• Bulletin of the Korean Chemical Society
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• v.19 no.5
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• pp.575-579
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• 1998

The 77 K luminescence and excitation spectra, and 298 K infrared and absorption spectra of $cis-{\Alpha}-[Cr(trien)Cl_2]Cl{\cdot}H_2O$ (trien=triethylenetetramine) have been measured. Ligand field electronic transitions due to spin-allowed and spin-forbidden are assigned. The zero-phonon line in the excitation spectrum splits into two components by $198\; cm^{-1}$, and the large $^2E_g$ splitting can be reproduced by the modern ligand field theory. It is confirmed that nitrogen atoms of the trien ligand have a strong σ-donor character, but chloride ligand has weak σ- and π -donor properties toward chromium(III) ion.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.17 no.1
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• pp.58-67
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• 1992

Optical absorption and photoluminescences(PL) of MgGa2Se4 and MgGa2Se4 : Co2+ single crustals were guown by the Bridgman method have been investigated in the visible and near-in frared regions. The optical absorption spectrum showed three absorption peak at 760 nm(13158nm, -1, 1.63eV), 1640nm(6097cm-1, 0.75eV).and 2500nm(4000cm-1,0.49eV) which are assigned the electronic transitions between the ground state and excited states of Co2+ ions with Td sym-metry in MgGa2Se4 host lattice. In PL spectrum the visible emission bands as well as the infrared emission band in these single cuystals are obserned. The visible emission bands are explained due to the radiative transitions of electrons from quasi continusly distributed tarps below the bottom of the conduction band to acceptor levels above the top of the valence band in the proposed energy level scheme. At the same time, it is considered that the infrated emission bands are attributed to electron transitions from the deep levels to the acceptor levels. The mechanism of the optical transition os well explained in terms of the energy diagram of MgGa2Se4.

• Advances in nano research
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• v.2 no.3
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• pp.157-172
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• 2014

The three-dimensional Nano-Electronic Modeling toolkit (NEMO 3-D) is an open source software package that allows the atomistic calculation of single-particle electronic states and optical response of various semiconductor structures including bulk materials, quantum dots, impurities, quantum wires, quantum wells and nanocrystals containing millions of atoms. This paper, first, describes a software module introduced in the NEMO 3-D toolkit for the calculation of electronic bandstructure and interband optical transitions in nanowires having wurtzite crystal symmetry. The energetics (Hamiltonian) of the quantum system under study is described via the tight-binding (TB) formalism (including $sp^3$, $sp^3s^*$ and $sp^3d^5s^*$ models as appropriate). Emphasis has been given in the treatment of surface atoms that, if left unpassivated, can lead to the creation of energy states within the bandgap of the sample. Furthermore, the developed software has been validated via the calculation of: a) modulation of the energy bandgap and the effective masses in [0001] oriented wurtzite nanowires as compared to the experimentally reported values in bulk structures, and b) the localization of wavefunctions and the optical anisotropy in GaN/AlN disk-in-wire nanowires.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.6 s.348
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• pp.30-37
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• 2006

This paper presents a modified scan cell architecture to reduce the power dissipation during testing. It not only eliminates switching activities in the combinational logic during scan shifting but also reduces switching activities in the scan chain during the time. Furthermore, it limits the transitions on capture cycles. It can be made for test-per-scan BIST and employed in both single scan style and multiple scan style. Experimental results demonstrate that the proposed structure achieves the same fault coverage with lower power consumption compared to other existing BIST schemes.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1239-1243
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• 1997

A phase analysis in the solid solution of (1-x) PbFe1/2Nb1/2O3-xPbCo1/2W1/2O3 is conducted by dielectric properties, heat capacity and E-P hysteresis at x=0.1 interval. Lattice constants and superlattice intensity are analyzed by the x-ray diffraction, and the temperature - composition phase diagram is determined. The system is found to form a solid solution of perovskite structure throughout the entire composition range, but the nature of phase transitions changes from ferroelectric-paraelectric for $0{\leq}x{\leq}0.5$ to antiferroelectric-paraelectric for $0.6{\leq}x{\leq}1.0$. The transitions of ferroelectric-paraelectric and antiferroelectric-paraelectric for $0.2{\leq}x{\leq}0.5$ and for $0.6{\leq}x{\leq}0.8$, respectively, are diffuse, while those of the ferroelectric-paraelectric and the antiferroelectric-paraelectric for $0.0{\leq}x{\leq}0.1$ and $0.9{\leq}x{\leq}1.0$, respectively are sharp.

