• Title/Summary/Keyword: drain thermal noise

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Analytical Thermal Noise Model of Deep-submicron MOSFETs

  • Shin, Hyung-Cheol;Kim, Se-Young;Jeon, Jong-Wook
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.6 no.3
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    • pp.206-209
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    • 2006
  • This paper presents an analytical noise model for the drain thermal noise, the induced gate noise, and their correlation coefficient in deep-submicron MOSFETs, which is valid in both linear region and saturation region. The impedance field method was used to calculate the external drain thermal noise current. The effect of channel length modulation was included in the analytical equation. The noise behavior of MOSFETs with decreasing channel length was successfully predicted from our model.

Extraction and Analysis of Dual Gate FET Noise Parameter for High Frequency Modeling (고주파모델링을 위한 이중게이트 FET의 열잡음 파라미터 추출과 분석)

  • Kim, Gue-Chol
    • The Journal of the Korea institute of electronic communication sciences
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    • v.8 no.11
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    • pp.1633-1640
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    • 2013
  • In this paper, noise parameters for high frequency modeling of dual-gate FET are extracted and analyzed. To extract thermal noise parameter of dual gate, noise characteristics are measured by changing input impedance of noise source using Tuner, and the influence of pad parasitic elements are subtracted using open and short dummy structure. Measured results indicated that the dual-gate FET is improved the noise figure by 0.2dB compared with conventional cascode structure FET at 5GHz, and it confirmed that the noise figure has dropped due to reduction of capacitances between the drain and source, gate and drain by simulation and analysis of small-signal parameters.

Noise Analysis of Sub Quarter Micrometer AlGaN/GaN Microwave Power HEMT

  • Tyagi, Rajesh K.;Ahlawat, Anil;Pandey, Manoj;Pandey, Sujata
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.9 no.3
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    • pp.125-135
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    • 2009
  • An analytical 2-dimensional model to explain the small signal and noise properties of an AlGaN/GaN modulation doped field effect transistor has been developed. The model is based on the solution of two-dimensional Poisson's equation. The developed model explains the influence of Noise in ohmic region (Johnson noise or Thermal noise) as well as in saturated region (spontaneous generation of dipole layers in the saturated region). Small signal parameters are obtained and are used to calculate the different noise parameters. All the results have been compared with the experimental data and show an excellent agreement and the validity of our model.

Fabrication and Characterization of GaAs/AlGaAs HEMT Device (GaAs/AlGaAs HEMT소자의 제작 및 특성)

  • 이진희;윤형섭;강석봉;오응기;이해권;이재진;최상수;박철순;박형무
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.31A no.9
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    • pp.114-120
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    • 1994
  • We have been successfully fabricated the low nois HEMT device with AlGaAs and GaAs structure. The epitazial layer with n-type AlgaAs and undoped GaAs was grown by molecular beam epitaxy(MBE) system. Ohmic resistivity of the ource and drain contact is below 5${\times}10^{6}{\Omega}{\cdot}cm^{2}$ by the rapid thermal annealing (RTA) process. The ideality factor of the Schottky gate is below 1.6 and the gate material was Ti/Pt/Au. The HEMTs with 0.25$\mu$m-long and 200$\mu$m-wide gates have exhibited a noise figure of 0.65dB with associated gain of 9dB at 12GHz, and a transconductance of 208mS/mm.

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Fabrication of ion implanted GaAs MESFET with Si selectively diffused low resistive layer (선택적 Si 확산을 이용한 저저항층을 갖는 이온주입 GaAs MESFET)

  • 양전욱
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.36D no.3
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    • pp.41-47
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    • 1999
  • Ion implanted GaAs MESFET with low resistive layer was fabricated using Si diffusion into GaAs from SiN. During the thermal annealing at 95$0^{\circ}C$ for 30s, Si diffused into ion implanted region of GaAs from SiN and they formed low resistive layer of 350$\AA$ thickness. The diffusion of Si decreased the sheet resistance of source and drain region from 1000$\Omega$/sq. to 400$\Omega$/sq. and the AuGe/Ni/Au ohmic contact resitivity from 2.5$\times$10sub -6$\Omega$-cmsup 2 to $1.5\times$10sup -6$\Omega$-cmsup 2. The fabricated lum gate length MESFET with Si diffused surface layer shows the transconductance of 360ms/mm, 8.5dB of associated gain and 3.57dB of minimum noise figure at 12GHz. These performances are better than that of MESFET without Si diffused layer.

