• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1993년도 추계학술대회 논문집
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• pp.105-108
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• 1993

Behavior of electron in polyimide LB films of Al/polyimide LB films/Au (MIM) structures is reported in the present paper. From experimental results, it is known that there is a process where electron moves from Au electrode to Al electrode through LB film. And the electrons are presumed to move by diffusion since the direction is opposite to electric field.

• 진공이야기
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• 제1권1호
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• pp.17-20
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• 2014

This article introduces the basic concepts of various soft X-ray spectroscopies in the study of surface and interface electronic structures. Especially, recent results of X-ray photoelectron spectroscopy experiments on organic/inorganic thin films and a lead-free solder alloys will be discussed. Soft X-ray spectroscopies to understand the chemical and electrical properties would be of broad interest in the vacuum science communities.

• 한국전기전자재료학회논문지
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• 제16권5호
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• pp.404-408
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• 2003

The characterization for several multi-layer embedded inductors with different structures was investigated. The optimized equivalent circuit models for several test structures were obtained from HSPICE. Building blocks are modeled using Partial element equivalent circuit method. The mean and the standard deviation of model parameters were extracted and predictive modeling was performed on different test structure. From this study, the characteristic of multi-layer inductors can be predicted.

• Journal of the Optical Society of Korea
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• 제7권1호
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• pp.7-12
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• 2003

A numerical approach for the analysis of quantum wire structures has been presented using a finite-element method which includes the strain analysis and the band analysis of the Luttinger-Kohn Hamiltonian with the deformation potential. A systematic implementation of the multiband Hamiltonian in the finite-element scheme is outlined and the corresponding variational functional is derived for arbitrarily shaped strained quantum wire arrays. This method is then applied to calculate the band structures of strained quantum wire arrays.

• Smart Structures and Systems
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• 제9권4호
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• pp.335-353
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• 2012

This study suggests a simple two-step method for structural vibration-based health monitoring for beam-like structures which only utilizes mode shape curvature and few natural frequencies of the structures in order to detect and localize cracks. The method is firstly based on the application of wavelet transform to detect crack locations from mode shape curvature. Then particle swarm optimization is applied to evaluate crack depth. As the Rayleigh quotient is introduced to estimate natural frequencies of cracked beams, the relationship of natural frequencies and crack depths can be easily obtained with only a simple formula. The method is demonstrated and validated numerically, using the numerical examples (cantilever beam and simply supported shaft) in the literature, and experimentally for a cantilever beam. Our results show that mode shape curvature and few estimated natural frequencies can be used to detect crack locations and depths precisely even under a certain level of noise. The method can be extended for health monitoring of other more complicated structures.

• Transactions on Electrical and Electronic Materials
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• 제7권4호
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• pp.157-162
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• 2006

Chemical-mechanical polishing (CMP), one of the dominant technology for ULSI planarization, is used to flatten the micro electro-mechanical systems (MEMS) structures. The objective of this paper is to achieve good planarization of the deposited film and to improve deposition efficiency of subsequent layer structures by using surface-micromachining process in MEMS technology. Planarization characteristic of poly-Si film deposited on thin oxide layer with MEMS structures is evaluated with different slurries. Patterns used for this research have shapes of square, density, line, hole, pillar, and micro engine part. Advantages of CMP process for MEMS structures are observed respectively by using the test patterns with structures larger than 1 urn line width. Preliminary tests for material selectivity of poly-Si and oxide are conducted with two types of silica slurries: $ILD1300^{TM}\;and\;Nalco2371^{TM}$. And then, the experiments were conducted based on the pretest. A selectivity and pH adjustment of slurry affected largely step heights of MEMS structures. These results would be anticipated as an important bridge stone to manufacture MEMS CMP slurry.

• E2M - 전기 전자와 첨단 소재
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• 제7권4호
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• pp.341-346
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• 1994

• 한국전기전자재료학회논문지
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• 제25권2호
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• pp.91-95
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• 2012

ZnO thin films were deposited on p-type 4H-SiC substrate by pulsed laser deposition. ZnO nanowires were formed on p-type 4H-SiC substrate by furnace. Ti/Au electrodes were deposited on ZnO thin film/SiC and ZnO nanowire/SiC structures, respectively. Structural and crystallographical properties of the fabricated ZnO thin film/SiC and ZnO nanowire/SiC structures were investigated by field emission scanning electron microscope and X-ray diffraction. In this work, resistance and sensitivity of ZnO thin film/SiC gas sensor and ZnO nanowire/SiC gas sensor were measured at $300^{\circ}C$ with various CO gas concentrations (0%, 90%, 70%, and 50%). Resistance of gas sensor decreases at CO gas atmosphere. Sensitivity of ZnO nanowire/SiC gas sensor is twice as big as sensitivity of ZnO thin film/SiC gas sensor.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 C
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• pp.1216-1219
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• 1994

A reflection type SEED from LP-MOCVD grown InGaAs/GaAs ESQW structures, with 5% In fraction, has been fabricated and its basic characteristics were investigated. Its intrinsic region consists of 50 pairs of alternating $100{\AA}$ $In_{0.05}Ga_{0.95}As$ barrier and $100{\AA}$ GaAs layers. And a multilayer reflector stack of $Al_{0.12}Ga_{0.88}As(641{\AA})-/AlAs(774{\AA})$ was vertically integrated below the p-i-n structures. The device processing includes the mesa etching, insulator deposition, indium metallization, and thermal alloy for Ohmic contact. Photocurrent spectrum measurement showed the exciton absorption peak at 905nm and availability as a optical switching device. This device showed a contrast ratio of 2:1 by the reflectance spectrum measurement.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.172-173
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• 2005

The electronic state of ZnO doped with Y was calculated using the density functional theory. In this study, the program used for the calculation on theoretical structures of ZnO and doped ZnO was Vienna Ab-initio Simulation Package (VASP), which is a sort of pseudo potential method. The detail of electronic structure was obtained by the descrite variational $X\alpha$ (DV-$X\alpha$) method, which is a sort of molecular orbital full potential method. The optimized crystal structures obtained by calculations were compared to the measured structure. The density of state and energy levels of dopant elements was shown and discussed in association with optical properties.