• KIEE International Transactions on Electrophysics and Applications
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• 제5C권5호
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• pp.214-216
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• 2005

Photoreflectance (PR) has been measured to investigate the characterization of the $Al_{0.20}Ga_{0.80}As$/GaAs heterostructures. In the PR spectrum, the 'C' peak is confirmed as the carbon defect with residual impurity originating from the growth process. After annealing, binding energy is relatively weak with As evaporation being done to increase Ga. Also obtained is the electric field value according to annealing temperature ($300{\sim}800^{\circ}C$).

• Transactions on Electrical and Electronic Materials
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• 제13권3호
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• pp.121-124
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• 2012

Olivine type $LiFePO_4$ cathode material was synthesized by solid-state reaction method including one-step heat treatment. To improve the electrochemical characteristics, graphite nanofiber (GNF) was added into $LiFePO_4$ cathode material. The structure and morphological performance of $LiFePO_4$ were investigated by X-ray diffraction (XRD); and a field emission-scanning electron microscope (FE-SEM). The synthesized $LiFePO_4$ has an olivine structure with no impurity, and the average particle size of $LiFePO_4$ is about 200~300 nm. With graphite nanofiber added, the discharge capacity increased from 113.43 mAh/g to 155.63 mAh/g at a current density of 0.1 $mA/cm^2$. The resistance was also significantly decreased by the added graphite nanofiber.

• Journal of Magnetics
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• 제18권3호
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• pp.221-224
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• 2013

Electron paramagnetic resonance (EPR) spectra of $Mn^{2+}$ impurity ion in Stoichiometric $LiNbO_3$ single crystal (SLN) was investigated with an X-band EPR spectrometer in the temperature range of 3 K~296 K. The intensity of EPR spectrum of $Mn^{2+}$ ion was increased to 20 K and decreased again below 20 K as the temperature decreases. The zero-field splitting parameter D decreased as the temperature increases. It was suggested that $Mn^{2+}$ ion substitute for $Nb^{5+}$ ion instead of $Li^+$ ion. No changes for hyperfine interaction of $Mn^{2+}$ ion was obtained in the temperature range of 3 K~296 K.

• 한국자기공명학회논문지
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• 제27권4호
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• pp.28-34
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• 2023

We study the linear-nonlinear quantum transport theory of Wannier-Landau transition system in the confinement of electrons by a square well confinement potential. We use the projected Liouville equation method with the ensemble density projection technique. We select the dynamic value under a linearly oscillatory external field. We derive the dynamic value formula and the memory factor functions in three electron phonon coupling systems and electron impurity coupling systems of two transition types, the intra-band transitions and inter-band transitions. We obtain results that can be applied directly to numerical analyses. For simple example of application, we analyze the absorption power and line-widths of ZnO, through the numerical calculation of the theoretical result in the Landau system.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1992년도 하계학술대회 논문집 B
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• pp.816-819
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• 1992

Binary compound semiconductor InSb crystal which has direct-transition energy gap (0.17 ev) grown by vertical Bridgman method, then the electric-magnetic and optical properties of InSb crystal were surveyed. The growth rate of the crystals was 1mm/hr and the lattice constant $a_\circ$ of the grown crystal was 6.4863$\AA$. The electrical properties were examined by the Hall effect measurement with the van der Pauw method in the temperature range of 70$\sim$300K, magnetic field range of 500$\sim$10000 gauss. The undoped InSb crystal was n-type, the concentration and the electron mobility were 2$\sim$6 ${\times}$ $10^{16}$$\textrm{cm}^{-3}$ and carrier mobility was 6$\sim$2${\times}$$10^{4}$$cm^{2}$/v.sec at 300K, respectively. The carrier mobility was decreased with $T^{-1/2}$ due to the lattice scattering above 100K, and decreased by impurity scattering below100K. The magnetoresistance was increased 190% at 9000 gauss as compared with non-appliced magnetic field and the magnetoresistance was increased with increasing the magnetic field. Also, the Hall voltage was increased with increasing the magnetic field and decreasing the thickness of sample. The optical energy band gap of InSb at room temperature determined using the IR spectrometer was 0.167eV. The diffusion depth of Zn into InSb proportionally increased with the square root of diffusion time and the activation energy for Zn diffusion was 0.67eV. The temperature dependence of diffusion coefficient was $D=4.25{\times}10^{-3}$exp (-0.67/$K_BT$).

• 전기의세계
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• 제22권2호
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• pp.57-69
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• 1973

