• Journal of the Korean Vacuum Society
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• v.17 no.6
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• pp.528-537
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• 2008

60 nm and 20 nm thick hydrogenated amorphous silicon(a-Si:H) layers were deposited on 200 nm $SiO_2$/single-Si substrates by inductively coupled plasma chemical vapor deposition(ICP-CVD). Subsequently, 30 nm-Ni layers were deposited by an e-beam evaporator. Finally, 30 nm-Ni/(60 nm and 20 nm) a-Si:H/200 nm-$SiO_2$/single-Si structures were prepared. The prepared samples were annealed by rapid thermal annealing(RTA) from $200^{\circ}C$ to $500^{\circ}C$ in $50^{\circ}C$ increments for 40 sec. A four-point tester, high resolution X-ray diffraction(HRXRD), field emission scanning electron microscopy(FE-SEM), transmission electron microscopy(TEM), and scanning probe microscopy(SPM) were used to examine the sheet resistance, phase transformation, in-plane microstructure, cross-sectional microstructure, and surface roughness, respectively. The nickel silicide from the 60 nm a-Si:H substrate showed low sheet resistance from $400^{\circ}C$ which is compatible for low temperature processing. The nickel silicide from 20 nm a-Si:H substrate showed low resistance from $300^{\circ}C$. Through HRXRD analysis, the phase transformation occurred with silicidation temperature without a-Si:H layer thickness dependence. With the result of FE-SEM and TEM, the nickel silicides from 60 nm a-Si:H substrate showed the microstructure of 60 nm-thick silicide layers with the residual silicon regime, while the ones from 20 nm a-Si:H formed 20 nm-thick uniform silicide layers. In case of SPM, the RMS value of nickel silicide layers increased as the silicidation temperature increased. Especially, the nickel silicide from 20 nm a-Si:H substrate showed the lowest RMS value of 0.75 at $300^{\circ}C$.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.4
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• pp.1-7
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• 2017

Cobalt silicide was used as a counter electrode in order to confirm its reliability in dye-sensitized solar cell (DSSC) devices. 100 nm-Co/300 nm-Si/quartz was formed by an evaporator and cobalt silicide was formed by vacuum heat treatment at $700^{\circ}C$ for 60 min to form approximately 350 nm-CoSi. This process was followed by etching in $80^{\circ}C$-30% $H_2SO_4$ to remove the cobalt residue on the cobalt silicide surface. Also, for the comparison against Pt, we prepared a 100 nm-Pt/glass counter electrode. Cobalt silicide was used for the counter electrode in order to confirm its reliability in DSSC devices and maintained for 0, 168, 336, 504, 672, and 840 hours at $80^{\circ}C$. The photovoltaic properties of the DSSCs employing cobalt silicide were confirmed by using a simulator and potentiostat. Cyclic-voltammetry, field emission scanning electron microscopy, focused ion beam scanning electron microscopy, and energy dispersive spectrometry analyses were used to confirm the catalytic activity, microstructure, and composition, respectively. The energy conversion efficiency (ECE) as a function of time and ECE of the DSSC with Pt and CoSi counter electrodes were maintained for 504 hours. However, after 672 hours, the ECEs decreased to a half of their initial values. The results of the catalytic activity analysis showed that the catalytic activities of the Pt and CoSi counter electrodes decreased to 64% and 57% of their initial values, respectively(after 840 hours). The microstructure analysis showed that the CoSi layer improved the durability in the electrolyte, but because the stress concentrates on the contact surface between the lower quartz substrate and the CoSi layer, cracks are formed locally and flaking occurs. Thus, deterioration occurs due to the residual stress built up during the silicidation of the CoSi counter electrode, so it is necessary to take measures against these residual stresses, in order to ensure the reliability of the electrode.

