• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2002년도 ICCAS
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• pp.80.1-80
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• 2002

In this article, an alternative analog multiplier circuit, using the translinear second-generation current conveyors with the external resistors. The realization method makes use of the inherited translinear loop of the current conveyor offering the positive-supply current that provides in the quartersquare algebraic identity. The proposed circuit operates in voltage mode and it achieves a high accuracy. The PSPICE simulation results confirm that the performances of the proposed multiplier circuit, such as dynamic range and accuracy, are agreed with the theoretical results.

• 대한전자공학회논문지
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• 제23권3호
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• pp.384-388
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• 1986

This paper describes the design and fabrication of an integrated circuit that can detect the teletext signal included in a composite video signal. The circuit that is based on the comparatorlevel sampling method can detect a stable data signal even from an external circuit with large variation. It has been fabricated by the SST bipolar standard process. Its chip size is $2.5x3.78mm^2$.

• 대한전자공학회논문지
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• 제24권6호
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• pp.992-997
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• 1987

This paper describes the design and fabrication of an integrated circuit that can separate the horizontal SYNC., vertical SYNC. and composite SYNC. signal included in a composite video signal. The circuit that is based on the comparator level samplign method can separate a stable SYNC. signal even from an external circuit with large variation. It has been fabrivated by the SST bipolar process. Its chip size is 1.5x1.5mm\ulcorner As a result, we succeeded in fabrication of IC which satisfied DC characteristics and SYNC. singal separator function.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2003년도 추계학술대회 논문집
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• pp.103-105
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• 2003

The high speed of RSFQ circuits is based on the self-resetting in the overdamped Josephson junctions. The SIS technology using Nb/A1$_2$O$_3$/Nb trilayer has been successfully adopted as a standard technology. However the newly suggested SINIS technology attracts interest because the junction itself is overdamped without any external shunt, and provides possibility of simplification of RSFQ circuit design and fabrication. In this paper we demonstrate RSFQ circuit fabrication process using SINIS technology.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 ITC-CSCC -1
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• pp.658-661
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• 2002

An analog multiplier-divider circuit that realized through the use of OTAs, which does not require external passive circuit elements and temperature compensated, is proposed in this paper. Since the scheme is realized in such a way that employs only OTA as a standard cell, the circuit is simple and can be easily constructed from commercially available IC. The circuit bandwidth is wide and close to the transistor f$\sub$T/. Simulation results that demonstrate the performances of the multiplier-divider circuit are included.

• 전자공학회논문지C
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• 제34C권8호
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• pp.49-63
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• 1997

This paper presents a current sensor that detects defects in CMOS integrated circuits using the current testing technique. The current sensor is built in a CMOS integrated circuit to test an abnormal current. The proposed circuit has a very small impact on the performance of the circuit under test during the normal mode. In the testing mode, the proposed circuit detects the abnormal current caused by permanent manufacturing defects and determines whether the circuit under test is defect-free or not. The proposed current sensor is simple and requires no external voltage and current sources. Hence, the circuit has less area and performance degradation, and is more efficient than any previous works. The validity and effectiveness are verified through the HSPICE simulation on circuits with defects.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2000년도 제15차 학술회의논문집
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• pp.512-512
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• 2000

In this article, a current mode peak detector circuit is presented. The simple circuit configuration comprises four MOS transistors and one external capacitor. The realization method is suitable fur fabrication using CMOS technology and all transistors are operated in their saturation region. The proposed circuit exhibits a very low drop rate and provides high accuracy, high-speed and wide dynamic range. The proposed circuit has very low power dissipation and operates using a single 2.5V supply. Simulation results confirmed the characteristic of the proposed circuit are also included.

• 한국안전학회지
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• 제37권6호
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• pp.1-8
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• 2022

This study analyzed the characteristics of insulation resistance and operating time based on an accelerated degradation test of a low-voltage circuit breaker. The experimental sample used a molded case circuit breaker (MCCB) and an earth leakage circuit breaker (ELCB). After measuring the insulation resistance of the circuit breakers, the leakage current was affected by an external rather than an internal structure. Furthermore, the insulation resistance of the circuit breakers with accelerated degradation was measured using a Megger insulation tester. In the accelerated degradation test, aging times of five, ten, 15, and 20 years were applied according to a temperature derived using the Arrhenius equation. Circuit breakers with an equivalent life of ten, 15, and 20 years had increased insulation resistance compared to those with less degradation time. In particular, the circuit breaker with an equivalent life of ten years had the highest insulation resistance. Component analysis of the circuit breaker manufactured through an accelerated degradation test confirmed that the timing of the increase in insulation resistance and the time of additive loss were the same. Finally, after analyzing the operating time of the circuit breakers with degradation, it was confirmed that the MCCB did not change, but the ELCB breaker failed.

• ETRI Journal
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• 제30권5호
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• pp.644-652
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• 2008

In this paper, a low-power CMOS interface circuit is designed and demonstrated for capacitive sensor applications, which is implemented using a standard 0.35-${\mu}m$ CMOS logic technology. To achieve low-power performance, the low-voltage capacitance-to-pulse-width converter based on a self-reset operation at a supply voltage of 1.5 V is designed and incorporated into a new interface circuit. Moreover, the external pulse signal for the reset operation is made unnecessary by the employment of the self-reset operation. At a low supply voltage of 1.5 V, the new circuit requires a total power consumption of 0.47 mW with ultra-low power dissipation of 157 ${\mu}W$ of the interface-circuit core. These results demonstrate that the new interface circuit with self-reset operation successfully reduces power consumption. In addition, a prototype wireless sensor-module with the proposed circuit is successfully implemented for practical applications. Consequently, the new CMOS interface circuit can be used for the sensor applications in ubiquitous sensor networks, where low-power performance is essential.

• 한국정보통신학회논문지
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• 제14권1호
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• pp.183-190
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• 2010

본 논문에서는 외부 프로그램 전압으로 프로그램 가능한 로직 공정 기반의 eFuse OTP 셀을 제안하였다. 기존의 eFuse OTP 메모리 셀은 eFuse의 양극 (anode)에 연결된 SL (Source Line)으로 SL 구동회로의 전압강하를 거치면서 프로그램 데이터가 공급된 반면, 새롭게 제안된 eFuse 셀은 NMOS 프로그램 트랜지스터의 게이트에 프로그램 데이터가 공급되고 eFuse의 양극에 3.8V의 외부 프로그램 전압 (FSOURCE)이 전압강하 없이 공급된다. 그리고 제안된 셀의 FSOURCE 전압은 읽기 모드에서 0V 또는 플로팅 상태를 유지한다. 한편 본 논문에서는 FSOURCE 핀의 전압이 플로팅 상태인 경우는 회로적으로 0V로 바이어싱 하는 클램프 회로를 제안하였고, 로직 전압인 VDD (=1.8V)와 FSOURCE전압 사이에 스위칭 해주는 VPP 스위칭 회로를 제안하였다. 동부하이텍 $0.15{\mu}m$ generic 공정으로 설계된 8비트 eFuse OTP IP의 레이아웃 면적은 $359.92{\times}90.98{\mu}m^2$이다.