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Analytical Thermal Noise Model of Deep-submicron MOSFETs  

Shin, Hyung-Cheol (School of Electrical Engineering, Seoul National University)
Kim, Se-Young (School of Electrical Engineering, Seoul National University)
Jeon, Jong-Wook (School of Electrical Engineering, Seoul National University)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.6, no.3, 2006 , pp. 206-209 More about this Journal
Abstract
This paper presents an analytical noise model for the drain thermal noise, the induced gate noise, and their correlation coefficient in deep-submicron MOSFETs, which is valid in both linear region and saturation region. The impedance field method was used to calculate the external drain thermal noise current. The effect of channel length modulation was included in the analytical equation. The noise behavior of MOSFETs with decreasing channel length was successfully predicted from our model.
Keywords
RF CMOS; drain thermal noise; induced gate noise; velocity saturation effect; impedance field method;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
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