• Journal of the Korean Society of Industry Convergence
• /
• v.5 no.1
• /
• pp.39-43
• /
• 2002

In present much CMOS devices used in VLSI circuit and Logic circuit. With increasing a number of device in VLSI, the confidence becomes more serious. This paper describe the mechanism of breakdown on CMOS, especially n-MOS, based on Hydro Dynamic model with device self-heating. Additionally, illustrate the CMOS latch-up characteristics on simplified device structure on this paper.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1997.04a
• /
• pp.154-159
• /
• 1997

This paper describes the electron transport characteristic in SiH$_4$ gas calculated for range of E/N values from 0.5~300(Td) by the Monte Calro simulation and Boltzmann equation method using a set of electron collision cross sections determined by the authors and the values of electron swarm parameters are obtained for TOF method. The results gained that the value of an electron swarm parameter such as the electron drift velocity, the electron ionization coefficients longitudinal and transverse diffusion coefficients, characteristics energy agree with thee experimental and theoretical for a range of E/N. The electron energy distributions function were analysed in monosilane at EN : 30, 50(Td) for a case of equilibrium region in the mean electron energy. The validity of the results obtained has been confirmed by a TOF method.

• Journal of IKEEE
• /
• v.17 no.3
• /
• pp.360-364
• /
• 2013

The maximum breakdown voltage's characteristic within the Super Junction MOSFET structure comes from N-Drift and P-Pillar's charge balance. By developing P-Pillar from Planar MOSFET, it was confirmed that the breakdown voltage is improved through charge balance, and by setting the gate voltage at 10V, the characteristic comparisons of Planar MOSFET and Super Junction MOSFET are shown in picture 6. The results show that it had the same breakdown voltage as Planar MOSFET which increased temperature resistance by 87.4% at $.019{\Omega}cm^2$ which shows that by the temperature resistance increasing, the power module's power dissipation improved.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11b
• /
• pp.613-616
• /
• 2001

This SF6 gas is widely used in industrial of insulation field. In this paper, N2 is mixed to improve pure SF6 gas characteristics. Electron transport coefficients in SF6-N2 mixture gases are simulated in range of E/N values from 70 to 400 [Td] at 300K and 1 Torr by using Boltzmann equation method. The results of this method, which are like electron drift velocity, ionization coefficient, attachment coefficient, effective ionization coefficient, and critical EIN, can be important data to present characteristic of gas for insulation. Specially critical E/N is a data to evaluate insulation strength of a gas and is presented in this paper for various mixture ratios of SF6-N2 mixture gases.?⨀␍?܀㘱〮㜳㬓M敤楣楮攠慮搠桥污瑨

• Proceedings of the KIEE Conference
• /
• 1997.07e
• /
• pp.1830-1833
• /
• 1997

This paper describes the electron transport characteristic in $SiH_4$ gas calculated for range of E/N values from $0.5{\sim}300$(Td) using a set of electron collision cross sections determined by the authors and the values of electron swarm parameters are obtained for TOF method. The results gained that the value of an electron swarm parameter such as the electron drift velocity, longitudinal and transverse diffusion coefficients with the experimental and theoretical for a range of E/N. The electron energy distributions function were analysed in monosilane at E/N : 30, 50(Td) for a case of equilibrium region in the mean electron energy. The validity of the results obtained has been confirmed by a TOF method.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.27 no.2
• /
• pp.71-75
• /
• 2014

To observe the optical characteristic of oxide semiconductor depending on the degree of bonding structures, SiOC, ZnO and IGZO were prepared by the RF magnetron sputter system and chemical vapor deposition. Generally, crystal ZnO, amorphous SiOC and IGZO changed the optical characteristics in according to the electro-chemical behavior due to the oxygen vacancy at an interface between different groups. Transmittance of SiOC and IGZO with amorphous structures was higher than that of ZnO with crystal structure, because of lowering the carrier concentration due to the recombination of electron and holes carriers as oxygen vacancies. Besides, the energy gap of amorphous SiOC and IGZO was higher than the energy gap of crystal ZnO. The diffusion mobility of holes is higher than the drift mobility of electrons.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11a
• /
• pp.613-616
• /
• 2001

This $SF_{6}$ gas is widely used in industrial of insulation field. In this paper, $N_2$ is mixed to improve pure $SF_{6}$ gas characteristics. Electron transport coefficients in $SF_{6}$-$N_2$ mixture gases are simulated in range of E/N values from 70 to 400 [Td] at 300K and 1 Torr by using Boltzmann equation method. The results of this method, which are like electron drift velocity, ionization coefficient, attachment coefficient, effective ionization coefficient, and critical E/N, can be important data to present characteristic of gas for insulation. Specially critical E/N is a data to evaluate insulation strength of a gas and is presented in this paper for various mixture ratios of $SF_{6}$-$N_2$ mixture gases.

• Journal of the Korean GEO-environmental Society
• /
• v.10 no.2
• /
• pp.69-76
• /
• 2009

In this study, design method for debris flow and drift wood dams used in Japan was evaluated to develop currently available design method practiced in Korea. In Japan, represented a similarity in the aspects of topography and the climate compared with Korea, casualties due to debris flow, landslide, and collapse of cliff as well as earthquake, have been reported every year. Especially, debris flow had often occurred during heavy rainy season rather than due to Typhoons or localized torrential thunderstorms. Since the characteristic of the debris flow reveals in the middle of water flow and soil behaviors, the behavior of debris flow associated with drift wood was not fully understood at this moment and therefore empirical design method to design debris flow dam is adopted in the practice and currently used in Japan. Based on the result of this study, modification of debris flow design method used in Korea are presented.

• Journal of the Korean Institute of Telematics and Electronics T
• /
• v.35T no.1
• /
• pp.48-58
• /
• 1998

For the purpose of designing novel capacitance pressure sensor, several effects on sensitivity such as parasitic capacitance effects, temperature/thermal drift and leakage current have to be eleiminated. This paper proposed the experimental studies on frequency compensation method by electronic circuit technique, C-V converting method with switched capacitor and C-F converting method with schmitt trigger circuit. The third interface circuit by frequency compensation method is composed to eliminate the drift and leakage component by comparision sensing frequency with reference frequency. The signal transmission is realized by digital signal to minimize the influence of noise and high resolution is obtained by means of increasing the number of digital bits. In the fabricated high performance C-V interface, the offset voltage was not appeared, and in case of voltage source, 4.0V, feed back capacitance, 10㎊, the pressure, 0~10 ㎪, the sensitivity of C-V converter is 28 ㎷/㎪.V, the temperature drift characteristic, 0.051 %F.S./$^{\circ}C$ and C-F converter shows -6.6 Hz/pa, 0.078 %F.S./$^{\circ}C$ respectively, relatively good ones.

• Journal of Digital Contents Society
• /
• v.18 no.6
• /
• pp.1193-1198
• /
• 2017

The IGBT structure developed in this paper is used as a high power switch semiconductor for DC transmission and distribution and it is expected that it will be used as an important electronic device for new and long distance DC transmission in the future by securing fast switching speed and improved breakdown voltage characteristic. As a new type of next generation power semiconductors, it is designed to improve the switching speed while at the same time improving the breakdown voltage characteristics, reducing power loss characteristics, and achieving high current density advantages at the same time. These improved properties were obtained by further introducing SiO2 into the N-drift region of the Planar IGBT and were compared and analyzed using the Sentaurus TCAD simulation tool.