr, vias voltage of 300 V and substrate temperature of $800^{\circ}C$ in $B_2H_6-NH_3-H_2$ gas system. It was found that a thin layer of hexagonal boron nitride(h-BN) phase exists at the interface between c-BN layer and substrate.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.1
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• pp.89-93
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• 2012

c-BN films were deposited on SKH-51 steels by electron assisted hot filament CVD method and microstructure development was studied processing parameters such as bias voltage, temperature, etching and phase transformation at boundary layer between BN compound and steel to develop a high performance wear resistance tools. A negative bias voltage higher than 200V at substrate temperature of $800^{\circ}C$ and gas pressure of 20 torr in B2H6-NH3-H2 gas system was one of optimum conditions to produce c-BN films on the SKH-51 steels. Thin layer of hexagonal boron nitride phase was observed at the interface between c-BN layer and substrate.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2009.10a
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• pp.587-588
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• 2009

• Proceedings of the KIPE Conference
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• 2007.11a
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• pp.47-49
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• 2007

For the magnetron, two kinds of auxiliary power is required to generate proper heat and electromagnetic field. In this paper the development of filament power supply and magnet power supply for high power industrial magnetron is studied. The filament power supply which is generate proper heat, even it doesn't require high power like main power supplies, has many consideration such as high voltage insulation and power control coordinated with high voltage cathod current to maintain constant heat generation. The novel control method using constant resistance control is proposed for accurate control of filament power supply.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.1
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• pp.6-11
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• 2004

The characteristics of interface layer and the effect of bias voltages on the nucleation density and heteroepitaxial growth of diamond films were studied in the hot filament CVD diamond process. Diamond films were deposited on a high speed steel (SKH-51) substrate by bias-assisted hot filament CVD technique with a titanium interlayer. The bias applied for enhancing the emission of electrons from the filament increased the nucleation density and achieving heteroepitaxial growth of CVD diamond. Diamond films obtained at a gas pressure of 20 torr; a bias voltage of 200 V and a substrate temperature of $700^{\circ}C$. Titanium was a suitable element as an interlayer for the diamond deposition on steel because it has high diffusivity of Fe and C as a carbide forming element.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.210-210
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• 2000

Vertically well aligned multi-wall carbon nanotubes (CNT) were grown on nickel coated glass substrates by plasma enhanced hot filament chemical vapor deposition at low temperatures below 600$^{\circ}C$. Acetylene and ammonia gas were used as the carbon source and a catalyst. Effects of growth parameters such as pre-treatment of substrate, plasma intensity, filament current, imput gas flow rate, gas composition, substrate temperature and different substrates on the growth characteristics of CNT were systematically investigated. Figure 1 shows SEM image of CNT grown on Ni coated glass substrate. Diameter of nanotube was 30 to 100nm depending on the growth condition. The diameter of CNT decreased and density of CNT increased as NH3 etching time etching time increased. Plasma intensity was found to be the most critical parameter to determine the growth of CNT. CNT was not grown at the plasma intensity lower than 500V. Growth of CNT without filament current was observed. Raman spectroscopy showed the C-C tangential stretching mode at 1592 cm1 as well as D line at 1366 cm-1. From the microanalysis using HRTEM, nickel cap was observed on the top of the grown CNT and very thin carbon amorphous layer of 5nm was found on the nickel cap. Current-voltage characteristics using STM showed about 34nA of current at the applied voltage of 1 volt. Electron emission from the vertically well aligned CNT was obtained using phosphor anode with onset electric field of 1.5C/um.

• Korean Journal of Materials Research
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• v.34 no.3
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• pp.152-162
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• 2024

In this study, we introduce a novel TiN/Ag embedded TiO₂/FTO resistive random-access memory (RRAM) device. This distinctive device was fabricated using an environmentally sustainable, solution-based thin film manufacturing process. Utilizing the peroxo titanium complex (PTC) method, we successfully incorporated Ag precursors into the device architecture, markedly enhancing its performance. This innovative approach effectively mitigates the random filament formation typically observed in RRAM devices, and leverages the seed effect to guide filament growth. As a result, the device demonstrates switching behavior at substantially reduced voltage and current levels, heralding a new era of low-power RRAM operation. The changes occurring within the insulator depending on Ag contents were confirmed by X-ray photoelectron spectroscopy (XPS) analysis. Additionally, we confirmed the correlation between Ag and oxygen vacancies (V_o). The current-voltage (I-V) curves obtained suggest that as the Ag content increases there is a change in the operating mechanism, from the space charge limited conduction (SCLC) model to ionic conduction mechanism. We propose a new filament model based on changes in filament configuration and the change in conduction mechanisms. Further, we propose a novel filament model that encapsulates this shift in conduction behavior. This model illustrates how introducing Ag alters the filament configuration within the device, leading to a more efficient and controlled resistive switching process.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.4
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• pp.585-589
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• 2012

The characteristics of interface layer and the effect of mole fraction of inlet gas mixture($B_2H_6/H_2/N_2/TiCl_4$) on the microstructure of Ti(B,N) films were studied by microwave plasma hot filament CVD process. Ti(B,N) films were deposited on a substrate(STD-61) to develop a high performance of resistance wear coating tool. Ti(B,N) films were obtained at a gas pressure of 1 torr, bias voltage of 300 V and substrate temperature of $480^{\circ}C$ in $B_2H_6/H_2/N_2/TiCl_4$gas system. It was found that TiN, $TiB_2$, TiB and hexagonal boron nitride(h-BN) phases exist in thin layer on the STD-61.