• Clean Technology
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• v.25 no.1
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• pp.81-90
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• 2019

A dielectric barrier discharge (DBD) plasma reactor packed with $Ni-CeO_2/{\gamma}-Al_2O_3$ catalyst was used for the dry ($CO_2$) reforming of propane (DRP) to improve the production of syngas (a mixture of $H_2$ and CO) and the catalyst stability. The plasma-catalytic DRP was carried out with either thermally or plasma-reduced $Ni-CeO_2/{\gamma}-Al_2O_3$ catalyst at a $C_3H_8/CO_2$ ratio of 1/3 and a total feed gas flow rate of $300mL\;min^{-1}$. The catalytic activities associated with the DRP were evaluated in the range of $500{\sim}600^{\circ}C$. Following the calcination in ambient air, the ${\gamma}-Al_2O_3$ impregnated with the precursor solution ($Ni(NO_3)_2$ and $Ce(NO_3)_2$) was subjected to reduction in an $H_2/Ar$ atmosphere to prepare $Ni-CeO_2/{\gamma}-Al_2O_3$ catalyst. The characteristics of the catalysts were examined using X-ray diffraction (XRD), transmission electron microscopy (TEM), field emission scanning electron microscopy (FE-SEM), energy dispersive X-ray spectrometry (EDS), temperature programmed reduction ($H_2-TPR$), temperature programmed desorption ($H_2-TPD$, $CO_2-TPD$), temperature programmed oxidation (TPO), and Raman spectroscopy. The investigation revealed that the plasma-reduced $Ni-CeO_2/{\gamma}-Al_2O_3$ catalyst exhibited superior catalytic activity for the production of syngas, compared to the thermally reduced catalyst. Besides, the plasma-reduced $Ni-CeO_2/{\gamma}-Al_2O_3$ catalyst was found to show long-term catalytic stability with respect to coke resistance that is main concern regarding the DRP process.

• Restorative Dentistry and Endodontics
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• v.31 no.2
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• pp.103-112
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• 2006

This study investigated the hypothesis that the dentin bond strength of self-etching adhesive (SEA) might be improved by applying additional layer of bonding resin that might alleviate the pH difference between the SEA and the restorative composite resin. Two SEAs were used in this study; Experimental SEA (Exp, pH: 1.96) and Adper Prompt (AP, 3M ESPE, USA, pH: 1.0) In the control groups they were applied with two sequential coats In the experimental groups, after applying the forst coat of assigned SEAs, the D/E bonding resin of All-Bond 2 (Bisco Inc., USA, pH: 6.9) was applied as the intermediate adhesive. Z-250 (3M ESPE, USA) composite resin was built-up in order to prepare hourglass-shaped specimens . The microtensile bond strength (MTBS) was measured and the effect of the Intermediate layer on the bond strength was analyzed for each SEA using t-test. The fracture mode of each specimen was inspected using stereomicroscope and Field Emission Scanning Electron Microscope (FE-SEM). When D/E bonding resin was applied as the second coat, MTBS was significantly higher than that of the control groups . The incidence of the failure between the adhesive and the composite or between the adhesive and dentin decreased and that of the failure within the adhesive layer increased. According to the results , applying the bonding resin of neutral pH can increase the bond strength of SEAs by alleviating the difference in acidity between the SEA and restorative composite resin.

• Journal of the Korean Vacuum Society
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• v.14 no.2
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• pp.78-83
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• 2005

Nanometric crystalline silicon (no-Si) embedded in dielectric medium has been paid attention as an efficient light emitting center for more than a decade. In nc-Si, excitonic electron-hole pairs are considered to attribute to radiative recombination. However the surface defects surrounding no-Si is one of non-radiative decay paths competing with the radiative band edge transition, ultimately which makes the emission efficiency of no-Si very poor. In order to passivate those defects - dangling bonds in the $Si:SiO_2$ interface, hydrogen is usually utilized. The luminescence yield from no-Si is dramatically enhanced by defect termination. However due to relatively high mobility of hydrogen in a matrix, hydrogen-terminated no-Si may no longer sustain the enhancement effect on subsequent thermal processes. Therefore instead of easily reversible hydrogen, phosphorus was introduced by ion implantation, expecting to have the same enhancement effect and to be more resistive against succeeding thermal treatments. Samples were Prepared by 400 keV Si implantation with doses of $1\times10^{17}\;Si/cm^2$ and by multi-energy Phosphorus implantation to make relatively uniform phosphorus concentration in the region where implanted Si ions are distributed. Crystalline silicon was precipitated by annealing at $1,100^{\circ}C$ for 2 hours in Ar environment and subsequent annealing were performed for an hour in Ar at a few temperature stages up to $1,000^{\circ}C$ to show improved thermal resistance. Experimental data such as enhancement effect of PL yield, decay time, peak shift for the phosphorus implanted nc-Si are shown, and the possible mechanisms are discussed as well.

