• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권9호
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• pp.371-377
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• 2003

We perform the physical analysis such that Si/W composition ratios and phosphorus distribution change in the W/S $i_{x}$ thin films according to phosphorus concentration of polysilicon and W $F_{6}$ flow rate for the formation of WS $i_{x}$ polycide used as a gate electrode. We report that these physical characteristics have effects on the contact resistance between word line and bit line in DRAM devices. RBS measurements show that for the samples having phosphorus concentrations of 4.75 and 6.0${\times}$10$^{2-}$ atoms/㎤ in polysilicon, by applying W $F_{6}$ flow rates decreases from 4.5 to 3.5 sccm, Si/W composition ratio has increases to 2.05∼2.24 and 2.01∼2.19, respectively. SIMS analysis give that phosphorus concentration of polysilicon for both samples have decreases after annealing, but phosphorus concentration of WS $i_{x}$ thin film has increases by applying W $F_{6}$ flow rates decreases from 4.5 to 3.5 sccm. The contact resistance between word line and bit line in the sample with phosphorus concentration of 6.0 ${\times}$ 10$^{20}$ atoms/㎤ in polysilicon is lower than the sample with 4.75 ${\times}$ 10$^{20}$ atoms/㎤ After applying W $F_{6}$ flow rates decreases from 4.5 to 3.5 sccm, the contact resistance has been improved dramatically from 10.1 to 2.3 $\mu$ $\Omega$-$\textrm{cm}^2$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.160-160
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• 2010

In this work, we investigate ohmic contacts to p-type GaN using a Pt/Cu/Au metallization scheme in order to achieve low resistance and thermally stable ohmic contact on p-GaN. An ohmic contact formed by a metal electrode deposited on a highly doped InGaN/GaN superlattice sturucture on p-GaN layer. The specific contact resistance is $1.56{\times}10^{-6}{\Omega}cm^2$ for the as-deposited sample, $1.35{\times}10^{-4}{\Omega}cm^2$ for the sample annealed at $250^{\circ}C$ and $6.88{\times}10^{-3}{\Omega}cm^2$ for the sample annealed at $300^{\circ}C$.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 추계학술대회 초록집
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• pp.53.2-53.2
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• 2010

In this study, we focused on our specialized electrode process for Si back-contact crystalline solar cell. It is different from other well-known back-contact cell process for thermal aspect and specialized process. In general, aluminum makes ohmic contact to the Si wafer and acts as a back surface reflector. And, silver is used for low series resistance metal grid lines. Aluminum was sputtered onto back side of wafer. Next, silver is directly patterned on the wafer by screen printing. The sputtered aluminum was removed by wet etching process after rear silver electrode was formed. In this process, the silver paste must have good printability, electrical property and adhesion strength, before and after the aluminum etching process. Silver paste also needs low temperature firing characteristics to reduce the thermal budget. So it was seriously collected by the products of several company of regarding low temperature firing (below $250^{\circ}C$) and aluminum etching endurance. First of all, silver pastes for etching selectivity were selected to evaluate as low temperature firing condition, electrical properties and adhesive strength. Using the nano- and micron-sized silver paste, so called hybrid type, made low temperature firing. So we could minimize the thermal budget in metallization process. Also the adhesion property greatly depended on the composition of paste, especially added resin and inorganic additives. In this paper, we will show that the metallization process of back-contact solar cell was realized as optimized nano-paste characteristics.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2012년도 춘계학술발표대회
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• pp.67.1-67.1
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• 2012

Graphene has attracted much attention for future nanoelectronics due to its superior electrical properties. Owing to its extremely high carrier mobility and controllable carrier density, graphene is a promising material for practical applications, particularly as a channel layer of high-speed FET. Furthermore, the planar form of graphene is compatible with the conventional top-down CMOS fabrication processes and large-scale synthesis by chemical vapor deposition (CVD) process is also feasible. Despite these promising characteristics of graphene, much work must still be done in order to successfully develop graphene FET. One of the key issues is the process technique for gate dielectric formation because the channel mobility of graphene FET is drastically affected by the gate dielectric interface quality. Formation of high quality gate dielectric on graphene is still a challenging. Dirac voltage, the charge neutral point of the device, also strongly depends on gate dielectrics. Another performance killer in graphene FET is source/drain contact resistance, as the contact resistant between metal and graphene S/D is usually one order of magnitude higher than that between metal and silicon S/D. In this presentation, the key issues on graphene-based FET, including organic-inorganic hybrid gate dielectric formation, controlling of Dirac voltage, reduction of source/drain contact resistance, device structure optimization, graphene gate electrode for improvement of gate dielectric reliability, and CVD graphene transfer process issues are addressed.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1361-1363
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• 2005

In this paper, we report on the performance stability of solution processible OTFT devices with Au/Ti and ITO source-drain (S/D) electrodes. It appears that the contact resistance of the S/D electrode strongly affects the stability of OTFT devices. Interestingly, the devices with the Au/Ti electrode showed lower mobility than those with the ITO (S/D) devices. The field effect mobilities of the devices with the Au/Ti and ITO electrodes were 0.06, and $0.44cm^2/Vs$, respectively. However, the mobility of the device with the Au/Ti electrode was increased up to $0.26cm^2/Vs$ after 2 weeks, while the mobility of the device with ITO electrode was slightly decreased down to $0.41cm^2/Vs$. The experimental data show us that ITO could be used as the S/D electrode for low-cost OTFT devices.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.571-574
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• 2009

