• Applied Chemistry for Engineering
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• v.7 no.4
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• pp.698-706
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• 1996

Dehydrogenation of methanol to produce formaldehyde was carried out over various silica-alumina catalysts doped with alkali metals in a continuous flow system. The reaction was rather dependent on Lewis acid than Br${\ddot{o}}$nsted acid suggesting that dehydrogenation of methanol was an electronic reaction. The Br${\ddot{o}}$nsted acid sites on silica-alumina were neutralized by doping with alkali metals, and the neutralization effect of Br${\ddot{o}}$nsted acid was dependent on the electron-donating capacity of the dopant metals. Activation energy for dehydrogenation of methanol decreased when Br${\ddot{o}}$nsted acid was neutralized by doping with K.

• Journal of the Korean Ceramic Society
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• v.46 no.2
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• pp.181-188
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• 2009

The electrical property and microstructure in $BaTiO_3$ ceramics doped rare-earth ions with intermediate ionic size ($Dy^{3+},Ho^{3+},Y^{3+}$) were investigated. Microstructures have been characterized using scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray diffraction (XRD). Incorporation of rare-earth ions to $BaTiO_3$ ceramics depended on their ionic radius sensitively. Compared to Ho and Y ions, Dy ions provide $BaTiO_3$ ceramics with the high rate of densification and well-developed shell formation, due to their high solubility in the $BaTiO_3$ lattice, but the microstructure of Dy doped $BaTiO_3$ ceramics is unstable at high temperature, because Dy ions could not play a role of grain growth inhibition, leading to diffuse into $BaTiO_3$ lattice continuously after completion of densification during sintering. Comparing electrical property and microstructure, it is shown that the reliability of capacitor improved by high shell ratio.

• Korean Journal of Materials Research
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• v.30 no.3
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• pp.117-122
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• 2020

The effects of fast neutron irradiation on the electrical and optical properties of Li (3 at%) doped ZnSnO (ZTO) thin films fabricated using a sol-gel process are investigated. From the results of Li-ZTO TFT characteristics according to change of neutron irradiation time, the saturation mobility is found to increase and threshold voltage values shift to a negative direction from 1,000 s neutron irradiation time. X-ray photoelectron spectroscopy analysis of the O 1s core level shows that the relative area of oxygen vacancies is almost unchanged with different irradiation times. From the results of band alignment, it is confirmed that, due to the increase of electron carrier concentration, the Fermi level (E_F) of the sample irradiated for 1,000 s is located at the position closest to the conduction band minimum. The increase in electron concentration is considered by looking at the shallow band edge state under the conduction band edge formed by fast neutron irradiation of more than 1,000 s.

• Journal of the Korean Solar Energy Society
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• v.23 no.4
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• pp.29-35
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• 2003

We studied the water splitting into $H_2$ and $O_2$ using two different semiconductor photo catalysts and redox mediator, mimicking the Z-scheme mechanism of the photosynthesis, $H_2$ evolution took place on a Pt-$SrTiO_2$ (Cr-Ta doped) photocatalyst using $I^-$ electron donor under the visible light irradiation. The Pt-$WO_3$ photocatalyst showed an excellent activity of the $O_2$ evolution using $IO_3^-$ electron acceptor under visible light. $H_2$ and $O_2$ gases evolved in the stoichiometric ratio($H_2/O_2$=2) under visible light using a mixture of the Pt-$WO_3$ and Pt-$SrTiO_3$ (Cr-Ta doped) suspended in NaI aqueous solution. We proposed a two-step photo-excitation mechanism using redox mediator under the visible irradiation.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.3
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• pp.267-272
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• 1999

Micro-defects in the undoped and MgO-doped $LiNbO_3$ single crystals, which were grown from a congruent melting composition (48.6 mol% $Li_2$O) by the CZ (Czochralski) method, were analyzed using microscopic techniques such as optical microscopy (OM), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Effects of the dopant and g value (the fraction solidfied) on the domain structure and micro-defect were investigated to build a corelationship with a growth condition of crystal. It was observed that the micro-defect concentrated near the domain wall is caused by high stress. Especially, the micro-defect was observed to be biased toward a certain side of the domain wall.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2001.10a
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• pp.613-616
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• 2001

The effect of codopants on the electroluminescent properties for SrS-Ce based thin films was studied. The active layer was deposited by electron beam with sulfur The wavelength of eletroluminecence shifted with codopants and their concentrations. The intensity ratio of blue to green were found In the CeP-doped device, but the highest total intensity of luminance showed about 850cd/$m^2$ in the CeCl$_3$+KCL-doped device, which indicates that codopants are playing an important role of luminance. At any device, the luminance was the strongest at 0.2 mol% concentration among the concentration studied, suggesting the existence of optimum concentration. By post-annealing Luminance of most devices was improved, but the shift of wavelength was not observed.

