Journal of the Korean Institute of Telematics and Electronics (대한전자공학회논문지)

The Institute of Electronics and Information Engineers (대한전자공학회)
권호 표지

A Study on HEMT Device Process, Part III: Fabrication of a discrete Device and its Characteristics

HEMT 소자 공정연구, Part III : 개별소자 제작 및 특성분석

  • 이종람 (한국전자통신연구소 화합물반도체연구부) ;
  • 이재진 (한국전자통신연구소 화합물반도체연구부) ;
  • 맹성재 (한국전자통신연구소 화합물반도체연구부) ;
  • 박성호 (한국전자통신연구소 화합물반도체연구부) ;
  • 마동훈 (한국전자통신연구소 화합물반도체연구부) ;
  • 강태원 (한국전자통신연구소 화합물반도체연구부) ;
  • 김진섭 (한국전자통신연구소 화합물반도체연구부) ;
  • 마동성 (한국전자통신연구소 화합물반도체연구부)
  • Published : 1989.11.01
Download PDF
⟨ Previous Next ⟩

Abstract

Unit processes for the fabrication of HEMT(high electron mobility transistor)was studied and the optimum conditions of them were applied to the fabrifcation of a discrete HEMT device. The HEMT with a nominal gate-source spacing of 3.6\ulcorner and a gate length of 2.8\ulcorner showed a transconductance of 46.1mS/mm and a threshold voltage of -0.29V. A source-drain voltage of 2.0V for a saturation current of 35mA/mm was achieved.

Keywords