• Title/Summary/Keyword: electron transition

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Low-energy interband transition effects on extended Drude model analysis of optical data of correlated electron system

  • Hwang, Jungseek
    • Progress in Superconductivity and Cryogenics
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    • v.21 no.3
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    • pp.6-12
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    • 2019
  • Extended Drude model has been used to obtain information of correlations from measured optical spectra of strongly correlated electron systems. The optical self-energy can be defined by the extended Drude model formalism. One can extract the optical self-energy and the electron-boson spectral density function from measured reflectance spectra using a well-developed usual process, which is consistent with several steps including the extended Drude model and generalized Allen's formulas. Here we used a reverse process of the usual process to investigate the extended Drude analysis when an additional low-energy interband transition is included. We considered two typical electron-boson spectral density model functions for two different (normal and d-wave superconducting) material states. Our results show that the low-energy interband transition might give significant effects on the electron-boson spectral density function obtained using the usual process. However, we expect that the low-energy interband transition can be removed from measured spectra in a proper way if the transition is well-defined or well-known.

Metal-insulator Transition in Low Dimensional $La_{0.75}Sr_{0.25}VO_3$ Thin Films

  • Huynh, Sa Hoang;Dao, Tran M.;Mondal, Partha S.;Takamura, Y.;Arenholz, E.;Lee, Jai-Chan
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.10a
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    • pp.19.1-19.1
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    • 2011
  • We report on the metal-insulator transition that occurs as a function of film thickness in ultrathin $La_{0.75}Sr_{0.25}VO_3$ films. The metal-insulator transition displays a critical thickness of 5 unit cell. Above the critical thickness, metallic films exhibit a temperature driven metal-insulator transition with weak localization behavior. With decreasing film thickness, oxygen octahedron rotation in the films increases, causing enhanced electron-electron correlation. The electron-electron correlations in ultrathin films induce the transition from metal to insulator in addition to Anderson localization.

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Effect of bounce resonance heating on Electron Energy Distribution Function in a small Inductively Coupled Plasma

  • 정진욱;서상훈;장홍영
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.208-208
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    • 1999
  • It is found that with increasing power, the measured electron energy distribution by Langmuir probe evolves into a Druyvesteyn-like electron energy distribution in the low-pressure regime of 1mTorr in a small inductively coupled plasma. Electron bounce resonance is introduced to explain the transition of the electron energy distribution against the rf power, The energy diffusion coefficients which determine the shape of the electron energy distribution in elastic range are calculated with and without electron bounce resonance. This electron energy distribution transition is well explained by the electron bounce resonance.

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The Magnetic Field Dependence of the Confinement Potential due to the Interaction of Electron and Piezoelectric Phonon in GaAs Semiconducting Materials (구속 포텐셜의 전자-압전 포논 상호 작용에 따른 GaAs의 자기장 의존 특성)

  • Lee, Su-Ho;Kim, Hai-Jai;Joo, Seok-Min
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.67 no.3
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    • pp.149-154
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    • 2018
  • We consider the system is subject to the linearly polarized oscillatory external field. We study the optical quantum transition Line shapes(QTLS) which show the absorption power and the quantum transition line widths(QTLW) of electron-piezoelectric phonon interacting system. We analyze the magnetic field dependence of the QTLS and the QTLW in various cases. In order to analysis the quantum transition, we compare the magnetic field dependence of the QTLW and the QTLS of two transition process, the intra-Landau level transition process and the inter-Landau level transition process.

Real time observation of reconstruction transition on GaAs (111)B vicinal surface by scanning electron microscopy

  • Ren, Hong-Wen;Tatau Nishinaga
    • Proceedings of the Korea Association of Crystal Growth Conference
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    • 1996.06a
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    • pp.19-37
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    • 1996
  • Scanning electron microscopy (SEM) has been applied to observe directly the {{{{ SQRT { 19} }}}}${\times}${{{{ SQRT { 19} }}}} and (1${\times}$1)HT reconstructions and the transition associated step bunching on the GaAs (111)B surfaces under As pressure. Close to the transition point, {{{{ SQRT { 19} }}}}${\times}${{{{ SQRT { 19} }}}}an d (1${\times}$1)HT reconstructions are observed in dark and bright domains by SEM and determined by micro-probe reflection high-energy electron diffraction (${\mu}$-RHEED). The reconstruction diagram shows hyster-esis. The stepped surface morphology during the reconstruction transition was unstable. Heavy step bunching with rough macrostep edges was observed.

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Cyclotron Resonance of the Wannier-Landau Transition System Based on the Ensemble Projection Technique

  • Jung-Il Park
    • Journal of the Korean Magnetic Resonance Society
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    • v.27 no.4
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    • pp.28-34
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    • 2023
  • We study the linear-nonlinear quantum transport theory of Wannier-Landau transition system in the confinement of electrons by a square well confinement potential. We use the projected Liouville equation method with the ensemble density projection technique. We select the dynamic value under a linearly oscillatory external field. We derive the dynamic value formula and the memory factor functions in three electron phonon coupling systems and electron impurity coupling systems of two transition types, the intra-band transitions and inter-band transitions. We obtain results that can be applied directly to numerical analyses. For simple example of application, we analyze the absorption power and line-widths of ZnO, through the numerical calculation of the theoretical result in the Landau system.