• Journal of Mushroom
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• v.16 no.2
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• pp.111-117
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• 2018

This study was conducted to compare the composition and antioxidant activity of 1- and 2-year-old Poria cocos Wolf cultivated at a mortuary and cemetery. An elemental analyzer test showed oxygen, carbon, hydrogen, nitrogen, and sulfur to be present at concentrations of 45~46%, 39~41%, 6.06~6.1%, 0.21~0.22%, and 0%, respectively. No differences in composition were observed among samples. Eleven minerals (S, Ca, Mg, P, As, Se, Cu, Fe, Pb, Zn, and Cd) found in P. cocos cultivated at the mortuary and cemetery were analyzed by inductively coupled plasma mass spectrometry (ICP). The levels of S, Fe, Mg, and Zn in P. cocos were higher in cemetery-cultivated samples than in mortuary-cultivated samples. A 1,1-diphenyl-2-picrylhydrazyl (DPPH) assay for antioxidant activity revealed half-maximal inhibitory concentration ($IC_{50}$)values of P. cocos to be 8.601 mg/mL (mortuary, 1 year old), 12.85 mg/mL (cemetery, 1 year old), 1.23 mg/mL (mortuary, 2 years old), and 1.18 mg/mL (landfill, 1 year old). A 2,2'-azino-bis-3-ethylbenzothiazoline-6-sulfonic acid (ABTS) assay revealed $IC_{50}$ values of 15.85 mg/mL (mortuary, 1 year old),14.59 mg/mL(cemetery, 1 year old), 3.9 mg/mL (mortuary, 2 years old), and 14.92 mg/mL (cemetery, 1 year old). The results showed a concentration-dependent effect. Two-year-old mortuary-cultivated P. cocos had the highest antioxidant activity among samples. Ultrastructure analysis with a field emission scanning electron microscope (FE-SEM) showed no obvious differences among samples.

• Journal of the Mineralogical Society of Korea
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• v.27 no.4
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• pp.169-181
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• 2014

Korea government has consistently investigated the development of economic mineral deposits in the Tofua volcanic arc, Tonga since 2008 for the secure of sea floor mineral resources. We studied the composition and distribution of minerals formed by hydrothermal activity around TA 25 seamounts of the Tofua volcanic arc, Lau Basin, Tonga, using X-ray diffraction analysis, scanning electron microscopy, X-ray fluorescence spectrometry, and inductively coupled plasma atomic emission spectrometry. We used 7 core samples and 9 surface sediment samples. Barite, sphalerite, and clinoclase are present in the most volcanic vent area. Gypsum, smectite, and kaolin mineral are distributed in vent A area, chalcopyrite, pyrite, smectite, and kaolin mineral are in vent B and C area, and gypsum, chalcopyrite, pyrite, and goethite are in vent D area. From the study of clay fraction, smectite and few kaolinite are detected in the most studied area except inner part of caldera, which suggest that argillic alteration are dominant in the volcanic vent areas. Various sulfide or arsenide minerals were found in the hydrothermal vent B, C, and D. The mineralogy and geochemistry suggest higher hydrothermal activities in volcanic vent B, C, and D compared to vent A and inner caldera area. Therefore higher probabilities of massive sulfide deposits may occur in hydrothermal vent B, C, and D.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.4
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• pp.138-147
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• 2001

The stochiometric mixtures mixture of evaporating materials for the $ZnIn_{2}S_{4}$ single crystal thin film was prepared from horizontal furnace. To obtain the $ZnIn_{2}S_{4}$ single crystal thin film, $ZnIn_{2}S_{4}$ mixed crystal was deposited on throughly etched semi-insulting GaAs(100) in the Hot Wall Epitaxy(HWE) system. The sourceand substrate temperature were $610^{\circ}C$ and $450^{\circ}C$, respectively and the growth rate of the $ZnIn_{2}S_{4}$ single crystal thin film was about 0.5$\mu\textrm{m}$/hr. The crystalline structure of $ZnIn_{2}S_{4}$ single crystal thin film was investigated by photoluminescence and double crystal X-ray diffraction (DCXD) measurement. The carrier density and mobility of $ZnIn_{2}S_{4}$ single crystal thin film measured from Hal effect by van der Pauw method are $8.51{\times}10^{17}{\textrm}{cm}^{-3}$, 291$\textrm{cm}^2$/V.s at $293^{\circ}$K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $ZnIn_{2}S_{4}$ single crystal thin film, we have found that the values of spin orbit splitting $\Delta$So and the crystal filed splitting DCr were 0.0148eV and 0.1678 eV at $10^{\circ}$K, respectively. From the photoluminescence measurement of $ZnIn_{2}S_{4}$ single crystal thin film, we observed free excition($E_{X}$) typically observed only in high quality crystal and neutral donor bound exicton ($D^{\circ}$, X) having very strong peak intensity. The full width at half maximum and binding energy of neutral donor bound excition were 9meV and 26meV, respectively. The activation energy of impurity measured by Haynes rule was 130meV.

