Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Influence of Fast Neutron Irradiation on the Electrical and Optical Properties of Li Doped ZnSnO Thin Film Transistor

Li 도핑된 ZnSnO 박막 트랜지스터의 전기 및 광학적 특성에 대한 고속 중성자 조사의 영향

  • Cho, In-Hwan (Advanced Materials Research Division, Korea Atomic Energy Research Institute) ;
  • Kim, Chan-Joong (Advanced Materials Research Division, Korea Atomic Energy Research Institute) ;
  • Jun, Byung-Hyuk (Advanced Materials Research Division, Korea Atomic Energy Research Institute)
  • 조인환 (한국원자력연구원 신소재융합기술연구부) ;
  • 김찬중 (한국원자력연구원 신소재융합기술연구부) ;
  • 전병혁 (한국원자력연구원 신소재융합기술연구부)
  • Received : 2019.12.11
  • Accepted : 2020.02.04
  • Published : 2020.03.27
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Abstract

The effects of fast neutron irradiation on the electrical and optical properties of Li (3 at%) doped ZnSnO (ZTO) thin films fabricated using a sol-gel process are investigated. From the results of Li-ZTO TFT characteristics according to change of neutron irradiation time, the saturation mobility is found to increase and threshold voltage values shift to a negative direction from 1,000 s neutron irradiation time. X-ray photoelectron spectroscopy analysis of the O 1s core level shows that the relative area of oxygen vacancies is almost unchanged with different irradiation times. From the results of band alignment, it is confirmed that, due to the increase of electron carrier concentration, the Fermi level (EF) of the sample irradiated for 1,000 s is located at the position closest to the conduction band minimum. The increase in electron concentration is considered by looking at the shallow band edge state under the conduction band edge formed by fast neutron irradiation of more than 1,000 s.

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