• Proceedings of the KIEE Conference
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• 1989.11a
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• pp.149-150
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• 1989

Diamond thin films were synthesised from the mixed gases of $CH_4$ and $H_2$ on silicon substrate by R.F plasma CVD and films deposited were investigated by SEM. XRD and Raman spectroscope. From these result, cubo-octahedral diamond particles were synthesised under the following condition: methane concentration. 1.0vol% ; pressure of reactor, 0.3torr ; R.F power, 500W ; reaction time, 20hr.

• Proceedings of the KIPE Conference
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• 2014.07a
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• pp.95-96
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• 2014

450mm 반도체 CVD 장비 개발 및 300mm F-CVD (Flowable CVD) 공정 개발에 있어서 공정 마진 확보 및 막질 품질 개선을 위해 주파수 가변형 RF Generator가 필수적으로 요구되고 있다. 20nm이하 STI (Shallow Trench Isolation), PMD (Pre-metal Dielectric) & IMD (Inter-Metal Dielectric) 미세공정 gap fill에 많은 문제점이 도출되고 있으며, 이유로는 Generator 고정 주파수에서 Matching Time delay 또는 Shooting에 의한 산포의 한계로 파악되었으며, 주파수 가변에 의한 고속 Tune 기능이 요구되어진다. 따라서 400kHz 주파수 가변형 RF-Generator 개발을 진행하였으며 본 논문을 통해 개발되어진 장비의 성능과 시험 평가한 결과를 소개하고자 한다.

• Transactions on Electrical and Electronic Materials
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• v.4 no.5
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• pp.33-37
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• 2003

This study was performed to investigate the deposition mechanism of SiO$_2$ by ArF excimer laser(l93nm) CVD with Si$_2$H$\_$6/ and N$_2$O gas mixture and evaluate laser CVD quantitatively by modeling. With ArF excimer laser CVD, thin films can be deposited at low temperature(below 300$^{\circ}C$), with less damage and good uniformity owing to generation of conformal reaction species by singular wavelength of the laser beam. In this study, new model of SiO$_2$ deposition process by laser CVD was introduced and deposition rate was simulated by computer with the basis on this modeling. And simulation results were compared with experimental results measured at various conditions such as reaction gas ratio, chamber pressure, substrate temperature and laser beam intensity.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.1
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• pp.45-51
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• 2004

We have proposed a new shallow trench isolation (STI) process using flowable oxide (F-oxide) chemical vapor deposition (CVD) for DRAM application and it was successfully developed. The combination of F-oxide CVD and HDP CVD is thought to be the superior STI gap-filling process for next generation DRAM fabrication because F-oxide not only improves STI gap-filling capability, but also the reduced local stress by F-oxide in narrow trenches leads to decrease in junction leakage and gate induced drain leakage (GIDL) current. Finally, this process increased data retention time of DRAM compared to HDP STI. However, a serious failure occurred by symphonizing its structural dependency of deposited thickness with poor resistance against HF chemicals. It could be suppressed by reducing the flow time during F-oxide deposition. It was investigated collectively in terms of device yield. In conclusion, the combination of F-oxide and HDP oxide is the very promising technology for STI gap filling process of sub-100nm DRAM technology.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.66-69
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• 2002

This paper presents deposition and characterizations of microcrystalline silicon$({\mu}c-Si:H)$ films prepared by hot wire chemical vapor deposition at substrate temperature below $300^{\circ}C$. The $SiH_{4}$ concentration$[F(SiH_{4})/F(SiH_{4})+F(H_{2})]$ is critical parameter for the formation of Si films with microcrystalline phase. At 6% of silane concentration, deposited intrinsic ${\mu}c-Si:H$ films shows sufficiently low dark conductivity and high photo sensitivity for solar cell applications. P-type ${\mu}c-Si:H$ films deposited by Hot-Wire CVD also shows good electrical properties by varying the rate of $B_{2}H_{6}$ to $SiH_{4}$ gas. The solar cells with structure of Al/nip ${\mu}c-Si:H$/TCO/glass was fabricated with single chamber Hot-Wire CVD. About 3% solar efficiency was obtained and applicability of HWCVD for thin film solar cells was proven in this research.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.386-388
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• 1996

