Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Characteristics of p-InGaN/GaN Superlattice structure of the p-GaN according to annealing conditions

p-InGaN/GaN 초격자구조에서 열처리 조건에 따른 오믹전극의 특성

  • Jang, Seon-Ho (Yeungnam University & LED-IT FusionTechnology Research Center) ;
  • Kim, Sei-Min (Yeungnam University & LED-IT FusionTechnology Research Center) ;
  • Lee, Young-Woong (Yeungnam University & LED-IT FusionTechnology Research Center) ;
  • Lee, Young-Seok (Yeungnam University & LED-IT FusionTechnology Research Center) ;
  • Lee, Jong-Seon (Yeungnam University & LED-IT FusionTechnology Research Center) ;
  • Park, Min-Jung (Yeungnam University & LED-IT FusionTechnology Research Center) ;
  • Park, Il-Kyu (Yeungnam University & LED-IT FusionTechnology Research Center) ;
  • Jang, Ja-Soon (Yeungnam University & LED-IT FusionTechnology Research Center)
  • 장선호 (영남대학교 & LED-IT 융합산업화연구센터) ;
  • 김세민 (영남대학교 & LED-IT 융합산업화연구센터) ;
  • 이영웅 (영남대학교 & LED-IT 융합산업화연구센터) ;
  • 이영석 (영남대학교 & LED-IT 융합산업화연구센터) ;
  • 이종선 (영남대학교 & LED-IT 융합산업화연구센터) ;
  • 박민정 (영남대학교 & LED-IT 융합산업화연구센터) ;
  • 박일규 (영남대학교 & LED-IT 융합산업화연구센터) ;
  • 장자순 (영남대학교 & LED-IT 융합산업화연구센터)
  • Published : 2010.06.16
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Abstract

In this work, we investigate ohmic contacts to p-type GaN using a Pt/Cu/Au metallization scheme in order to achieve low resistance and thermally stable ohmic contact on p-GaN. An ohmic contact formed by a metal electrode deposited on a highly doped InGaN/GaN superlattice sturucture on p-GaN layer. The specific contact resistance is $1.56{\times}10^{-6}{\Omega}cm^2$ for the as-deposited sample, $1.35{\times}10^{-4}{\Omega}cm^2$ for the sample annealed at $250^{\circ}C$ and $6.88{\times}10^{-3}{\Omega}cm^2$ for the sample annealed at $300^{\circ}C$.

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