• Advances in nano research
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• v.2 no.4
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• pp.211-217
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• 2014

The self-assembled strain-induced sub-micrometric islands and nanostructures are grown from In-As-Sb-P quaternary liquid phase on InAs (100) substrates in Stranski-Krastanow growth mode. Two samples are under consideration. The first sample consists of unencapsulated islands and lens-shape quantum dots (QDs) grown from expressly inhomogeneous liquid phase. The second sample is an n-InAs/p-InAsSbP heterostructure with QDs embedded in the p-n junction interface. The morphology, size and shape of the structures are investigated by high-resolution scanning electron (SEM) and transmission electron (TEM) microscopy. It is shown that islands, as they decrease in size, undergo shape transitions. Particularly, as the volume decreases, the following succession of shape transitions are detected: sub-micrometric truncated pyramid, {111} facetted pyramid, {111} and partially {105} facetted pyramid, completely unfacetted "pre-pyramid", hemisphere, lens-shaped QD, which then evolves again to nano-pyramid. A critical size of $5{\pm}2nm$ for the shape transformation of InAsSbP-based lens-shaped QD to nano-pyramid is experimentally measured and theoretically evaluated.

• Bulletin of the Korean Chemical Society
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• v.31 no.8
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• pp.2151-2157
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• 2010

Spectroscopic and quantum mechanical studies of the Et3PAuCl complex were performed to characterize the effect of aurophilicity on the optical properties. When excited with UV light at low temperature, the crystalline complex produced a deep luminescence in both the blue (high-energy) and red (low-energy) regions of the spectrum. The intensity of the low-energy luminescence was markedly reduced in the powdered state and quenched in the solution state. Time-dependent density functional theory (TD-DFT) calculations on electronic structures of both the ground and excited states of aggregates $[Et_3PAuCl]_n$ (n = 1 - 3) indicated that the low-energy luminescence was attributable to Au-centered transitions, which are significantly affected by aurophilic interactions. By contrast, the high-energy luminescence appeared to be independent of the state of the complex and was strongly associated with the charge transfer from Cl to Au.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.8
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• pp.622-626
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• 2011

Lead-free piezoelectric ceramics with the composition of $(Na_{0.54}K_{0.46})_{0.96}Li_{0.04}(Nb_{1-0.10-x}Ta_{0.10}Sb_x)O_{3}$ (x= 0~8 mol%) were fabricated by nomal sintering at $1,090^{\circ}C$ for 5 h. the phase structure, microstructure and electrical properties were investigated with a emphasis on the influence of the Sb content. All samples exhibit a single perovskite phase over the whole compositional range. For the ceramics with x= 4 [mol%], two phase transitions are observed at $75^{\circ}C$ and $366^{\circ}C$, corresponding to the phase transitions of orthorhombic to tetragonal (To-t) and tetragonal to cubic (Tc), respectively. high electrical properties of $d_{33}$= 210.83 pC/N, kp= 40%, ${\varepsilon}_r$= 1,091.35, $\rho$= 4.54 g/$cm^2$ were obtained from the specimen with x= 4 [mol%], which suggests that the composition ceramics is a promising lead-free piezoelectric material.

• The Journal of the Korea institute of electronic communication sciences
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• v.17 no.3
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• pp.399-408
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• 2022

This paper proposes a corrective control system to achieve fault-tolerant control for input/output asynchronous sequential circuits vulnerable to transient faults violating fundamental mode operations. To overcome non-fundamental mode faults occurring in transient transitions of asynchronous sequential circuits, it is necessary to determine the end of unauthorized state transitions caused by the faults and to stably take the circuit from the faulty state to a desired state that is output equivalent with the normal next stable state. We address the existence condition for a proper output-feedback corrective controller that achieves fault diagnosis and fault-tolerant control for these non-fundamental mode faults. The corrective controller and asynchronous sequential circuit are implemented on field-programming gate array to demonstrate the synthesis procedure and applicability of the proposed control scheme.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.5
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• pp.505-512
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• 2023

This study investigated crystal structures, microstructures, and electric-field-induced strain (EFIS) properties of Bi-based lead-free ferroelectric/relaxor composites. Bi_1/2Na_0.82K_0.18)_1/2TiO₃ (BNKT) as a ferroelectric material and 0.78Bi_1/2(Na_0.78K_0.22)_1/2TiO₃-0.02LaFeO₃ (BNKT2LF) as a relaxor material were synthesized using a conventional solid-state reaction method, and the resulting BNKT2LF powders were subjected to high-energy ball milling (HEBM) after calcination. As a result, HEBM proved a larger average grain size of sintered samples compared to conventional ball milling (CBM). In addition, the increased sintering time led to grain growth. Furthermore, HEBM treatment and sintering time demonstrated a significant effect on EFIS of BNKT/BNKT2LF composites. At 6 kV/mm, 0.35% of the maximum strain (S_max) was observed in the HEBM sample sintered for 12 h. The unipolar strain curves of CBM samples were almost linear, indicating almost no phase transitions, while HEBM samples displayed phase transitions at 5~6 kV/mm for all sintering time levels, showing the highest S_max/E_max value of 700 pm/V. These results indicated that HEBM treatment with a long sintering time might significantly enhance the electromechanical strain properties of BNT-based ceramics.