Metal oxide/metal bilayer structures are explored as contacts with a low injection barrier in organic thin-film transistors (OTFTs) in an effort to realize their true potential for low-cost electronics. OTFTs with a bilayer electrode of $WO_3$ (10nm) and Al shows a saturation mobility as large as 0.97 $cm^2$/Vsec which are comparable to those of Au-based control samples (~0.90 $cm^2$/Vsec). Scaling of contact resistance with respect to the thickness of $WO_3$ layer is also discussed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.275-275
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• 2007

Two sorts of electrode composed of Sulpur/CNT/PVDF and Silver/CNT/PVDF were prepared by in situ chemical method and their electrochemical performance were evaluated by using cyclic voltammetry, impedance measurement and constant-current charge/discharge cycling technique. Also, composite electrodes were characterized by FE-SEM and BET. Raw materials such as CNT/Silver and CNT/Sulfur were mixed in ethanol, dried. These mixed materials were heated at 900 and $320^{\circ}C$ for 2hr, respectively in order to enhance contact among CNT electrodes. Electric double layer capacitor cells were fabricated using these mixed powder with polymer of PVDF. For the charging and discharging characteristics measured at scan rate of 1 mA/s, Supercapacitor of Sulphur-CNT-PVDF electrode showed a better performance than that of Ag-CNT-PVDF, which seems to be related with lower contact resistance of Sulphur-CNT-PVDF electrode.

• 한국조명전기설비학회지:조명전기설비
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• 제1권2호
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• pp.62-69
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• 1987

이 논문은 Phenolic 수지의 Tracking파괴의 CTI에 관한 고찰로써 전극재료의 일부가 누설재료에 의하여 침식되기 때문에 tracking파괴를 증진시키며 다음과 같은 영향을 받는다. $\circled1$절연재료에서는 C. T. I의 값이 350정도에서는 현재까지 규정하고 있는 백금전극보다도 황동전극이 더욱 근사한 값을 얻을 수 있었다. $\circled2$C. T. I의 값은 전해액의 저항율과는 무관하다. $\circled3$시요표면의 접촉각이 증가함에 따라 Corona 개시전압과 C. T. I의 값은 증가한다.

• 한국분말재료학회지
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• 제25권6호
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• pp.507-513
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• 2018

This study investigates the viability of using a Na-ion battery with a tin(Sn) anode to mitigate the vulnerability caused by volume changes during discharge and charge cycling. In general, the volume changes of carbon material do not cause any instability during intercalation into its layer structure. Sn has a high theoretical capacity of $847mAh\;g^{-1}$. However, it expands dramatically in the discharge process by alloying Na-Sn, placing the electrode under massive internal stress, and particularly straining the binder over the elastic limit. The repeating strain results in loss of active material and its electric contact, as well as capacity decrease. This paper expands the scope of fabrication of Na-ion batteries with Sn by fabricating the binder as an auxetic structure with a unique feature: a negative Poisson ratio (NPR), which increases the resistance to internal stress in the Na-Sn alloying/de-alloying processes. Electrochemical tests and micrograph images of auxetic and common binders are used to compare dimensional and structural differences. Results show that the capacity of an auxetic-structured Sn electrode is much larger than that of a Sn electrode with a common-structured binder. Furthermore, using an auxetic structured Sn electrode, stability in discharge and charge cycling is obtained.

• Bulletin of the Korean Chemical Society
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• 제35권12호
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• pp.3553-3558
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• 2014

The reduced graphene oxide(rGO)/aluminum phosphate($AlPO_4$)-coated $LiMn_{1.5}Ni_{0.5}O_4$ (LMNO) cathode material has been developed by hydroxide precursor method for LMNO and by a facile solution based process for the coating with GO/$AlPO_4$ on the surface of LMNO, followed by annealing process. The amount of $AlPO_4$ has been varied from 0.5 wt % to 1.0 wt %, while the amount of rGO is maintained at 1.0 wt %. The samples have been characterized by X-ray diffraction, scanning electron microscopy, and high-resolution transmission electron microscopy. The rGO/$AlPO_4$-coated LMNO electrodes exhibit better cyclic performance compared to that of pristine LMNO electrode. Specifically, rGO(1%)/$AlPO_4$(0.5%)- and rGO(1%)/$AlPO_4$(1%)-coated electrodes deliver a discharge capacity of, respectively, $123mAhg^{-1}$ and $122mAhg^{-1}$ at C/6 rate, with a capacity retention of, respectively, 96% and 98% at 100 cycles. Furthermore, the surface-modified LMNO electrodes demonstrate higher-rate capability. The rGO(1%)/$AlPO_4$(0.5%)-coated LMNO electrode shows the highest rate performance demonstrating a capacity retention of 91% at 10 C rate. The enhanced electrochemical performance can be attributed to (1) the suppression of the direct contact of electrode surface with the electrolyte, resulting in side reactions with the electrolyte due to the high cut-off voltage, and (2) smaller surface resistance and charge transfer resistance, which is confirmed by total polarization resistance and electrochemical impedance spectroscopy.