• Journal of Korean Academy of Fundamentals of Nursing
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• v.10 no.3
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• pp.292-299
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• 2003

Purpose: The purpose of this study was to describe motivational factors and barriers which nurses experience while preparing for the NCLEX-RN Exam. Method: Data was collected from July 5 to August 28, 2002 using self-administered open questionnaires. A total 144 nurses preparing for the NCLEX-RN Exam participated in this study. Descriptive statistics were used and respondents' statements were analyzed using content analysis. Result: The motivation for taking the NCLEX-RN Exam was for a new adventure (23.7%), better working conditions and benefits (20.4%), children's education (14.5%), to study aboard (13.8%), economic issues (11.8%), and career issues (11.2%). The barriers while preparing for the NCLEX-RN Exam were studying in English (35.3%), fatigue (21.8%) limited time (16.0%), lack of information (8.3%), complicated documentation (5.1%), and cultural differences (4.5%). Conclusion: The result suggests that it is imperative to improve working conditions and benefits for nurses in Korea to prevent the brain drain of highly experienced nurses to other countries. It is also essential to develop strategies to minimize the barriers to support nurses preparing for the NCLEX-RN Exam and promote jobs overseas.

• Journal of the Korean Society of Hazard Mitigation
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• v.9 no.3
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• pp.9-17
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• 2009

Most of the current drainage criteria have been developed on the basis of experimental field results and theoretical analyses of infiltration under saturated conditions. The objective of this study is to extend the understanding of pavement drainage systems by considering unsaturated condition in the sublayers. Analyses of unsaturated flows through pavements was performed by running finite element program(SEEP/W) with a range of pavement materials and drainage parameters. Meanwhile, the widely used DRIP program developed by FHWA is based on assumption of saturated condition of pavements. Differences between saturated and unsaturated condition in the sublayers of the pavements are verified. It is verified that for unsaturated conditions time to drain would take longer time compared to saturated condition.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2005.05a
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• pp.133-136
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• 2005

Recently, a drain of energy resources is issued seriously. The daylight responsive dimming systems can reduce electric energy uses. But, we cannot predict amounts of energy-saving and accuracy of system performance. Therefore, the purpose of this study is a development of software for the system performance of daylight responsive dimming systems. The principle of this software based on luminous flux transfer method and finite elements method. The control algorithm of this software and daylight responsive dimming systems use the same algorithm. In addition the advantages of this software are use to same algorithm of daylight responsive dimming systems, electric power-luminous flux data and rates of frequency of sky conditions. Therefore, this software can predict more correct calculation about illuminance and amounts of energy-saving of daylight responsive dimming systems.

• Advances in nano research
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• v.5 no.1
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• pp.61-67
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• 2017

A semi-empirical approach to model the temperature effects on I-V characteristics of Carbon Nanotube Field Effect Transistors (CNTFETs) is proposed. The model includes two thermal parameters describing CNTFET behaviour in terms of saturation drain current and threshold voltage, whose values are extracted from the simulated and trans-characteristics of the device in different temperature conditions. Our results are compared with those of a numerical model online available, obtaining I-V characteristics comparable but with a lower CPU calculation time.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.11
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• pp.1706-1711
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• 1989

Unit processes for the fabrication of HEMT(high electron mobility transistor)was studied and the optimum conditions of them were applied to the fabrifcation of a discrete HEMT device. The HEMT with a nominal gate-source spacing of 3.6\ulcorner and a gate length of 2.8\ulcorner showed a transconductance of 46.1mS/mm and a threshold voltage of -0.29V. A source-drain voltage of 2.0V for a saturation current of 35mA/mm was achieved.

• Proceedings of the Korean Geotechical Society Conference
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• 2004.03b
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• pp.90-99
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• 2004

Stone column is one of the soft ground improvement method, which enhances ground conditions through ground water draining, settlement reducing and bearing capacity increasing complexly by using crushed stone instead of sand in general vertical drain methods. In recent, general construction material, sand is in short of supply, because of the unbalance of demand and supply. Also, the bearing capacity improving effect of stone column method is needed in many cases so the bearing capacity estimation is considered as important point. Nevertheless, adequate estimation methods to predict bearing capacity of stone column considering stone column and improving ground behavior reciprocally is not yet prepared. To contribute this situation, bearing capacity behavior of stone column were simulated as numerically on various property cases of crushed stone and surrounded ground. Through the numerical analysis of simulation results, bearing capacity behavior prediction formula was suggested. This formula was verified by comparing the prediction result with in situ test.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1135-1138
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• 2006

By ink-jet printing method, organic thin-film transistors (OTFTs) having soluble 6,13-bis (triisopropylsilylethynyl) pentacene (TIPS pentacene) as an active material were fabricated. The TIPS pentacene solution was made with chlorobenzene and anisole. The solutions were printed on poly (4-vinylphenol) (PVP) dielectric layers and source/drain electrodes by piezo-type heads for bottom contact OTFTs. The dielectric layers had untreated or HMDS-treated conditions. The chlorobenzene device showed the highest field effect mobility of $0.016\;cm^2/Vs$ and the anisole HMDS-treated device shows the highest $I_{on}/I_{off}$ ratio of $10^5$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.2
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• pp.123-129
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• 2001

The optimal high temperature processing conditions for the formation of Ohmic contact of Ti/Al/Pt/Au multiple layers were established for the fabrication of n$^{+}$-GaN/AlGaN/GaN HFET device. Contact resistivity as low as 3.4x10$^{-6}$ ohm-$\textrm{cm}^2$ was achieved by the annealing of the sample at 100$0^{\circ}C$ for 10 sec. using the RTA (Rapid Thermal Annealing) system. The fabricated HFET (Heterostructure Field Effect Transistor) with a structure of n'-GaN/undoped AlGaN/undoped GaN exhibited a low knee voltage of 3.5 V and a maximum source-drain current density of 180 mA/mm at Vg=0V.V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.357-357
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• 2010

The electrical characteristics of ZnO thin film transistor (TFT) were investigated. ZnO thin layer was deposited by DC sputtering method and TFTs with ZnO channel layer were fabricated. On/off current ratio and saturated drain current of fabricated devices were improved by annealing in nitrogen ambient at various temperatures. As a result, the electrical characteristics of ZnO TFT were improved by post annealing in nitrogen ambient and it is important to optimize the annealing conditions for ZnO TFT fabrication.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.217-220
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• 2002

In this paper, we have investigated electronical chara-cteristics of power LDMOSFETS having different ex-tended gate lengths(1.B${\mu}{\textrm}{m}$, 2.4${\mu}{\textrm}{m}$, 3.O${\mu}{\textrm}{m}$) in the temperature range of 300k-500K. The results of this study indicate that on-resistance, breakdown voltage increase with temperature. and drain current, threshold voltage, transconductance decrease with temperature. Particular the facts, we observed that Le is the more increase, on-resistance is the more decrease. because every conditions are fixed normal states, only change the Le. As a result, Ron/BV, known for a figure of merit of power device, increase with temperature.