• Transactions on Electrical and Electronic Materials
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• 제3권1호
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• pp.4-8
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• 2002

The typical mold method for FED (field emission display) fabrication is used to form a gate electrode, a gate oxide layer, and emitter tip after fabrication of a mold shape using wet-etching of Si substrate. However, in this study, new mold method using a side wall space structure was developed to make sharp emitter tips with the gate electrode. In new method, gate oxide layer and gate electrode layer were deposited on a Si wafer by LPCVD (low pressure chemical vapor deposition), and then BPSG (Boro phosphor silicate glass) thin film was deposited. After then, the BPSG thin film was flowed into the mold at high temperature in order to form a sharp mold structure. TiN was deposited as an emitter tip on it. The unfinished device was bonded to a glass substrate by anodic bonding techniques. The Si wafer was etched from backside by KOH-deionized water solution. Finally, the sharp field emitter array with gate electrode on the glass substrate was formed.

• 진공이야기
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• 제2권2호
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• pp.24-28
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• 2015

The brightness of an electron source, along with the aberrations of an objective lens, determines the image resolution and beam current on samples, which are two important parameters for evaluating the performance of an electron microscope. Here we introduce thermal electron source, Schottky emitter and cold field electron emitter. Thermal electron source is the cheapest and stable electron source but it has the lowest brightness. Schottky emitter is 10000 times brighter than tungsten thermal electron source, but requires ultrahigh vacuum operating condition. Cold field electron emitter is 10 times brighter than Schottky emitters, but it is rather unstable and its operation requires most stringent vacuum condition, hindering its widespread use.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.937-939
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• 2007

Carbon nanotubes (CNTs) have used as an electron field emitter of the field emission display (FED) due to their characteristics of high-electron emission, rapid response and low power consumption. However, to commercialize the FED with CNT emitter, some fundamental problems regarding life time and emission efficiency have to be solved. In this study, we investigated the $TiO_2$ coated CNT as a field emitter. $TiO_2$ nanoparticles can coated on CNT surface by chemical solution method. $TiO_2$ nanoparticles had uniform size with the average size of about 2.4 nm to 3.1 nm. Field emission performance of CNT coated with $TiO_2$ nanoparticles was evaluated and discussed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 춘계학술대회 논문집
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• pp.124-128
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• 1995

We have fabricated the vacuum magnetic device with a lateral field emitter arrays constructed on n-Si wafer, and investigated its magnetic characteristics. The device is consited to tip-arrayed emitter. gate and split-anode, The fabricated vacuum magnetic device has showed a good linearity of magnetic field and a high sensitivity compared with the conventional semiconductor magnetic device.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 추계종합학술대회 논문집(2)
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• pp.33-36
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• 2000

Active-controlled field emitter arrays (ACFEAs) are developed by monolithically integrating molybdenum field emitter arrays with amorphous silicon thin film transistors (a-Si：H TFTs) on glass substrate. Transfer and output characteristics of the fabricated ACFEAs showed that the emission currents of FEAs can be accurately controlled by the gate bias voltages of TFTs. Also, the emission currents of the ACFEAs kept stable without any fluctuations during the 30 min-operation.

• 한국추진공학회:학술대회논문집
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• 한국추진공학회 2004년도 제22회 춘계학술대회논문집
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• pp.300-305
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• 2004

A preliminary study on. field emitter array cathodes was conducted aiming at applying for electrodymanic tether (EDT) propulsion systems. The EDT propulsion systems are assumed to use for active removal systems of post-mission spacecraft, which would otherwise become space debris. A survey on field emit-ter array cathode technology was conducted, and it showed that carbon nanotube (CNT) emitters are suit-able to EDT application. Trial fabrications and evaluation tests of CNT emitters were conducted, which demonstrated a target emission current density of 10 ㎃/$\textrm{cm}^2$. It was found out that the most important technical issue for developing CNT emitters is to improve the performance against voltage breakdown between the emitter and the opposite electrode.

• JSTS:Journal of Semiconductor Technology and Science
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• 제2권2호
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• pp.93-101
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• 2002

We have proposed and fabricated two lateral type field emission diodes, poly-Si emitter by utilizing the local oxidation of silicon (LOCOS) and GaN emitter using metal organic chemical vapor deposition (MOCVD) process. The fabricated poly-Si diode exhibited excellent electrical characteristics such as a very low turn-on voltage of 2 V and a high emission current of $300{\;}\bu\textrm{A}/tip$ at the anode-to-cathode voltage of 25 V. These superior field emission characteristics was speculated as a result of strong surface modification inducing a quasi-negative electron affinity and the increase of emitting sites due to local sharp protrusions by an appropriate activation treatment. In respect, two kinds of procedures were proposed for the fabrication of the lateral type GaN emitter: a selective etching method with electron cyclotron resonance-reactive ion etching (ECR-RIE) or a simple selective growth by utilizing $Si_3N_4$ film as a masking layer. The fabricated device using the ECR-RIE exhibited electrical characteristics such as a turn-on voltage of 35 V for $7\bu\textrm{m}$ gap and an emission current of~580 nA/l0tips at anode-to-cathode voltage of 100 V. These new field emission characteristics of GaN tips are believed to be due to a low electron affinity as well as the shorter inter-electrode distance. Compared to lateral type GaN field emission diode using ECR-RIE, re-grown GaN emitters shows sharper shape tips and shorter inter-electrode distance.

• 한국광학회지
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• 제13권4호
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• pp.314-318
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• 2002

저전압(~1 ㎸)에서 구동되어 수 ㎁의 전류를 얻을 수 있는 초소형 전자 칼럼(microcolumn) 설계를 위한 프로브(probe) 빔의 직경이 최소가 되는 전자 광학계의 조건을 조사하였다. 프로브 빔의 최소 직경은 전자 방출원의 특성에 의존하는데, 동일 조건의 광학계에 대하여 thermal field emitter(TFE)인 경우 ~20 ㎚인 반면 cold field emitter(CFE)인 경우 ~10 ㎚인 것으로 조사되었다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권1호
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• pp.59-63
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• 2000

For the Mo-tip field emitter array, the method by which the geometrical structure of the gate insulator wall could be modified in order to improve field emission properties(turn-on voltage and gate leakage current). The device having a gate insulator of complex shape, which means the combined geometrical structure with round shape made by wet etching and vertical shape made by dry etching processes, was fabricated and the field emission properties of the three kinds of devices were compared. As a result, the electric field applied to tip apex could be increased and gate leakage current could be decreased by employing the gate insulator having geometrical wall structure of mixed shape. Finally, the obtained empirical results were analyzed by simulation of electric field distribution at/near the tip apex and gate insulator using SNU-FEAT simulator.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.347-350
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• 2001

A typical Mold method is to form a gate electrode, a gate oxide, and emitter tip after fabrication of mold shape using wet-etching of Si substrate. In this study, however, new Mold method using a side wall space structure is used in order to make sharper emitter tip with a gate electrode. Using LPCVD(low pressure chemical vapor deposition), a gate oxide and electrode layer are formed on a Si substrate, and then BPSG(Boro phospher silicate glass) thin film is deposited. After, the BPSG thin film is flowed into a mold as high temperature in order to form a sharp mold structure. Next TiN thin film is deposited as a emitter tip substance. The unfinished device with a glass substrate is bonded by anodic bonding techniques to transfer the emitters to a glass substrate, and Si substrate is etched using KOH-deionized water solution. Finally, we made sharp field emitter array with gate electrode on the glass substrate.