The aim of this study was to investigate the behaviors of plasma jet under coaxial magnetic field in paralled with it for controlling optical characteristics and input power of plasma jet without impurity and instability of arc plasma column. Because the discharge characteristics of plasma jet were so distinctively different according to the existence or non-existence of magnetic field, the input power, luminous intensity of plasma jet and thermal efficiency were comparatively studied in respect of such variables as arc current, gap of electrode, quantity of argon flow, magnetic flux density, diameter and length of nozzle, with the use of several materials which were different in diameter and length of nozzel. The results were as follows; 1) The voltage tends to show a drooping characteristic at law current and then rises gradually. The luminous intensity of plasma jet increases exponentially with arc current. 2) Arc voltage increases and luminous intensity tends to decrease gradually as gap of electrode increases. 3) Arc voltage and luminous intensity tends to decrease gradually as gap of electrode increases. 3) Arc voltage and luminous intensity increase in accordance with the quantity of argon flow. 4) At first step, arc voltage increases to maximum value with the growth of flux density and then tends to show a gradual decrease. Luminous intensity decreases with the growth flux density. 5) Arc voltage decreases as the constriction length of nozzle increases, maximum decrease is shown at the constriction length of 20(mm) and it increases beyond that value. The luminous intensity decreases as the constriction length grows. 6) Arc voltage and luminous in tensity increase with the growth of diameters of nozzle. 7) Thermal efficiency has values between 50% and 75%, being influenced by arc current, the quantity of argon flow, flux density, the length of electrode gap and the constriction length of nozzle.

• 한국세라믹학회지
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• 제53권4호
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• pp.463-467
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• 2016

$Si^{4+}-N^{3-}$ was incorporated into $Ce^{3+}-doped$ lutetium aluminum garnet ($Lu_{2.965}Ce_{0.035}Al_5O_{12}$, $LuAG:Ce^{3+}$) lattices, resulting in the formation of $Lu_{2.965}Ce_{0.035}Al_{5-x}Si_xO_{12-x}N_x$ [(Lu,Ce)AG:xSN]. For x = 0-0.25, the synthesized powders consisted of the LuAG single phase, and the lattice constant decreased owing to the smaller $Si^{4+}$ ions. However, for x > 0.25, a small amount of unknown impurity phases was observed, and the lattice constant increased. Under 450 nm excitation, the PL spectrum of $LuAG:Ce^{3+}$ exhibited the green band, peaking at 505 nm. The incorporation of $Si^{4+}-N^{3-}$ into the $Al^{3+}-O^{2-}$ sites of $LuAG:Ce^{3+}$ led to a red-shift of the emission peak wavelength from 505 to 570 nm with increasing x. Corresponding CIE chromaticity coordinates varied from the green to yellow regions. These behaviors were discussed based on the modification of the $5d^1$ split levels and crystal field surroundings of $Ce^{3+}$, which arose from the Ce-(O,N)8 bonds.

• 한국진공학회지
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• 제16권3호
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• pp.205-209
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• 2007

Atomic layer deposition(ALD)를 이용하여 Si와 soda lime glass 기판 위에 ZnO 박막을 증착하였다. 기판의 온도는 비교적 저온인 $130^{\circ}C{\sim}150^{\circ}C$를 채택하였다. 증착결과 단위 cycle 당 $2.72{\AA}$이 증착되어 균일한 박막이 증착되었음이 확인되었다. 증착된 박막의 결정성을 X-ray diffraction(XRD)으로 조사해본 결과 비교적 저온에서도 (100)과 (101)방향의 성장이 우세하였다. 또 Auger electron spectroscopy(AES)로 분석해본 결과 불순물이 없는 순도 높은 박막이 성장되었음을 알 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.237-242
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• 2001

The stochiometric mix of evaporating materials for the CuGaSe$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CuGaSe$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 610$^{\circ}C$ and 450$^{\circ}C$, respectively The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the CuGaSe$_2$ single crystal thin film, we have found that the values of spin orbit splitting Δ So and the crystal field splitting ΔCr were 91 meV and 249.8 meV at 20 K, respectively. From the Photoluminescence measurement on CuGaSe$_2$ single crystal thin film, we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton (D$^{\circ}$,X) having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy 7f neutral acceptor bound excision were 8 meV and 35.2 meV, respectivity. By Haynes rule, an activation energy of impurity was 355.2 meV

• Elastomers and Composites
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• 제31권5호
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• pp.335-340
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• 1996

In order to look into the internal structure and the properties in the silicone rubbers added reinforcing fillers; silica $additives(O{\sim}140phr)$, and to examine the behavior of charged particles, the properties of thermally stimulated current(TSC) and X-Ray diffraction are investigated, respectively. And then, from the TSC which are formed by applying the electric field of $2{\sim}5kV/mm$ to specimen at the temperature range from -150 to $260^{\circ}C$, the results are as follwing: In the case of non-filled specimen, four peaks of ${\delta},\;{\gamma},\;{\beta}\;and\;{\alpha}$ are obtained at the temperature of $-120^{\circ}C,\;-60^{\circ}C,\;20^{\circ}C\;and\;130^{\circ}C$, respectively and the case of filled specimen, three peaks of ${\delta},\;{\alpha}_2\;and\;{\alpha}_1$ are observed at the temperature of $-120^{\circ}C,\;80^{\circ}C\;and\;130^{\circ}C$, respectively. The origins of these peaks are that, the ${\delta}$ peak seems to the result from the contribution of side chain methyl radical, and the ${\gamma}$ peak from the depolarization of space charge polarization owing to be added impurity during manufacturing specimens, and the ${\beta}$ peak from the orientation of $Si-CH_3$ dipole, and the ${\alpha}_2$ near the temperature of $80^{\circ}C$ from hydroxyl in carboxylic radical, and finally, the ${\alpha}_1$ peak near the temperature of $130^{\circ}C$ from carboxyl acid that is formed by the thermal oxidation of high temperature.