• Advances in nano research
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• v.3 no.2
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• pp.81-96
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• 2015

Octahedral shaped single crystalline undoped and Ga-doped indium oxide nano-and microcrystals were fabricated using vapor-solid growth process. Effects of Ga doping on the crystallinity, defect structure, and optical properties of the nano-/microstructures have been studied using scanning electron microscopy, microRaman spectroscopy, transmission electron microscopy and cathodoluminescence spectroscopy. It has been observed that incorporation of Ga does not affect the morphology of $In_2O_3$ structures due to its smaller ionic radius, and similar oxidation state as that of In. However, incorporation of Ga in high concentration (~3.31 atom %) causes lattice compression, reduces optical band gap and defect induced CL emissions of $In_2O_3$ nano-/microcrystals. The single crystalline Ga-doped, $In_2O_3$ nano-/microcrystals with low defect contents are promising for optoelectronic applications.

• Journal of Surface Science and Engineering
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• v.29 no.5
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• pp.549-555
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• 1996

Diamond Like Carbon film is amorphous film which is considered to consist of three coordinate graphite structure and tetrahedron coordinate diamond structure. Its hardness, thermal conductivity and chemical stability are nearly to one of diamond. It is well known to become semi-conductor by doping of inpurity. In this study Diamond Like Carbon film was synthesized by Microwave Plasma CVD in the gas mixture of hydrogen-methan-nitrogen and doped of nitrogen on the single-crystal silicon or silica glass. The temperature of substrate and nitrogen concentration in the gas mixture had an effect on the bonding state, structural properties and conduction mechanism. The surface morphology was observed by Scanning Electron Microscope. The strucure was analyzed by laser Raman spectrometry. The bonding state was evaluated by electron spectroscopy. Diamond Like Carbon film synthesized was amorphous carbon containing the $sp^2$ and $sp^3$ carbon cluster. The number of $sp^2$ bonding increased as nitrogen concentration increased from 0 to 40 vol% in the feed gas at 1233K substrate temperature and at $7.4\times10^3$ Pa. Increase of nitrogen concentration made Diamond Like Carbon to be amorphous and the doze of nitragen could be controlled by nitrogen concentration of feed gas.

• Korean Journal of Materials Research
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• v.31 no.8
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• pp.445-449
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• 2021

Zintl compound Mg₃Sb₂ is a promising candidate for efficient thermoelectric material due to its small band gap energy and characteristic electron-crystal phonon-glass behavior. Furthermore, this compound enables fine tuning of carrier concentration via chemical doping for optimizing thermoelectric performance. In this study, nominal compositions of Mg_3.8Sb_2-xTe_x (0 ≤ x ≤ 0.03) are synthesized through controlled melting and subsequent vacuum hot pressing method. X-ray diffraction (XRD) and scanning electron microscopy (SEM) are carried out to investigate phase development and surface morphology during the process. It should be noted that 16 at. % of excessive Mg must be added to the system to compensate for the loss of Mg during melting process. Herein, thermoelectric properties such as Seebeck coefficient, electrical conductivity, and thermal conductivity are evaluated from low to high temperature regimes. The results show that Te substitution at Sb sites effectively tunes the majority carriers from holes to electrons, resulting in a transition from p to n-type. At 873 K, a peak ZT value of 0.27 is found for the specimen Mg_3.8Sb_1.99Te_0.01, indicating an improved ZT value over the intrinsic value.

• Journal of Ceramic Processing Research
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• v.20 no.4
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• pp.411-417
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• 2019

Graphene doped zinc oxide nanoparticles (G-ZnO) were prepared using modified hummer's technique together with the ultrasonic method and characterized by field emission scanning electron microscopy (FESEM), X-ray powder diffraction (XRD), fourier-transform infrared spectroscopy (FTIR) and high-resolution transmission electron microscopy (HRTEM). Different samples of epoxy resin nanocomposites reinforced with G-ZnO nanoparticles were prepared and were marked as F1 (without adding nanoparticles), F2 (1% w/w G-ZnO), and F3 (2% w/w G-ZnO) in combination of ≈ 56:18:18:8w/w% with epoxy resin/hardener, ammonium polyphosphate, boric acid, and Chitosan. The peak heat release rate (PHRR) of the epoxy nanocomposites was observed to decrease dramatically with the increasing G-ZnO nanoparticles. However, the LOI values increased significantly with the increase in wt % of G-ZnO nanoparticles. From the UL-94V data, it was confirmed that the F2 and F3 samples passed the flame test and were rated as V-0. The results obtained in the present work clearly revealed that the synthesized samples can be used as efficient materials in fire-retardant coating technology.