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Design of a Highly Linear Broadband Active Antenna Using a Multi-Stage Amplifier (다중 증폭 회로를 이용한 높은 선형 특성을 갖는 광대역 능동 안테나 설계)

  • Lee, Cheol-Soo;Jung, Geoun-Seok;Pack, Jeong-Ki
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.19 no.11
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    • pp.1193-1203
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    • 2008
  • An active antenna(AA) can have wider bandwidth and more gain with small antenna size than those of passive antennas. However, AA inherently generates thermal noise and spurious signals from an active device. Moreover, the spurious performance of AA is very important in a highly sensitive receiving system since it is located at the front end of the receiving system. In this study, we developed an AA with $100{\sim}500\;MHz$, having the output P1dB higher than 3 dBm and little spurious signals in real environments. To achieve such performance, we designed an AA with 3-stage amplifier using CD(common drain) FET and 2 BJTs. Its electrical performances were simulated using ADS. The measurement results for typical gain, NF, OIP3, VSWR and P1dB in the required frequency band were 9.7 dBi, 10 dB, 14 dBm, 1.7:1 and 3 dBm respectively. They are in good agreement with simulation results. The unwanted spectrum level of the proposed AA is $10{\sim}30\;dB$ lower than that of the antenna with CS(common source) FET configuration at a west suburban area of Seoul, which shows that the proposed AA can be applicable to a highly sensitive receiving system for detecting unknown weak signals mixed with broadcasting and civilian communication signals.

Recent Progress in Air Conditioning and Refrigeration Research : A Review of Papers Published in the Korean Journal of Air-Conditioning and Refrigeration Engineering in 2007 (설비공학 분야의 최근 연구 동향 : 2007년 학회지 논문에 대한 종합적 고찰)

  • Han, Hwa-Taik;Shin, Dong-Sin;Choi, Chang-Ho;Lee, Dae-Young;Kim, Seo-Young;Kwon, Yong-Il
    • Korean Journal of Air-Conditioning and Refrigeration Engineering
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    • v.20 no.12
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    • pp.844-861
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    • 2008
  • The papers published in the Korean Journal of Air-Conditioning and Refrigeration Engineering during the year of 2007 have been reviewed. Focus has been put on current status of research in the aspect of heating, cooling, ventilation, sanitation and building environments. The conclusions are as follows. (1) The research trends of fluid engineering have been surveyed as groups of general fluid flow, fluid machinery and piping, etc. New research topics include micro nano fluid, micropump and fuel cell. Traditional CFD was still popular and widely used in research and development. Studies about fans and pumps were performed in the field of fluid machinery. Characteristics of flow and fin shape optimization are studied in the field of piping system. (2) The research works on heat transfer have been reviewed in the field of heat transfer characteristics, heat exchangers, and desiccant cooling systems. The research on heat transfer characteristics includes thermal transport in pulse tubes, high temperature superconductors, ground heat exchangers, fuel cell stacks and ice slurry systems. For the heat 'exchangers, the research on pin-tube heat exchanger, plate heat exchanger, condensers and gas coolers has been cordially implemented. The research works on heat transfer augmenting tubes have been also reported. For the desiccant cooling systems, the studies on the design and operating conditions for desiccant rotors as well as performance index are noticeable. (3) In the field of refrigeration, many papers were presented on the air conditioning system using CO2 as a refrigerant. The issues on the two-stage compression, the oil selection, and the appropriate oil charge were treated. The subjects of alternative refrigerants were also studied steadily. Hydrocarbons, DME and their mixtures were considered and various heat transfer correlations were proposed. (4) Research papers have been reviewed in the field of building facilities by grouping into the researches on heat and cold sources, air conditioning and air cleaning, ventilation and fire research including tunnel ventilation, flow control of piping system, and sound research with drain system. Main focuses have been addressed to the promotion of efficient or effective use of energy, which helps to save energy and results in reduced environmental pollution and operating cost. (5) Studies were mostly focused on analyzing the indoor environment in various spaces like cars, old tombs, machine rooms, and etc. in an architectural environmental field. Moreover, subjects of various fields such as the evaluation of noise, thermal environment, indoor air quality and development of energy analysis program were researched by various methods of survey, simulation, and field experiment.