• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.466-466
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• 2011

There have been several methods to fabricate carbon nanotube (CNT) emitters, which include as-grown, spraying, screen-printing, electrophoresis and bonding methods. Unfortunately, these techniques generally suffer from two main problems. One is a weak mechanical adhesion between CNTs and the cathode. The as-grown, spraying and electrophoresis methods show a weak mechanical adhesion between CNTs and the cathodes, which induces CNT emitters pulled out under a high electric field. The other is a severe degradation of the CNT tip due to organic binders used in the fabrication process. The screen-printing method which is widely used to fabricate CNT emitters generally shows a critical degradation of CNT emitters caused by the organic binder. Such kinds of problems induce a short lifetime of the CNT field emitters which may limit their practical applications. Therefore, a robust CNT emitter which has the strong mechanical adhesion and no degradation is still a great challenge. Here, we introduce a simple and effective technique for fabrication of CNT field emitter, namely filtration-taping-transfer method. The CNT emitters fabricated by the filtration-taping-transfer method show the low turn-on electric fields, the high emission current, good uniformity and good stability. The enhanced emission performance of the CNT emitters is mainly attributed to high emission sites on the emitter area, and to good ohmic contact and strong mechanical adhesion between the emitters and cathodes. The CNT emitters using a simple and effective fabrication method can be applied for various field emission applications such as field emission displays, lamps, e-beam sources, and x-ray sources. The detail fabrication process will be covered at the poster.

• Transactions on Electrical and Electronic Materials
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• v.14 no.1
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• pp.28-31
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• 2013

A volcano shaped gated Si-FEA (silicon field emitter array) was simply fabricated using sputtering as a gate electrode deposition and lift-off for the removal of the oxide mask, respectively. Due to the limited step coverage of well-controlled sputtering and the high aspect ratio in Si dry etch caused by high RF power, it was possible to obtain Si FEAs with a stable volcano shaped gate structure and to realize the restriction of gate leakage current in field emission characteristics. For 100 tip arrays and 625 tip arrays, gate leakage currents were restricted to less than 1% of the anode current in spite of the volcano-shaped gate structure. It was also possible to keep the emitters stable without any failure between the Si cathode and gate electrode in field emission for a long time.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.40 no.11
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• pp.1004-1009
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• 2012

Carbon nanotube are nanostructure with extraordinary field emission properties like high current density, low driving voltage and long time stability, because of their high electrical conductivity, high aspect ratio for geometrical field enhancement and superior thermal stability. But, there is some problem to mate metal and carbon nanotube, we have resolved this problem by using interfacial graphene. This approach takes advantage of superior electric and thermal conductivity between metal and carbon nanotube and shows superior performance compared to the existing field emitters. This result shows that such a carbon nanotube emitter in a stage where it can be used for Field Emission Electric Propulsion (FEEP).

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.154-154
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• 2000

FED(Field emission display)의 FEAs(Field emitter arrays)에 형성되어 있는 micro-tip 은 tip 표면의 오염이나 진공내부의 잔류가스에 대단히 민감하다. 특히, emitter 물질의 일함수 및 겉모양 같은 기하학적 요소에 민감한 전계방출 소자의 특성상 tip 선단이 oxidation 될 경우 일함수가 증가하여 전자방출에 필요한 구동전압이 증가하고 전자 방출의 불균일성이 커지는 문제점이 발생한다. 이에 고진공의 동작 환경 및 FEAs 제작과정이나 공기의 노출에 발생하는 tip 표면의 오염물질 제거가 요구된다. 따라서 본 연구에서는 40$\times$40mm2 FEAs에 laser power, scan speed을 달리하며 laser(cw Nd-YAG, 1064nm)을 조사하였다. laser cleaning 효과를 보기 위해 laser irradiation 전, 후에 진공도 5$\times$10-7torr irradiation 후에 emitter tip의 뚜렷한 기하학적 모양의 변화를 볼 수는 없었지만, I-V 특성이 향상 되는 것을 볼 수 있었다.

