• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.4
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• pp.272-277
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• 2011

The ambipolar behavior of tunneling field-effect transistors (TFETs) has been investigated quantitatively by introducing a novel parameter: ambipolarity factor (${\nu}$). It has been found that the malfunction of TFET can result from the ambipolar state which is not on- or off- state. Therefore, the effect of ambipolar behavior on the device performance should be parameterized quantitatively, and this has been successfully evaluated as a function of device structure, gate oxide thickness, supply voltage, drain doping concentration and body doping concentration by using ${\nu}$.

• Journal of Magnetics
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• v.7 no.1
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• pp.4-8
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• 2002

The magnetoresistance (MR) and the magnetization reversal of a lateral spin-injection device based on a spin-polarized field effect transistor (spin FET) have been investigated. The device consists of a two-dimensional electron gas (2DEG) system in an InAs single quantum well (SQW) and two ferromagnetic $(Ni_{80}Fe_{20})$ contacts: all injector (source) and a detector (drain). Spin-polarized electrons are injected from the first contact and, after propagating through the InAs SQW are collected by the second contact. By engineering the shape of the permalloy contacts, we were able to observe distinct switching fields $(H_c)$ from the injector and the collector by using scanning Kerr microscopy and MR measurements. Magneto-optic Kerr effect (MOKE) hysteresis loops demonstrate that there is a range of magnetic field (20~60 Oe), at room temperature, over which the magnetization in one contact is aligned antiparallel to that in the other. The MOKE results are consistent with the variation of the magnetoresistance in the spin-injection device.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.2
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• pp.159-165
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• 2016

Recently, active efforts are being made for future Si CMOS technology by various researches on emerging devices and materials. Capability of low power consumption becomes increasingly important criterion for advanced logic devices in extending the Si CMOS. In this work, a junctionless field-effect transistor (JLFET) with ultra-thin poly-Si (UTP) channel is designed aiming the sub-10-nm technology for low-power (LP) applications. A comparative study by device simulations has been performed for the devices with crystalline and polycrystalline Si channels, respectively, in order to demonstrate that the difference in their performances becomes smaller and eventually disappears as the 10-nm regime is reached. The UTP JLFET would be one of the strongest candidates for advanced logic technology, with various virtues of high-speed operation, low power consumption, and low-thermal-budget process integration.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.2
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• pp.216-222
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• 2017

The most prominent challenge for MOSFET scaling is to reduce power consumption; however, the supply voltage ($V_{DD}$) cannot be scaled down because of the carrier injection mechanism. To overcome this limit, a new type of field-effect transistor using positive feedback as a carrier injection mechanism (FBFET) has been proposed. In this study we have investigated the electrical characteristics of a $Si_{1-x}Ge_x$ FBFET with one gate and one-sided $Si_3N_4$ spacer using TCAD simulations. To reduce the drain bias dependency, $Si_{1-x}Ge_x$ was introduced as a low-bandgap material, and the minimum subthreshold swing was obtained as 2.87 mV/dec. This result suggests that a $Si_{1-x}Ge_x$ FBFET is a promising candidate for future low-power devices.

• Applied Chemistry for Engineering
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• v.26 no.1
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• pp.116-119
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• 2015

Field-effect transistor (FET)-based ion or biosensors have been intensively studied so far. Among many measurement methods, the variation of the drain current can be induced when ions or biomolecules are interacted with sensing membranes located on the gate insulator of FET. One of typical FET-type sensors is an ion-sensitive field-effect transistor (ISFET) utilized in this study. In ISFET, the voltage is usually applied to the reference electrode instead of the gate voltage. Firstly, the voltage applied to the reference electrode versus the drain current was observed, and the steepest slope in this graph was found. Using this point, the optimized condition was established for the larger variation of the drain current in the saturated region in response to the variation of the input in the dynamic range.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.66 no.10
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• pp.1494-1498
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• 2017

