Journal of Information Display

The Korean Infomation Display Society (한국정보디스플레이학회)
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Emission Characteristics of 0.7' Monochrome MOSFET-Controlled Field Emission Display in a High Vacuum Chamber

  • Lee, Jong-Duk (Inter-University semiconductor Research Center (ISRC) and School of Electrical Eng.(SOEE), Seoul National University) ;
  • Oh, Chang-Woo (Inter-University semiconductor Research Center (ISRC) and School of Electrical Eng.(SOEE), Seoul National University) ;
  • Kim, Il-Hwan (Samsung SDI co., ltd) ;
  • Park, Jae-Woo (Inter-University semiconductor Research Center (ISRC) and School of Electrical Eng.(SOEE), Seoul National University) ;
  • Park, Byung-Gook (Inter-University semiconductor Research Center (ISRC) and School of Electrical Eng.(SOEE), Seoul National University)
  • Published : 2001.09.30
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Abstract

MCFEDs (MOSFET-Contoolled Field Emission Displays) were fabricated to evaluate the validity of MCFEA for display application. The electrical properties of FEAs (Field Emitter Arrays), HVMOSFETs (High-Voltage MOSFETs), and MCFEAs (MOSFET-Controlled Field Emitter Arrays) were measured. The extraction gate voltage of the FEAs to obtain the anode current of 10 nA/tip was around 71 V. The breakdown voltages of the HVMOSFETs were above 81 V for all the samples. The I-V characteristics of the MCFEAs showed that the emission currents of the FEAs were well controlled depending on the control gate voltages of the HVMOSFETs. To avoid the harmful effects during the packaging process, the performance of the MCFEDs was evaluated in a high vacuum chamber. The emission images of the MCFEDs were controlled through very-through operation. From the comparison with a conventional FED, it was proven that the poor uniformity of FED could be improved through the integration with HVMOSFET.

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