Calculation on Electronic State of Y-doped ZnO

Y이 도핑된 ZnO의 전자상태 계산

  • 이동윤 (한국전기연구원 전자기소자연구그룹) ;
  • 이원재 (한국전기연구원 전자기소자연구그룹) ;
  • 송재성 (한국전기연구원 전자기소자연구그룹) ;
  • 구보근 (한국전기연구원 전자기소자연구그룹) ;
  • 김현주 (한국전기연구원 전자기소자연구그룹)
  • Published : 2005.07.07

Abstract

The electronic state of ZnO doped with Y was calculated using the density functional theory. In this study, the program used for the calculation on theoretical structures of ZnO and doped ZnO was Vienna Ab-initio Simulation Package (VASP), which is a sort of pseudo potential method. The detail of electronic structure was obtained by the descrite variational $X\alpha$ (DV-$X\alpha$) method, which is a sort of molecular orbital full potential method. The optimized crystal structures obtained by calculations were compared to the measured structure. The density of state and energy levels of dopant elements was shown and discussed in association with optical properties.

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