A simple analysis on the abnormal behavior of the argon metastable density in an inductively coupled Ar plasma

  • Park, Min;Yu, Sin-Jae;Kim, Jeong-Hyeong;Seong, Dae-Jin;Sin, Yong-Hyeon;Jang, Hong-Yeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.438-438
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    • 2010
  • The abnormal behavior of the argon metastable density during the E-H mode transition in argon ICP discharge was investigated. Lots of investigations including global models expected that during and after the mode transition of ICP discharge, the density of metastable increases with applied rf power (i.e. electron density). However, recent direct measurement of metastable density revealed that the metastable density of argon decreases with the applied power during and after the mode transition. This result may not be explained by the previous global model which is based on the assumption of the Maxwellian electron energy distribution function (EEDF). In this paper, to explain this abnormal behavior with simple manners, a simple global model taking account of the effect of the non-Maxwellian EEDFs incorporating into a set of coupled rate equations is proposed. The result showed that the calculated metastable density taking account of non-Maxwellian EEDF and its evolution during the transition has an abnormal behavior with electron density and is in good agreement with the previous measurement results, indicating the close coupling of electron kinetics and the behavior of metastable density. The proposed simple model is expected to provide qualitative kinetic insight to understand the behavior of the metastable density in various plasma discharges which typically exhibit non-Maxwellian distribution.

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Quantum Transition Properties of Quasi-Two Dimensional Si System in Electron Deformation Potential Phonon Interacting (전자 포텐셜 변형과 포논 상호작용에 의한 준 이차원 Si 구조의 전도 현상 해석)

  • Lee, Su-Ho;Kim, Young-Mun;Kim, Hai-Jai;Joo, Seok-Min
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.66 no.3
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    • pp.129-134
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    • 2017
  • We investigated theoretically the quantum optical transition properties of Si, in quasi 2-Dimensinal Landau splitting system, based on quantum transport theory. We apply the quantum transport theory (QTR) to the system in the confinement of electrons by square well confinement potential under linearly polarized oscillating field. We use the projected Liouville equation method with Equilibrium Average Projection Scheme (EAPS). In order to analyze the quantum transition, we compare the temperature and the magnetic field dependencies of the QTLW and the QTLS on four transition processes, namely, the intra-leval transition process, the inter-leval transition process, the phonon emission transition process and the phonon absorption transition process.

A Study on the Electron Transfer at the Alq3/Ba and Alq3/Au Interfaces by NEXAFS Spectroscopy (NEXAFS 분광법에 의한 Alq3/Ba과 Alq3/Au의 계면에서의 전자 천이에 관한 연구)

  • Lim, Su-Yong;Ju, Sung-Hoo;Yang, Jae-Woong
    • Journal of the Korean institute of surface engineering
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    • v.45 no.1
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    • pp.15-19
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    • 2012
  • Tris(8-quinolinolato)aluminum(III); $Alq_3$ has been frequently used as an electron transporting layer in organic light-emitting diodes. Either Ba with a low work function or Au with a high work function was deposited on $Alq_3$ layer in vacuum. And then, the behaviors of electron transition at the $Alq_3$/Ba and $Alq_3$/Au interfaces were investigated by using the near edge x-ray absorption fine structure (NEXAFS) spectroscopy. In the each interface, the energy levels of unoccupied obitals were assigned as ${\pi}^*$(LUMO, LUMO+1, LUMO+2 and LUMO+3) and ${\sigma}^*$. And the relative intensities of these peaks were investigated. In an oxygen atom composing $Alq_3$ molecule, the relative intensities for a transition from K-edge to LUMO+2 were largely increased as Ba coverage (${\Theta}_{Ba}$, 2.7 eV) with a low work function was in-situ sequentially increased on $Alq_3$ layer. In contrast, the relative intensities for the LUMO+2 peak were reduced as Au coverage (${\Theta}_{Au}$, 5.1 eV) with a high work function were increased on $Alq_3$ layer. This means that the electron transition by photon in oxygen atom which consists in the unoccupied orbitals in $Alq_3$ molecule, largely depends on work function of a metal. Meanwhile, in the case of electron transition in a carbon atom, as ${\Theta}_{Ba}$ was increased on $Alq_3$, the relative intensity from K-edge to ${\pi}_1{^*}$ (LUMO and LUMO+1) was slightly decreased, and from K-edge to ${\pi}_2{^*}$ (LUMO+2 and LUMO+3) was somewhat increased. This rising of the energy state from ${\pi}_1{^*}$ to ${\pi}_2{^*}$ exhibits that electrons provided by Ba would contribute to the process of electron transition in the $Alq_3$/Ba interfaces. As shown in above observation, the analyses of NEXAFS spectra in each interface could be important as a basic data to understand the process of electron transition by photon in pure organic materials.

The Magnetic Field Dependence Properties of Quasi Two Dimensional Electron-piezoelectric Potential Interacting System in GaN and ZnO

  • Lee, S.H.;Sug, J.Y.;Lee, J.H.;Lee, J.T.
    • Journal of Magnetics
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    • v.16 no.4
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    • pp.408-412
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    • 2011
  • We investigated theoretically the magnetic field dependence of the quantum optical transition of qusi 2-Dimensional Landau splitting system, in GaN and ZnO. We apply the Quantum Transport theory (QTR) to the system in the confinement of electrons by square well confinement potential. We use the projected Liouville equation method with Equilibrium Average Projection Scheme (EAPS). Through the analysis of this work, we found the increasing properties of the optical Quantum Transition Line Shapes(QTLSs) which show the absorption power and the Quantum Transition Line Widths(QTLWs) with the magnetic-field in GaN and ZnO. We also found that QTLW, ${\gamma}(B)_{total}$ of GaN < ${\gamma}(B)_{total}$ of ZnO in the magnetic field region B < 25 Tesla.