• Title/Summary/Keyword: electrode array

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Fabrication and Growth Behavior of TiO2 Nanotube Arrays by Anodic Oxidation Method (양극산화법에 의한 TiO2 나노튜브 어레이의 제조와 성장거동)

  • Kim, Seon-Min;Kim, Ki-Won;Ryu, Kwang-Sun;Kim, Yoo-Young;Cho, Kwon-Koo
    • Journal of Powder Materials
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    • v.18 no.1
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    • pp.56-63
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    • 2011
  • Recently, $TiO_2$ nanotubes have considerably researched because of their novel application about photocatalysis, dye-sensitized solar cells (DSSCs), lithium ion battery, etc. In this work, self-standing $TiO_2$ nanotube arrays were fabricated by anodic oxidation method using pure Ti foil as a working electrode in ethylene glycole with 0.3M $NH_4F$ + $2%H_2O$. Growth behavior of $TiO_2$ nanotube arrays was compared according to temperature, voltage and time. The morphology, structure and crystalline of anodized $TiO_2$ nanotube arrays were observed by FE-SEM (field emission scanning electron microscope) and XRD (X-ray diffraction).

Highly Conductive and Transparent Electrodes for the Application of AM-OLED Display

  • Ryu, Min-Ki;Kopark, Sang-Hee;Hwang, Chi-Sun;Shin, Jae-Heon;Cheong, Woo-Seok;Cho, Doo-Hee;Yang, Shin-Hyuk;Byun, Chun-Won;Lee, Jeong-Ik;Chung, Sung-Mook;Yoon, Sung-Min;Chu, Hye-Yong;Cho, Kyoung-Ik
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.813-815
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    • 2008
  • We prepared highly transparent and conductive Oxide/Metal/Oxide(OMO) multilayer by sputtering and developed wet etching process of OMO with a clear edge shape for the first time. The transmittance and sheet-resistance of the OMO are about 89% and $3.3\;{\Omega}/sq.$, respectively. We adopted OMO as a gate electrode of transparent TFT (TTFT) array and integrated OLED on top of the TTFT to result in high aperture ratio of bottom emission AM-OLED.

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Performance Analysis of Various Forward Solvers in Electrical Impedance Tomography (전기 임피던스 단층촬영 기법에서 여러 정문제 해법들에 대한 성능 비교분석)

  • Kim, Bong Seok;Kim, Kyung Youn
    • Journal of IKEEE
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    • v.19 no.3
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    • pp.407-414
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    • 2015
  • Electrical impedance tomography is an imaging technique to reconstruct the internal conductivity distribution based on applied small currents and measured voltages through an array of electrodes attached on the boundary of a domain of interest. In this paper, an analytical solver with complete electrode model is derived and the analytical voltage data are calculated. Moreover, the voltage data are also computed with existing numerical solvers such as finite element method and boundary element method. The forward solutions using homogeneous and inhomogeneous conditions are compared with phantom experiments through the root mean square errors.

Organic Thin-Film Transistors Fabricated on Flexible Substrate by Using Nanotransfer Molding

  • Hwang, Jae-Kwon;Dang, Jeong-Mi;Sung, Myung-Mo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.287-287
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    • 2010
  • We report a new direct patterning method, called liquid bridge-mediated nanotransfer molding (LB-nTM), for the formation of two- or three-dimensional structures with feature sizes between tens of nanometers and tens of micron over large areas. LB-nTM is based on the direct transfer of various materials from a mold to a substrate via a liquid bridge between them. This procedure can be adopted for automated direct printing machines that generate patterns of functional materials with a wide range of feature sizes on diverse substrates. Arrays of TIPS-PEN TFTs were fabricated on 4" polyethersulfone (PES) substrates by LB-nTM using PDMS molds. An inverted staggered structure was employed in the TFT device fabrication. A 150 nm-thick indium-tin oxide (ITO) gate electrode and a 200 nm-thick SiO2dielectric layer were formed on a PES substrate by sputter deposition. An array of TIPS-PEN patterns (thickness: 60 nm) as active channel layers was fabricated on the substrate by LB-nTM. The nominal channel length of the TIPS-PEN TFT was 10 mm, while the channel width was 135 mm. Finally, the source and drain electrodes of 200 nm-thick Ag were defined on the substrate by LB-nTM. The TIPS-PEN TFTs can endure strenuous bending and are also transparent in the visible range, and therefore potentially useful for flexible and invisible electronics.

