• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2002.11a
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• pp.207-211
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• 2002

Anodizing film was prepared by anodic oxidation of pure aluminum(purity > 99.50) using DC power supply for constant current mode in an electrolytic solution of surface of sulfuric acid. Effects of pre-treatment process such as chemical polishing, acid cleaning, alkali etching before anodic oxidation, were studied to microstructures and surface morphologies. A roughness on surface of anodizing film had to be decreased for amorphous phase by anodic oxidation. A roughness on surface of anodizing film decrease as annealing temperature increased in chemical polishing.

• Transactions on Electrical and Electronic Materials
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• v.14 no.6
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• pp.304-307
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• 2013

Reverse engineering of semiconductor devices utilizes delayering processes, in order to identify how the interconnection lines are stacked over transistor gates. Cu metal has been used in recent fabrication technologies, and de-processes becomes more difficult with the shrinking device dimensions. In this article, reverse engineering technologies to reveal the Cu interconnection lines and Cu via-plugs embedded in dielectric layers are investigated. Stacked dielectric layers are removed by $CF_4$ plasma etching, then the exposed planar Cu metal lines and via-plugs are selectively delineated by wet chemical solution, instead of the commonly used plasma-based dry etch. As a result, we have been successful in extracting the layouts of multiple layers within a system IC, and this technique can be applicable to other logic IC, analog IC, and CMOS IC, etc.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.347-350
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• 2001

A typical Mold method is to form a gate electrode, a gate oxide, and emitter tip after fabrication of mold shape using wet-etching of Si substrate. In this study, however, new Mold method using a side wall space structure is used in order to make sharper emitter tip with a gate electrode. Using LPCVD(low pressure chemical vapor deposition), a gate oxide and electrode layer are formed on a Si substrate, and then BPSG(Boro phospher silicate glass) thin film is deposited. After, the BPSG thin film is flowed into a mold as high temperature in order to form a sharp mold structure. Next TiN thin film is deposited as a emitter tip substance. The unfinished device with a glass substrate is bonded by anodic bonding techniques to transfer the emitters to a glass substrate, and Si substrate is etched using KOH-deionized water solution. Finally, we made sharp field emitter array with gate electrode on the glass substrate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.950-952
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• 2003

This paper have been studied fabrication and characteristics of disposable pH sensor using MEMS technology. The sensor has two open-well structure, the container for the internal electrolyte and electrode were formed by anisotropically etching a silicon substrate. unlike currently used KCI saturated solution, the structure was introduced hydrogel which take an advantage of miniaturization, bulk product, a low price. PU and CA/TP used to measurement ion detection, one is reference membrane and the other is pH. fabricated sensor is encapsulated entirely with epoxy, finally sensor was estimated various ion sorts and pH ranges.

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.954-957
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• 1999

We have synthesized carbon nanotubes by thermal chemical vapor deposition of $C_2$H$_2$ on transition metal-coated silicon substrates. Carbon nanotubes are uniformly synthesized on a large area of the plain Si substrates, different from previously reported porous Si substrates. It is observed that surface modification of transition metals deposited on substrates by either etching with dipping in a HF solution and/or NH$_3$ pretreatment is a crucial step for the nanotube growth prior to the reaction of $C_2$H$_2$gas. We will demonstrate that the diameters of carbon naotubes can be controlled by applying the different transition metals.

• Proceedings of the Optical Society of Korea Conference
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• 2009.10a
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• pp.288-289
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• 2009

We report an optimum fabrication condition for formation of concave lens shaped core cross-section of silica single-mode fibers with hydrofluoric (HF) acid solutions and arc discharge. A desired depth of curved cross-section of the silica fiber core and its surface smoothness were obtained with optimized concentration of the HF solution, etching time, and arc discharge condition.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 1999.10a
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• pp.197-203
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• 1999

Stainless steels in general has passive film having strong corrosion resistance on surface. Therefore it must be necessarily removed by etching in mixing solution of sulfuric and chloric acid before Nitriding treatment. But in the ion nitriding, nitride layer was easily formed because passive film was removed without difficult by sputtering effect. The removal extent of these passive films was greatly effected by gas mixing ratios and pressure and holding times of pre sputtering factors in pre sputtering stage. As a results of experiment it has been known that pre sputtering pressure and holding time was not nearly effective on the formation behavior of nitride layer. But when A/H2 gas mixing ratios was 1/2 (vol%) was the most effective of the all pre sputtering conditions. It was resulted from the combination of mechanical reaction byArgon bombardment and chemical reaction by reduction of hydrogen on the passive film.

• Proceedings of the KWS Conference
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• 2009.11a
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• pp.235-238
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• 2009

To study the relationship between spark ignition and the gap in the nano-scale region, the electric potential was applied to between a Pt-Ir tip and a gold substrate. The tip was sharpened by electro-chemical etching process in the solution of $CaCl_2;H_2O$ and acetone. The radius of tip was measured to be around 200nm and attached to the scanning probe microscope to control the gap between the tip and the substrate. The electric potential of 10V to 80V was applied to initialize the spark. The gaps and the current profile were measured to analyze the characteristics of spark ignition. A spark sustaining time was measured to be between 50ns and 200ns depending on the applied electric potential and the gap between the electrodes. The continuous electric discharge was successfully sustained up to 1 second of spark or arc time. The developed process can be applicable to the micro-scale fabrication of automotive sensors as a similar concept of GTAW.

• Transactions on Electrical and Electronic Materials
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• v.11 no.4
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• pp.190-193
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• 2010

This report covers an effective fabrication method of graphene nanoribbon for top-gated field effect transistors (FETs) utilizing electron beam lithography with a bi-layer resists (XR-1541/poly methtyl methacrylate) process. To improve the variation of the gating properties of FETs, the residues of an e beam resist on the graphene channel are successfully taken off through the combination of reactive ion etching and a lift-off process for the XR-1541 bi-layer. In order to identify the presence of graphene structures, atomic force microscopy measurement and Raman spectrum analysis are performed. We believe that the lift-off process with bi-layer resists could be a good solution to increase gate dielectric properties toward the high quality of graphene FETs.

• Journal of Integrative Natural Science
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• v.2 no.3
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• pp.207-210
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• 2009

Multiple rugate structures can be etched on a silicon wafer and placed in the same physical location, showing that many sharp spectral lines can be obtained in the optical reflectivity spectrum. Porous silicon samples were prepared by electrochemical etch of heavily doped p-type silicon wafers. The etching solution consisted of a 3:1 volume mixture of aqueous 48% hydrofluoric acid and absolute ethanol. Galvanostatic etch was carried out in a Teflon cell by using a two-electrode configuration with a Pt mesh counterelectrode. A sinusoidal current density waveform varying between 51.5 and $74.6mA/cm^2$ is applied. The anodization current was supplied by a Keithley 2420 high-precision constant current source which is controlled by a computer to allow the formation of PSi multilayer.