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Investigation of $Al_{x}Ga_{1-x}As$/GaAs Heterostructure by Annealing at $300{\sim}800^{\circ}C$  

Yu Jae-In (Department of Physics, Yeungnam University)
Park Hun-Bo (Department of Physics, Yeungnam University)
Kim Dong-Lyeul (Department of Physics, Yeungnam University)
Bae In-Ho (Department of Physics, Yeungnam University)
Yun Jae-Gon (Advanced Materials, TAE YANG ELECTRONICS. CO., LTD.)
Kim Ki-Hong (Department of Visual Optics, Kyungwoon University)
Publication Information
KIEE International Transactions on Electrophysics and Applications / v.5C, no.5, 2005 , pp. 214-216 More about this Journal
Abstract
Photoreflectance (PR) has been measured to investigate the characterization of the $Al_{0.20}Ga_{0.80}As$/GaAs heterostructures. In the PR spectrum, the 'C' peak is confirmed as the carbon defect with residual impurity originating from the growth process. After annealing, binding energy is relatively weak with As evaporation being done to increase Ga. Also obtained is the electric field value according to annealing temperature ($300{\sim}800^{\circ}C$).
Keywords
PR; AlGaAs; GaAs; Heterostructure;
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