• Journal of the Korean Vacuum Society
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• v.7 no.4
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• pp.348-354
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• 1998

To investigate an influence of the thermal preheating for the substrates exerted on the heteroepilayers, the ZnTe epilayers are grown on the GaAs (100) at the substrate temperature of 450~$630^{\circ}C$ by hot wall epitaxy (HWE). For this purpose, double crystal rocking curve (DCRC) and photoluminescence (PL) are measured. The full width at half maximum of DCRC are the smallest in the ZnTe epilayers grown on the GaAs thermally etched at around both $510^{\circ}C$ and $590^{\circ}C$. However, at around $550^{\circ}C$ they increase due to the reconstruction of the atoms in the surface. And they increase due to the oxide layer at below $490^{\circ}C$ and due to the surface defects at above $610^{\circ}C$. From PL analysis, the full width at half maximum of the light hole exciton $X_{1s,th}$ and of the second-order Raman line increase at around $550^{\circ}C$. With the increasing preheating temperature, the intensities of Y-bands and of the oxygen bound exciton (OBE) peak related to an oxide layer on the GaAs surface generally decrease. From these experimental results, it's confirmed that the GaAs substrate thermally etched influences the ZnTe pilayers.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.81-81
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• 2003

The stochiometric mixture of evaporating materials for the CuGaSe$_2$ single crystal thin films were prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal CuGaSe$_2$, it was found tetragonal structure whose lattice constant no and co were 5.615$\AA$ and 11.025$\AA$, respectively. To obtains the single crystal thin films, CuGaSe$_2$ mixed crystal was deposited on throughly etched GaAs(100) by the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were 61$0^{\circ}C$ and 45$0^{\circ}C$ respectively, and the growth rate of the single crystal thin films was about 0.5${\mu}{\textrm}{m}$/h. The crystalline structure of single crystal thin films was investigated by the double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of van der pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by pizoelectric scattering in the temperature range 30K to 150K and by polar optical scattering in the temperature range 150K to 293K. The optical energy gaps were found to be 1.68eV for CuGaSe$_2$ single crystal thin films at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation then the constants in the Varshni equation are given by a=9.615$\times$ 10$^{-4}$ eV/K, and $\beta$=335K. From the photocurrent spectra by illumination of polarized light of the CuGaSe$_2$ single crystal thin films. We have found that values of spin orbit coupling ΔSo and crystal field splitting ΔCr was 0.0900eV and 0.2498eV, respectively. From the PL spectra at 20K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be 0.0626eV and the dissipation energy of the acceptor-bound exciton and donor-bound exciton to be 0.0352eV, 0.0932eV, respectively.

• Journal of the Korean Vacuum Society
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• v.19 no.4
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• pp.293-299
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• 2010

Vertically aligned ZnO nanorods on Si (111) substrate were prepared by hydrothermal method. The ZnO nanorods on spin-coated seed layer were synthesized at $140^{\circ}C$ for 6 hours in autoclave and were thermally annealed in argon atmosphere for 20 minutes at temperature of 300, 500, $700^{\circ}C$. The effects of the thermal annealing on the structural and optical properties of the grown on ZnO nanorods were investigated by X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), photoluminescence (PL). All the ZnO nanorods show a strong ZnO (002) and weak (004) diffraction peak, indicating c-axis preferred orientation. The residual stress of the ZnO nanorods is changed from compressive to tensile by increasing annealing temperature. The hexagonal shaped ZnO nanorods are observed. The PL spectra of the ZnO nanorods show a sharp near-band-edge emission (NBE) at 3.2 eV, which is generated by the free-exciton recombination and a broad deep-level emission (DLE) at about 2.12~1.96 eV, which is caused by the defects in the ZnO nanorods. The intensity of the NBE peak is decreased and the DLE peak is red-shifted due to oxygen-related defects by thermal annealing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04a
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• pp.27-28
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• 2008