In this study, we investigate the influence of an overlap between the gate and source/drain regions of silicon nanowire (SiNW) CMOS (complementary metal-oxide-semiconductor) inverter on bendable plastic substrates and describe their electrical characteristics. The combination of n-channel silicon nanowire field-effect transistor (n-SiNWFET) and p-channel silicon nanowire field-effect transistor (p-SiNWFET) operates as an inverter logic gate. The gains with a drain voltage ($V_{dd}$) of 1 V are 3.07 and 1.21 for overlapped device and non-overlapped device, respectively. The superior electrical characteristics of each of the SiNW transistors including steep subthreshold slopes and the high $I_{on}/I_{off}$ ratios are major factors that enable the excellent operation of the logic gate.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.653-653
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• 2013

In this study, ITO extended gate reduced graphene oxide field effect transistor (rGO FET) was demonstrated as a transducer for a proton sensing application. In this structure, the sensing area is isolated from the active area of the device. Therefore, it is easy to deposit or modify the sensing area without affecting on the device performance. In this case, the ITO extended gate was used as a gate electrode as well as a proton sensing material. The proton sensing properties based on the rGO FET transducer were analyzed. The rGO FET device showed a high stability in the air ambient with a TTC encapsulation layer for months. The device showed an ambipolar characteristic with the Dirac point shift with varying the pH solutions. The sensing characteristics have offered the potential for the ion sensing application.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.5
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• pp.554-562
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• 2015

This paper presents the design and analysis of gate-recessed AlGaN/GaN Fin-type Field-Effect Transistor (FinFET). The three-dimensional (3-D) technology computer-aided design (TCAD) simulations were performed to analyze the direct-current (DC) and radio-frequency (RF) characteristics for AlGaN/GaN FinFETs. The fin width ($W_{fin}$) and the height of GaN layer ($H_{GaN}$) are the design parameters used to improve the electrical performances of gate-recessed AlGaN/GaN FinFET.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.3
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• pp.213-225
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• 2002

Metal-Ferroelectric- Insulator- Silicon (MFIS) structured field effect transistor (FET) device was fabricated and characterized. Important issues to realize ferroelectric gate field effect transistor device were summarized in three sections. The choice of interlayer dielectric was made in the consideration of device functionality and chemical reaction between ferroelectric materials and silicon surface during fabrication process. Also, various ferroelectric thin film materials were taken into account to meet desired memory window and process compatibility. Finally, MFIS structured FET device was fabricated and important characteristics were discussed. For feasible integration of current device as random access memory array cell address schemes were also suggested.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.839-846
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• 1996

Epitaxial (La, Sr)$CoO_3/Pb(Zr,\;Ti)O_3/(La,\;Sr)CoO_3$by pulsed laser deposition for ferroelectric field effect transistor. Epitaxial $LaCoO_3/Pb(Zr,\;Ti)O_3/(La,\;Sr)CoO_3$ heterostructures exhibited 70$\mu C/cm^2$ and 17 $\mu C/cm^2$at a positively and negatively poled states, respectively. On the other hand, epitaxial (La, Sr)$CoO_3/Pb(Zr,\;Ti)O_3/LaCoO_3$heterostructures show the remnant polarization states opposite to the $LaCoO_3/Pb(Zr,\;Ti)O_3/(La,\;Sr)CoO_3$ heterostructures. This indicates that the interface between (La, Sr)$CoO_3$ (LSCO) and $Pb(Zr, Ti)O_3(PZT)$ layers affects the asymmetric polarization remanence through electrochemical nature. The resistivity of $LaCoO_3$ (LCO) layer was found to be dependent on an ambient oxygen, primarily the ambient oxygen pressure during deposition. The resistivity of the LCO layer varied in the range of 0.1-100 $\Omega$cm. It is suggested that, with an appropriate resistivity of the LCO layer, the LCO/PZT/LSCO heterostructure can be used as the ferroelectric field effect transistor.