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A Comparison between J0 and J1 Digital Linear Filters in Resistivity Soundings (비저항탐사에서 J0 및 J1 디지탈 선형필터의 비교)

  • Kim, Hee Joon
    • Economic and Environmental Geology
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    • v.18 no.1
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    • pp.41-47
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    • 1985
  • The filtering ability of $J_0$ and $J_1$ digital linear filters is compared by means of an adaptive linear filter. Any $J_0$ domain Hankel transform integral can be transformed mathematically into its corresponding $J_1$ domain integral. The apparent resistivities for any electrode configuration employed in resistivity soundings can be evaluated with a single $J_1$ filter. The $J_1$ filter usually has similar accuracy to, but shorter length than, the corresponding $J_0$ filter. The domain transformation from $J_0$ to $J_1$ enables us to use effective expressions of apparent resistivity, involving $J_1$ alone, not only for Schlumberger but also for dipole-dipole array.

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Electrical Resistivity Survey on the Geolgical Structure of the Bonghwajae Area in the Okchon Zone (옥천대(沃川帶)의 지질(地質) 및 광물자원(鑛物資原)에 관(關)한 연구(硏究) -봉화재 지역(地域)에 대(對)한 전기비저항탐사(電氣比抵抗探査)-)

  • Min, Kyung Duck;Kim, Chang Ryol;Yun, Chun Sung;Chung, Seung Hwan
    • Economic and Environmental Geology
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    • v.21 no.2
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    • pp.131-137
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    • 1988
  • Geological and electrical resistivity surveys were carried out to investigate subsurface geology and geologic structure of the Bonghwajae area in the Okchon zone. Pseudosections of the apparent electrical resistivity distribution along the three survey lines were obtained by using dipole-dipole electrode array method, and models of subsurface geology and geologic structure by using two dimensional finite difference method. The Bonghwajae fault zone exists around Bonghwajae area in the north-south direction, and is a boundary between Okchon Group and Choson Supper Group. Metabasite and hornblende gabbro intruded along the Bonghwajae fault zone remaining two fracture zones with low resistivity value of 20 ohm-m and widths of about 100m and 70-300m. They strike nearly N-S and dip westward with a high angle of $60-70^{\circ}$. Sochangri fault with a width of about 160m exists between Jisogori and Bonghwajae, by which Bonghwajae fault zone is displaced about 1km in the east-west direction. Hornblende gabbro whose electrical resistivity value is in the range of 5000-8000 ohm-m intruded the metabasite of 2000-4500 ohm-m after the Sochangri fault had formed. Great Limestone Group is widely distributed in the east of Bonghwajae fault zone, and interbeds so called Yongam formation of graphitic black slate with an extremely low electrical resistivity value of 2 ohm-m.

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Hydrodynamic Effect on the Inhibition for the Flow Accelerated Corrosion of an Elbow

  • Zeng, L.;Zhang, G.A.;Guo, X.P.
    • Corrosion Science and Technology
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    • v.16 no.1
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    • pp.23-30
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    • 2017
  • The inhibition effect of thioureido imidazoline inhibitor (TAI) for flow accelerated corrosion (FAC) at different locations for an X65 carbon steel elbow was studied by array electrode and computational fluid dynamics (CFD) simulations. The distribution of the inhibition efficiency measured by electrochemical impedance spectroscopy (EIS) is in good accordance with the distribution of the hydrodynamic parameters at the elbow. The inhibition efficiencies at the outer wall are higher than those at the inner wall meaning that the lower inhibition efficiency is associated with a higher flow velocity, shear stress, and turbulent kinetic energy at the inner wall of the elbow, as well as secondary flow at the elbow rather than the mass transport of inhibitor molecules. Compared to the static condition, the inhibition efficiency of TAI for FAC was relatively low. It is also due to a drastic turbulence flow and high wall shear stress during the FAC test, which prevents the adsorption of inhibitor and/or damages the adsorbed inhibitor film.