We have studied an organic layer-thickness dependent electrical and optical properties of organic light-emitting diodes in a device structure of ITO/TPD/$Alq_3$/LiF/Al. While a hole-transport layer thickness of TPD was varied from 35 to 65nm, an emissive layer thickness of $Alq_3$ was varied from 50 to 100nm. A ratio of those two layers was kept to about 2:3. Variation of the layer thickness changes a traverse time of injected carriers across the organic layer, so that it may affect on the chance of probability of exciton formation. Current-voltage-luminance characteristics of the devices show that there are typical rectifying behaviors, and the luminance reaches about $30,000cd/m^2$. Thickness-dependent current efficiency shows that there is a gradual increase of the efficiency as the total layer thickness increases. The efficiency becomes saturated to be about 10cd/A when the total thickness is above 140nm. They show that emission was from the $Alq_3$ layer, because the peak wavelength is about 525nm. View angle-dependent emission spectra show that the emission intensity decreases as the angle increases.

• Journal of the Korean Vacuum Society
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• v.16 no.3
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• pp.192-196
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• 2007

ZnSe/CdSe/ZnSe single quantum wells with different well thickness were grown by hot wall epitaxy. The quantum well thicknesses were measured by TEM. The critical thickness of single quantum well layer was found to be about $9{\AA}$ from the intensities and the full-width at half maximum of photoluminescence(PL) spectra. When the thickness of quantum wells was less than the critical thickness, the Stoke's shift was confirmed from the comparison between PL and photoluminescence excitation spectra, and it may be due to the exciton binding energy. The PL peak energy dependence on the quantum well thickness was coincident with the theoretical values.

• Advances in nano research
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• v.5 no.3
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• pp.261-279
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• 2017

Spectroscopic investigation of Si quantum dots (Si-QDs) embedded in silicon nitride was performed over a broad stoichiometry range to optimize light emission. Plasma-enhanced chemical vapor deposition was used to grow the $SiN_x$ films on Si (001) substrates. The film composition was controlled via the flow ratio of silane ($SiH_4$) and ammonia ($NH_3$) in the range of R = 0.45-1.0 allowed to vary the Si excess in the range of 21-62 at.%. The films were submitted to annealing at $1100^{\circ}C$ for 30 min in nitrogen to form the Si-QDs. The properties of as-deposited and annealed films were investigated using spectroscopic ellipsometry, Fourier transform infrared spectroscopy, Raman scattering and photoluminescence (PL) methods. Si-QDs were detected in $SiN_x$ films demonstrating the increase of sizes with Si excess. The residual amorphous Si clusters were found to be present in the films grown with Si excess higher than 50 at.%. Multi-component PL spectra at 300 K in the range of 1.5-3.5 eV were detected and nonmonotonous varying total PL peak versus Si excess was revealed. To identify the different PL components, the temperature dependence of PL spectra was investigated in the range of 20-300 K. The analysis allowed concluding that the "blue-orange" emission is due to the radiative defects in a $SiN_x$ matrix, whereas the "red" and "infrared" PL bands are caused by the exciton recombination in crystalline Si-QDs and amorphous Si clusters. The nature of radiative and no radiative defects in $SiN_x$ films is discussed. The ways to control the dominant PL emission mechanisms are proposed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.266-272
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• 2002

The stochiometric mixture of evaporating materials for the ZnIn$_2$S$_4$ single crystal thin film was prepared from horizontal furnace. To obtain the ZnIn$_2$S$_4$ single crystal thin film, ZnIn$_2$S$_4$ mixed crystal was deposited on throughly etched semi-insulating GaAs(100) in the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were 610 $^{\circ}C$ and 450 $^{\circ}C$, respectively and the growth rate of the ZnIn$_2$S$_4$ single crystal thin film was about 0.5 $\mu\textrm{m}$/hr. The crystalline structure of ZnIn$_2$S$_4$ single crystal thin film was investigated by photo1uminescence and double crystal X-ray diffraction(DCXD) measurement. The carrier density and mobility of ZnIn$_2$S$_4$ single crystal thin film measured from Hall effect by van der Pauw method are 8.51${\times}$10$\^$17/ cm$\^$-3/, 291 $\textrm{cm}^2$/V$.$s at 293 $^{\circ}$K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the ZnIn$_2$S$_4$ single crystal thin film, we have found that the values of spin orbit splitting ΔSo and the crystal field splitting ΔCr were 0.0148 eV and 0.1678 eV at 10 $^{\circ}$K, respectively. From the photoluminescence measurement of ZnIn$_2$S$_4$ single crystal thin film, we observed free excition (E$\_$X/) typically observed only in high quality crystal and neutral donor bound exciton (D$^{\circ}$,X) having very strong peak intensity. The full width at half maximum and binding energy of neutral donor bound excition were 9 meV and 26 meV, respectively. The activation energy of impurity measured by Haynes rule was 130 meV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.171-174
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• 2004