• Journal of Information Display
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• v.2 no.3
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• pp.66-71
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• 2001

MCFEDs (MOSFET-Contoolled Field Emission Displays) were fabricated to evaluate the validity of MCFEA for display application. The electrical properties of FEAs (Field Emitter Arrays), HVMOSFETs (High-Voltage MOSFETs), and MCFEAs (MOSFET-Controlled Field Emitter Arrays) were measured. The extraction gate voltage of the FEAs to obtain the anode current of 10 nA/tip was around 71 V. The breakdown voltages of the HVMOSFETs were above 81 V for all the samples. The I-V characteristics of the MCFEAs showed that the emission currents of the FEAs were well controlled depending on the control gate voltages of the HVMOSFETs. To avoid the harmful effects during the packaging process, the performance of the MCFEDs was evaluated in a high vacuum chamber. The emission images of the MCFEDs were controlled through very-through operation. From the comparison with a conventional FED, it was proven that the poor uniformity of FED could be improved through the integration with HVMOSFET.

• Journal of Information Display
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• v.1 no.1
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• pp.63-69
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• 2000

In order to improve both the level and the stability of electron emission, Mo and Co silicides were formed from Mo mono-layer and Ti/Co bi-layers on single crystal silicon field emitter arrays (FEAs), respectively. Using the slope of Fowler-Nordheim curve and tip radius measured from scanning electron microscopy (SEM), the effective work function of Mo and Co silicide FEAs were calculated to be 3.13 eV and 2.56 eV, respectively. Compared with silicon field emitters, Mo and Co silicide exhibited 10 and 34 times higher maximum emission current, 10 V and 46 V higher device failure voltage, and 6.1 and 4.8 times lower current fluctuation, respectively. Moreover, the emission currents of the silicide FEAs depending on vacuum level were almost the same in the range of $10^{-9}{\sim}10^{-6}$ torr. This result shows that silicide is robust in terms of anode current degradation due to the absorption of air molecules.

• Journal of the Semiconductor & Display Technology
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• v.10 no.2
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• pp.115-119
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• 2011

A tip-type carbon nanotube(CNT)-based field emitter was studied to consider it as electron source for micro-focused x-ray tube. The CNT was grown directly on a metal (tungsten) substrate by using an inductively coupled plasma-chemical vapor deposition (ICP-CVD) method. Prior to CNT growth, the metal substrate was etched to have various tip angles from $10^{\circ}$ to $180^{\circ}C$ (flat-type). The morphologies and microstructures of all the grown CNTs were analyzed via field-emission SEM. Furthermore, the effects of substrate tip-angles on the emission properties of CNT-based field emitters were characterized to estimate the maximum current density, the turn-on voltage, and the spatial distribution of electron beams. Prolonged long-term stability testing of the CNT emitters was also performed. All the experiment results obtained from this study indicated why a tip-type CNT emitter, compared with a flat-type CNT emitter, would be more desirable for a micro-focused x-ray system, in terms of the emission current level, the focused beam area, and the emission stability.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.60-63
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• 2004

Recently, carbon nanotubes(CNTs) have been demonstrated to possess remarkable mechanical and electronic properties, in particular, for field emission applications. Its high aspect ratio and extremely small diameter, hollowness, together with high mechanical strength and high chemical stability, are advantages for use in field emitter. In this paper, we demonstrate electrical discharge properties from carbon nanotube cathode electrodes to use as an emitter electrode of vacuum gauges. Vertically aligned $2{\times}2mm^2$ CNT arrays on the silicon substrate were synthesized by the thermal CVD method on Fe catalytic metal, and a glass patterning by the sand blast method and the silicon/glass anodic bonding processes were applied to make samples with 2 electrodes. The field emission was examined under the vacuum range of $10^{-3}$ Torr.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.4
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• pp.275-280
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• 1999

The glass-to-glass electrostatic bonding process in vacuum environment was developed and the tubeless-packaged FED was fabricated based on the bonding process. The fabricated tubeless-packaged FED showed stable field emission characteristics and potential applicability to the FED tubeless packaging and vacuum in-line sealing.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2004.03a
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• pp.300-305
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• 2004

A preliminary study on. field emitter array cathodes was conducted aiming at applying for electrodymanic tether (EDT) propulsion systems. The EDT propulsion systems are assumed to use for active removal systems of post-mission spacecraft, which would otherwise become space debris. A survey on field emit-ter array cathode technology was conducted, and it showed that carbon nanotube (CNT) emitters are suit-able to EDT application. Trial fabrications and evaluation tests of CNT emitters were conducted, which demonstrated a target emission current density of 10 ㎃/$\textrm{cm}^2$. It was found out that the most important technical issue for developing CNT emitters is to improve the performance against voltage breakdown between the emitter and the opposite electrode.