Strain-induced islands and nanostructures shape transition's chronology on InAs (100) surface |
Gambaryan, Karen M.
(Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science)
Aroutiounian, Vladimir M. (Department of Physics of Semiconductors and Microelectronics, Yerevan State University) Simonyan, Arpine K. (Department of Physics of Semiconductors and Microelectronics, Yerevan State University) Ai, Yuanfei (Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science) Ashalley, Eric (Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China) Wang, Zhiming M. (Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science) |
1 | Ross, F.M., Tersoff, J. and Tromp, R.M. (1998), "Coarsening of self-assembled Ge quantum dots on Si (001)", Phys. Rev. Lett., 80, 984. DOI ScienceOn |
2 | Safonov, K.L., Dubrovskii, V.G., Sibirev, N.V. and Trushin, Y.V. (2007), "Computer simulation of coherent island growth in Ge/Si and InAs/GaAs systems", Tech. Phys. Lett., 33, 490. DOI |
3 | Stranski, I. and Krastanow, L. (1938), Math.-Naturwiss., 146, 797. |
4 | Tersoff, J. and LeGoues, F.K. (1994), "Competing relaxation mechanisms in strained layers", Phys. Rev. Lett., 72, 3570. DOI ScienceOn |
5 | Tersoff, J., Spencer, B.J., Rastelli, A. and von Kanel, H. (2002), "Barrierless formation and faceting of SiGe islands on Si (001)", Phys. Rev. Lett., 89, 196104. DOI |
6 | Tersoff, J. and Tromp, R.M. (1993) "Shape transition in growth of strained islands: spontaneous formation of quantum wires", Phys. Rev. Lett., 70, 2782. DOI ScienceOn |
7 | Wu, J., Shao, D., Dorogan, V.G., Li, A.Z., Li, S., DeCuir, Jr., E.A., Manasreh, M.O., Wang, Z.M., Mazur, Y.I. and Salamo, G.J. (2010), "Intersublevel infrared photodetector with strain-free GaAs quantum dot pairs grown by high-temperature droplet epitaxy", Nano Lett., 10(4), 1512-1516. DOI |
8 | Zinke-Allmang, M., Feldman, L.C. and Grabow, M.H. (1992), "Clustering on surfaces", Surf. Sci. Rep., 16, 377. DOI |
9 | Bimberg, D., Grundmann, M. and Ledentsov, N.N. (1998), Quantum Dot Heterostructures, Wiley, New York, NY, USA. |
10 | Daruka, I., Tersoff J. and Barabasi, A.L. (1999), "Shape transition in growth of strained islands", Phys. Rev. Lett., 82, 2753. DOI |
11 | Gambaryan, K.M., Aroutiounian, V.M., Boeck, T., Schulze, M. and Soukiassian, P.G. (2008a), "Straininduced InAsSbP islands and quantum dots grown by liquid phase epitaxy on InAs (100) substrate", J. Phys. D: Appl. Phys., 41, 162004. DOI |
12 | Gambaryan, K.M., Aroutiounian, V.M., Simonyan, A.K. and Boeck, T. (2008b), "Shape transition of straininduced InAsSbP islands at liquid-phase epitaxy on InAs (100) substrate: from pyramid to semiglobe", Arm. J. Phys., 1(3), 208-218. |
13 | Medeiros-Ribeiro, G., Kamins, T.I., Ohlberg, D.A.A. and Williams, R.S. (1998), "Shape transition of germanium nanocrystals on a silicon (001) surface from pyramids to domes", Science, 279, 353. DOI |
14 | Hanke, M., Schmidbauer, M., Grigoriev, D., Raidt, H., Schafer, P., Kohler, R., Gerlitzke, A.K. and Wawra, H. (2004), "SiGe/Si (001) Stranski-Krastanow islands by liquid-phase epitaxy: diffuse x-ray scattering versus growth observations", Phys. Rev. B, 69, 075317. DOI |
15 | Kratzer, P., Liu, Q.K.K., Acosta-Diaz, P., Manzano, C., Costantini, G., Songmuang, R., Rastelli, A., Schmidt, O.G. and Kern, K. (2006), "Shape transition during epitaxial growth of InAs quantum dots on GaAs (001): Theory and experiment", Phys. Rev. B, 73, 205347. DOI |
16 | Liu, N., Tersoff, J., Baklenov, O., Holmes, A.L., Jr. and Shih, C.K. (2000), "Nonuniform composition profile in In0.5Ga0.5As alloy quantum dots", Phys. Rev. Lett., 84, 334. DOI |
17 | Mo, Y.W., Savage, D.E., Swartzentruber, B.S. and Lagally, M.G. (1990), "Kinetic pathway in Stranski-Krastanov growth of Ge on Si (001)", Phys. Rev. Lett., 65, 1020. DOI ScienceOn |
18 | Ponchet, A., Le Corre, A., L'haridon, H., Lambert, B. and Salaun, S. (1995), "Relationship between self-organization and size of InAs islands on InP (001) grown by gas-source molecular beam epitaxy", Appl. Phys. Lett., 67, 1850. DOI |
19 | Rastelli, A., Von Kanel, H., Spencer, B.J. and Tersoff, J. (2003), "Prepyramid-to-pyramid transition of SiGe islands on Si(001)", Phys. Rev. B, 68, 115301. DOI |
20 | Reaves, C.M., Pelzel, R.I., Hsueh, G.C., Weinberg, W.H. and DenBaars, S.P. (1996), "Formation of self-assembled InP islands on a GaInP/GaAs(311)A surface ", Appl. Phys. Lett., 69, 3878. DOI |
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