The stochiometric $AgGaSe_2$ polycrystalline mixture of evaporating materials for the $AgGaSe_2$ single crystal thin film was prepared from horizontal furnace. To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal and semi-insulating GaAs(100) wafer were used as source material and substrate for the Hot Wall Epitaxy (HWE) system, respectively. The source and substrate temperature were fixed at $630^{\circ}C$ and $420^{\circ}C$, respectively. The thickness of grown single crystal thin films is $2.1{\mu}m$. The single crystal thin films were investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. The carrier density and mobility of $AgGaSe_2$ single crystal thin films measured from Hall effect by van der Pauw method are $4.89{\times}10^{17}\;cm^{-3},\;129cm^2/V{\cdot}s$ at 293K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the $AgGaSe_2$ single crystal thin film, we have found that the values of spin orbit splitting ${\Delta}S_o$ and the crystal field splitting ${\Delta}C_r$ were 0.1762 eV and 0.2494 eV at 10 K, respectively. From the photoluminescence measurement of $AgGaSe_2$ single crystal thin film, we observed free excition $(E_X)$ observable only in high quality crystal and neutral bound exciton $(D^o,X)$ having very strong peak intensity And, the full width at half maximum and binding energy of neutral donor bound excition were 8 meV and 14.1 meV, respectively. By Haynes rule, an activation energy of impurity was 141 meV.

• Journal of Powder Materials
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• v.24 no.1
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• pp.11-16
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• 2017

In this study, simple chemical synthesis of green emitting Cd-free InP/ZnS QDs is accomplished by reacting In, P, Zn, and S precursors by one-pot process. The particle size and the optical properties were tailored, by controlling various experimental conditions, including [In]/[MA] (MA: myristic acid) mole ratio, reaction temperature and reaction time. The results of ultraviolet-visible spectroscopy (UV-vis), and of photoluminescence (PL), reveal that the exciton emission of InP was improved by surface coating, with a layer of ZnS. We report the correlation between each experimental condition and the luminescent properties of InP/ZnS core/shell QDs. Transmission electron microscopy (TEM), and X-ray powder diffraction (XRD) techniques were used to characterize the as-synthesized QDs. In contrast to core nanoparticles, InP/ZnS core/shell treated with surface coating shows a clear ultraviolet peak. Besides this work, we need to study what clearly determines the shell kinetic growth mechanism of InP/ZnS core shell QDs.

• Journal of the Korean Vacuum Society
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• v.16 no.4
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• pp.298-304
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• 2007

We have studied the effect of $N_2$ flow rate on the structural and optical properties of GaN nanorods grown on (111) Si substrates by radio-frequency plasma-assisted molecular-beam epitaxy. The hexagonal shape nanorods with lateral diameters from 80 to 190 nm with increasing $N_2$ flow rate from 1.1 to 2.0 sccm are obtained. However, the ratio of length (thickness) and compact region increases with increasing $N_2$ flow rate up to 1.7 sccm and then saturate. From the photoluminescence, free exciton transition is clearly observed for GaN nanorods with low $N_2$ flow rate. And the PL peak energies are blue-shifted with decreasing diameter of the GaN nanorods due to size effect. Temperature-dependent photoluminescence spectra for the nanorods with $N_2$ flow rate of 1.7 sccm show an abnormal behavior like "S-shape" with increasing temperature.