• Title/Summary/Keyword: electronic current

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Thickness Dependence of Stress Currents in Silicon Oxide (실리콘 산화막에서 스트레스 전류의 두께 의존성)

  • 강창수;이형옥;이성배;서광일
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1997.11a
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    • pp.102-105
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    • 1997
  • The thickness dependence of stress voltage oxide currents has been measured in oxides with thicknesses between 10nm and 80nm. The oxide currents were shown to be composed of stress current and transient current. The stress current was caused by trap assited tunneling through the oxide. The transient current was caused by the tunneling charging and discharging of the trap in the interfaces. The stress current was used to estimate to the limitations on oxide thicknesses. The transient current was used to the data retention in memory devices.

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PFC control method using the charging current of the capacitor (커패시터 충전 전류를 이용한 PFC 제어 방법)

  • Lee, Seung-Heyon;Lee, Chi-Hwan
    • Proceedings of the KIPE Conference
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    • 2014.07a
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    • pp.13-14
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    • 2014
  • This paper is proposed the PFC control method of boost converter using a charging current of the capacitor. Around AC voltage peak point, PFC operation is stopped and the charging current of the capacitor is flowed. The charging current of the capacitor and the switching current makes the AC input current. The 150[W] converter was confirmed high PF and low THD.

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Electronic Dash-pot System Development for Power Electronic Circuit Protection using the Current Sensor

  • Kim, Chul-Ki;Ryu, Jae-Heun;Yoon, Dal-Hwan
    • Proceedings of the IEEK Conference
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    • 2002.07c
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    • pp.1401-1403
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    • 2002
  • This paper presents the development of an electronic dash-pot(EDP) system it)r protecting the power electronic circuit. The EDP play role protecting an equipment by disconnecting between voltage source and load system. Also, converting the existed electrical system into an electronic mechanism, it can reduce the power consumption and prevents the system damage due to over current.

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The Impact of Gate Leakage Current on PLL in 65 nm Technology: Analysis and Optimization

  • Li, Jing;Ning, Ning;Du, Ling;Yu, Qi;Liu, Yang
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.12 no.1
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    • pp.99-106
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    • 2012
  • For CMOS technology of 65 nm and beyond, the gate leakage current can not be negligible anymore. In this paper, the impact of the gate leakage current in ring voltage-controlled oscillator (VCO) on phase-locked loop (PLL) is analyzed and modeled. A voltage -to-voltage (V-to-V) circuit is proposed to reduce the voltage ripple on $V_{ctrl}$ induced by the gate leakage current. The side effects induced by the V-to-V circuit are described and optimized either. The PLL design is based on a standard 65 nm CMOS technology with a 1.8 V power supply. Simulation results show that 97 % ripple voltage is smoothed at 216 MHz output frequency. The RMS and peak-to-peak jitter are 3 ps and 14.8 ps, respectively.

Development and design of single-phase uninterruptible power supply (단상 UPS 제어기 설계 및 개발)

  • Kim, Hyung-Seop;You, Eun-Sik;Lee, Dong-Myung
    • Proceedings of the KIPE Conference
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    • 2014.11a
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    • pp.203-204
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    • 2014
  • In this paper, single-phase uninterruptible power supply design method is presented. In this control scheme, input current, output current and output voltage are used. For voltage control PR controller is used and that for current controller is PI controller. The gains for controllers are sought by the classical method for determining gains. Throughout simulations the performance of single-phase UPS is verified.

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Electrical Properties of Inductively Coupled Plasma by Argon Pressurebstract (아르곤 압력에 따른 유도결합형 폴라즈마의 전기적 특성)

  • Lee, Y.H.;Her, I.S.;Jo, J.U.;Kim, K.S.;Lee, J.C.;Choi, Y.S.;Park, D.H.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05e
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    • pp.89-91
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    • 2003
  • In this paper, using a Langmuir probe Ar gas characteristic of electrodeless fluorescent lamp which used an inductively coupled plasma were investigated. The RF output changed into 5-50W in 13.56MHz. At this time internal plasma voltage of the chamber and probe current were measured while changing in -70V - +70V with a supply voltage by Langmuir probe. If pressure of Ar gas was increased, the electric current tended to decrease. Also, an electric current was increased according to an increase of a RF output.