Low dielectric constant fluorinated oxide (SiOF) films were deposited using SiF$_4$/O$_2$/SiH$_4$mixtures by electron cyclotron resonance chemical vapor deposition (ECR CVD). Chemical composition of SiOF films was investigated by Fourier transform infrared spectroscopy (FT-lR). The fluorine content in the SiOF film observed by X-ray photoelectron spectroscopy (XPS). The dielectric constant decreased with increasing of the SiF$_4$ flow rate about 8sccm. The SiOF film, deposited with SiF$_4$=8 sccm, exhibited a F content of 5 atomic % and a relative dielectric constant 3.45. For evaluating SiOF films stability, humidity tests were performed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1034-1037
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• 2003

Microcrystalline silicon(c-Si:H) thin-film solar cells are prepared with intrinsic Si-layer by hot wire CVD. The operating parameters of solar cells are strongly affected by the filament temperature ($T_f$) during intrinsic layer. Jsc and efficiency abruptly decreases with elevated $T_f$ to $1400^{\circ}C$. This deterioration of solar cell parameters are resulted from increase of crystalline volume fraction and corresponding defect density at high $T_f$. The heater temperature ($T_h$) are also critical parameter that controls device operations. Solar cells prepared at low $T_h$ ($<200^{\circ}C$) shows a similar operating properties with devices prepared at high $T_f$, i.e. low Jsc, Voc and efficiency. The origins for this result, however, are different with that of inferior device performances at high $T_f$. In addition the phase transition of the silicon films occurs at different silane concentration (SC) by varying filament temperature, by which highest efficiency with SC varies with $T_f$.

• Korean Journal of Materials Research
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• v.26 no.9
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• pp.455-459
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• 2016

The deposition process for the gap-filling of sub-micrometer trenches using DMDMOS, $(CH_3)_2Si(OCH_3)_2$, and $C_xH_yO_z$ by flowable chemical vapor deposition (F-CVD) is presented. We obtained low-k films that possess superior gap-filling properties on trench patterns without voids or delamination. The newly developed technique for the gap-filling of submicrometer features will have a great impact on IMD and STI for the next generation of microelectronic devices. Moreover, this bottom up gap-fill mode is expected to be universal in other chemical vapor deposition systems.

• Korean Journal of Materials Research
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• v.7 no.10
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• pp.851-855
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• 1997

본 실험에서는 저유전율 층간절연물질로서 SiOF박막을 ECR plasma CVD를 이용하여 증착하였다. 또한 증착시에 발생시킨 플라즈마의 특성 분석을 위하여 Langmuir probe를 반응챔버에 부착하여 플라즈마 밀도, 마이크로파 전력은 700W, 기판온도는 30$0^{\circ}C$에서 행하였다. 증착된 SiOF 박막을 분석한 결과, 가스유량비(SiF$_{4}$/O$_{2}$)가 0.2에서 1.6으로 증가하였을 때 불소의 함량은 약 5.3at%에서 14.5at%로 증가하였으며, 굴절률은 1.501에서 1.391로 감소하였고 이는 불소 첨가에 의한 박막의 밀도감소에 의한 것으로 생각된다. 또한 박막의 유전상수는 가스유량비가 1.0(11.8qt.% F함유)일 때 3.14였다.

• Journal of the Korean Vacuum Society
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• v.4 no.S1
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• pp.40-68
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• 1995

As silicon divice geometrics become smaller and aspect ratios larger, processing technoloty is moving from PVD into the area of CVD and OMCVD. Many new source materials are in the research and development stage, and have placed challenging demands on materials delivery technology. This paper will describe the many successes achieved with various delivery methods including thermal, bubblers, pressure-based and Direct Liquid Injection.