• The Journal of Korean Academy of Prosthodontics
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• v.52 no.3
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• pp.177-185
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• 2014

Purpose: This study is designed to investigate the various impacts of different types of scaler tips such as cooper alloy base tip and the others on the surface roughness of teeth and implant by the method which is currently in clinical use. Materials and methods: Four different types of disc shaped porcelain, titanium, zirconia, and Type III gold alloy dental materials sized 15 mm diameter, 1.5 mm thickness were used for the experiment. Plastic hand curette (Group PS), cooper alloy new tip (Group IS), and stainless steel tip (Group SS) were used as testing appliances. A total of 64 specimens were used for this study; Four specimens for each material and appliance group. Surface roughness was formed with 15 degree angle in ultrasonic scaler tip and with 45 degree angle in hand curette of instrument tip and the specimen surface with 5 mm long, one horizontal-reciprocating motion per second for 30 seconds by 40 g force. To survey the surface roughness of each specimen, a field emission scanning electron microscope, an atomic force microscope, and a surface profiler were used. (Ra, ${\mu}m$). Results: According to SEM, most increased surface roughness was observed in SS group while IS groups had minimal roughness change. Measurement by atomic force microscope presented that the surface roughness of SS group was significantly greater than those of PS, IS and control groups in the type III gold alloy group (P<.05). IS group showed lesser surface roughness changes compared to SS group in porcelain and gold alloy group (P<.05). According to surface profiler, surface roughness of SS group showed greater than those of PS, IS and control groups and IS group showed lesser than those of SS group in all specimen groups. Type III gold alloy group had large changes on surface roughness than those of porcelain, titanium, zirconia (P<.05). Conclusion: The result of this study showed that newly developed copper alloy scaler tip can cause minimal roughness impacts on the surface of implant and dental materials; therefore this may be a useful alternative for prophylaxis of implant and restored teeth.

• Journal of dental hygiene science
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• v.10 no.3
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• pp.177-183
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• 2010

This study was begun to search effect of contact angles of elastic rubber impression materials on the surface of working cast. Of elastic rubber impression materials with a Type III consistency, such as polysulfide, polyether and addition silicone, we selected one and then measured the contact angle after dripping a distilled water 3.3ml. Then, after pouring a dental anhydrite in three types of impression materials, we prepared a working cast and then examined its surface. Contact angle was measured using a full automatic contact angle measuring system (DM-700, KYOWA, Japan), and the surface of working cast was observed using a field emission scanning electron microscope (JSM-6700F, JEOL Ltd., JAPAN). The following results were obtained: 1) $Mean{\pm}SD$ (SD: standard deviation) of the initial contact angles were $91.3{\pm}20.5^{\circ}$ in the addition silicone materials, $90.0{\pm}2.2^{\circ}$ in the polyethers and $101.5{\pm}2.3^{\circ}$ in the polysulfides. These results indicate that mean values were similar but standard deviations of the three materials showed a great discrepancy. 2) As the time elapsed, addition silicone materials were found to have a contact angle decreased abruptly as compared with the remaining two types. That is, the initial contact angle was $91.3^{\circ}$ and it was abruptly decreased to $29.4^{\circ}$ after 25 seconds. 3) In the polyethers, the initial contact angle was $101.5^{\circ}$ and it was decreased to $90.7^{\circ}$ after 25 seconds. In the polysulfides, however, the initial contact angle was $90.0^{\circ}$ and it was $84.2^{\circ}$ after 25 seconds. This showed almost no changes in the initial contact angles. Moreover, its magnitude was greater than that seen in additional silicones. 4) There were significant differences in the contact angles between the three types of elastic rubber impression materials as the time elapsed (p<0.001). On an observation on the surface of working cast, addition silicone materials were found to have the most dense surface. This was followed by polysulfides and polyethers in a descending order.