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http://dx.doi.org/10.12989/anr.2015.3.2.081

Structure and optical properties of vapor grown In2O3: Ga nano-/microcrystals  

Sanchez, Diego Leon (Facultad de Ciencias de la Electronica, Universidad Autonoma de Puebla)
Ramon, Jesus Alberto Ramos (Instituto de Fisica, Universidad Autonoma de Puebla)
Zaldivar, Manuel Herrera (Centro de Nanociencia y Nanotecnologia, Universidad Nacional Autonoma de Mexico)
Pal, Umapada (Instituto de Fisica, Universidad Autonoma de Puebla)
Rosas, Efrain Rubio (Centro Universitario de Vinculacion y Transferencia de Tecnologia (CUVyTT), Universidad Autonoma de Puebla)
Publication Information
Advances in nano research / v.3, no.2, 2015 , pp. 81-96 More about this Journal
Abstract
Octahedral shaped single crystalline undoped and Ga-doped indium oxide nano-and microcrystals were fabricated using vapor-solid growth process. Effects of Ga doping on the crystallinity, defect structure, and optical properties of the nano-/microstructures have been studied using scanning electron microscopy, microRaman spectroscopy, transmission electron microscopy and cathodoluminescence spectroscopy. It has been observed that incorporation of Ga does not affect the morphology of $In_2O_3$ structures due to its smaller ionic radius, and similar oxidation state as that of In. However, incorporation of Ga in high concentration (~3.31 atom %) causes lattice compression, reduces optical band gap and defect induced CL emissions of $In_2O_3$ nano-/microcrystals. The single crystalline Ga-doped, $In_2O_3$ nano-/microcrystals with low defect contents are promising for optoelectronic applications.
Keywords
indium oxide; vapor-solid growth; Ga-doping; optical properties;
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