Direct Determination of Uric Acid in Human Serum Samples Using Polypyrrole Nanoelectrode Ensembles

  • Yang, Guangming;Tan, Lin;Shi, Ya;Wang, Suiping;Lu, Xuxiao;Bai, Huiping;Yang, Yunhui
    • Bulletin of the Korean Chemical Society
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    • v.30 no.2
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    • pp.454-458
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    • 2009
  • Polypyrrole (PPy) nanotubes have been synthesized by chemical oxidative polymerization of pyrrole within the pores of polycarbonate membrane using the technology of diffusion of solutes. The nanotubes array prepared by the proposed method can be considered as nanoelectrode ensembles (NEEs). An amperometric uric acid sensor based on PPy NEEs has been developed and used for determination of uric acid in human serum samples. The electrode can direct response to uric acid at potential of 0.60V vs. SCE with wide linear range of $1.52{\times}10^{-6}\;to\;1.54{\times}10^{-3}\;M.\;The\;detection\;limit\;is \;3.02{\times}10^{-7}$ M. This sensor has been used to determine uric acid in real serum samples. PPy NEEs is thought of as a good application in the foreground.

One-Dimensional Core/Shell Structured TiO2/ZnO Heterojunction for Improved Photoelectrochemical Performance

  • Ji, In-Ae;Park, Min-Joon;Jung, Jin-Young;Choi, Mi-Jin;Lee, Yong-Woo;Lee, Jung-Ho;Bang, Jin-Ho
    • Bulletin of the Korean Chemical Society
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    • v.33 no.7
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    • pp.2200-2206
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    • 2012
  • One-dimensional $TiO_2$ array grown on optically transparent electrode holds a promise as a photoelectrode for photoelectrochemical water splitting; however, its crystal structure is rutile, imposing constraints on the potent use of this nanostructure. To address this issue, a heterojunction with type-II band alignment was fabricated using atomic layer deposition (ALD) technique. One-dimensional core/shell structured $TiO_2$/ZnO heterojunction was superior to $TiO_2$ in the photoelectrochemical water splitting because of better charge separation and more favorable Fermi level. The heterojunction also possesses better light scattering property, which turned out to be beneficial even for improving the photoelectrochemical performance of semiconductor-sensitized solar cell.

Seperate Driving System For Large Area X-ray Detector In Radiology (대면적 X-ray 검출기를 위한 분할 구동 시스템)

  • Lee, D.G.;Park, J.K.;Kim, D.H.;Nam, S.H.;Ahn, S.H.;Park, H.D.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.11a
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    • pp.388-391
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    • 2003
  • The properties of these detectors can be controlled by electronics and exposure conditions. Flat-panel detectors for digital diagnostic imaging convert incident x-ray images to charge images. Flat panel detectors gain more interest real time medical x-ray imaging. Active area of flat panel detector is $14{\times}17$ inch. Detector is based on a $2560{\times}3072$ away of photoconductor and TFT pixels. X-ray conversion layer is deposited upper TFT array flat panel with a 500m by thermal deposition technology. Thickness uniformity of this layer is made of thickness control technology(5%) of thermal deposition system. Each $139m{\times}139m$ pixel is made of thin film transistor technology, a storage capacitor and charge collection electrode having geometrical fill factor of 86%. Using the separate driving system of two dimensional mosaic modules for large area, that is able to 4.2 second per frame. Imaging performance is suited for digital radiography imaging substitute by conventional radiography film system..

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