Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 1996.11a
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- Pages.386-388
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- 1996
Propcrties of Low Delectric Constant SiOF Films Formed by ECR CVD
ECR CVD 방법에 의해 증착된 저유전율 SiOF 박막특성
Abstract
Low dielectric constant fluorinated oxide (SiOF) films were deposited using SiF
Keywords