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A New Current Controlled Inverter with ZVT Switching

  • Lee S. R.;Jeon C. H.;Ko S. H.
    • Proceedings of the KIPE Conference
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    • 2001.10a
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    • pp.309-313
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    • 2001
  • A single-phase bi-directional inverter with a diode bridge-type resonant circuit to implement ZVT(Zero Voltage Transition) switching is proposed. It is shown that the polarized ramptime current control algorithm, a method that belongs to the family of ZACE(Zero Average Current Error) methods, is a suitable technique to integrate with a typical single-phase ZVT inverter. The proposed current control algorithm is analyzed to design the circuit with auxiliary switch which can operate with ZVT for the main power switch. The simulation results would be shown to verify the proposed current algorithm to turn the main power switch on with ZVT and to operate the inverter bi-directionally

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Effect of Electric Current on Friction of Hydraulic Members (유압구동재의 마찰에 미치는 전류의 영향)

  • 전성재;강인혁;류미라;조연상;박흥식
    • Proceedings of the Korean Society of Machine Tool Engineers Conference
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    • 2002.04a
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    • pp.16-21
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    • 2002
  • Generally, Oxidization film are generated by friction and wear in lubricant oil. It is effect that the heat and pressure act on contact area. Because the electrons movement progress the oxidization, if the electrons movement be regulated, the thickness of oxidization film can be regulated and friction characteristics can be improved. But electronic current can deteriorate friction characteristics, so various characteristics must be investigated on transforming of electronic current. Therefor, using the Norton equation, short current were transformed between ball and disk. Also, an experiment was carried out using ball on disk type tester. So, we studied up on effect of current for friction characteristics.

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Effect of Electric Current on Friction of Hydraulic Members (윤활하에서의 마찰 특성에 미치는 전류의 영향)

  • Jeon, Seong-Jae;Gang, In-Hyeok;Ryu, Mi-Ra;Jo, Yeon-Sang;Park, Hong-Sik
    • Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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    • 2002.05a
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    • pp.150-155
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    • 2002
  • Generally, Oxidization film are generated by friction and wear in lubricant oil. It is effect that the heat and pressure act on contact area. Because the electrons movement progress the oxidization, if the electrons movement be regulated, the thickness of oxidization film can be regulated and friction characteristics can be improved. But electronic current can deteriorate friction characteristics, so various characteristics must be investigated on transforming of electronic current. Therefor, using the Norton equation, short current were transformed between ball and disk. Also, an experiment was carried out using ball on disk type tester. So, we studied up on effect of current for friction characteristics.

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Power Consumption Analysis and Minimization of Electronic Shelf Label System (전자가격표시시스템의 소모전력 분석 및 최소화 방안)

  • Woo, Rinara;Kim, Jungjoon;Seo, Dae-Wha
    • IEMEK Journal of Embedded Systems and Applications
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    • v.9 no.2
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    • pp.75-80
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    • 2014
  • Energy consumption of sensor nodes is minimized because it has limited energy generator in wireless sensor network. Electronic shelf label system is one of application fields using wireless sensor networks. Battery size of small apparatus for displaying price is restricted. Therefore its current consumption have to be minimized. Furthermore the method for minimization of peak current would be considered because life cycle of coin battery used to display or RF is vulnerable to intensity of drain current. In this paper, we analyze current consumption pattern of low-power electronic shelf label system. Then we propose the method for minimization of current consumption by modification of software and hardware. Current consumption of the system using proposed method are approximately 15 to 20 percent lower than existing system and the life cycle of the system is approximately 10 percent higher than existing system.