Advances in nano research

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An approach to model the temperature effects on I-V characteristics of CNTFETs

  • Marani, Roberto (Consiglio Nazionale delle Ricerche, Istituto di Studi sui Sistemi Intelligenti per l'Automazione) ;
  • Perri, Anna G. (Dipartimento di Ingegneria Elettrica e dell'Informazione, Laboratorio di Dispositivi Elettronici)
  • Received : 2016.11.10
  • Accepted : 2017.01.19
  • Published : 2017.03.25
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Abstract

A semi-empirical approach to model the temperature effects on I-V characteristics of Carbon Nanotube Field Effect Transistors (CNTFETs) is proposed. The model includes two thermal parameters describing CNTFET behaviour in terms of saturation drain current and threshold voltage, whose values are extracted from the simulated and trans-characteristics of the device in different temperature conditions. Our results are compared with those of a numerical model online available, obtaining I-V characteristics comparable but with a lower CPU calculation time.

Keywords

References

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