• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.10a
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• pp.765-768
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• 2014

본 연구에서는 비대칭 이중게이트 MOSFET의 상하단 게이트 산화막 두께 비에 대한 문턱전압 및 전도중심의 변화에 대하여 분석하고자한다. 비대칭 이중게이트 MOSFET는 상하단 게이트 산화막의 두께를 다르게 제작할 수 있어 문턱전압이하 영역에서 전류를 제어할 수 있는 요소가 증가하는 장점이 있다. 상하단 게이트 산화막 두께 비에 대한 문턱전압 및 전도중심을 분석하기 위하여 포아송방정식을 이용하여 해석학적 전위분포를 구하였다. 이때 전하분포는 가우스분포함수를 이용하였다. 하단게이트 전압, 채널길이, 채널두께, 이온주입범위 및 분포편차를 파라미터로 하여 문턱전압 및 전도중심의 변화를 관찰한 결과, 문턱전압은 상하단 게이트 산화막 두께 비에 따라 큰 변화를 나타냈다. 특히 채널길이 및 채널두께의 절대값보다 비에 따라 문턱전압이 변하였으며 전도중심이 상단 게이트로 이동할 때 문턱전압은 증가하였다. 또한 분포편차보단 이온주입범위에 따라 문턱전압 및 전도중심이 크게 변화하였다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.9 no.3
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• pp.576-581
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• 2005

In this paper. the a-Si:H TFT using ferroelectric of $SrTiO_3$ as a gate insulator is fabricated on glass. High k gate dielectric is required for on-current, threshold voltage and breakdown characteristics of TFT Dielectric characteristics of ferroelectric are superior to $SiO_2$ and $Si_3N_4$. Ferroelectric increases on-current and decreases threshold voltage of TFT and also ran improve breakdown characteristics.$SrTiO_4$ thin film is deposited by e-beam evaporation. Deposited films are annealed for 1 hour in N2 ambient at $150^{\circ}C\~600^{\circ}C$. Dielectric constant of ferroelectric is about 60-100 and breakdown field is about IMV/cm. In this paper, the TFT using ferroelectric consisted of double layer gate insulator to minimize the leakage current. a-SiN:H, a-Si:H (n-type a-Si:H) are deposited onto $SrTiO_3$ film to make MFNS(Metal/ferroelectric/a-SiN:H/a-Si:H) by PECVD. In this paper, TFR using ferroelectric has channel length of$8~20{\mu}m$ and channel width of $80~200{\mu}m$. And it shows that drain current is $3.4{\mu}A$at 20 gate voltage, $I_{on}/I_{off}$ is a ratio of $10^5\~10^8,\;and\;V_{th}$ is$4\~5\;volts$, respectively. In the case of TFT without having ferroelectric, it indicates that the drain current is $1.5{\mu}A$ at 20gate voltage and $V_{th}$ is $5\~6$ volts. If properties of the ferroelectric thin film are improved, the performance of TFT using this ferroelectric thin film can be advanced.

• Journal of the Institute of Electronics Engineers of Korea CI
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• v.43 no.2 s.308
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• pp.21-32
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• 2006

The license plate recognition (LPR) unit consists of the following core components: plate region segmentation, individual character extraction, and character recognition. Out of the above three components, accuracy in the performance of plate region segmentation determines the overall recognition rate of the LPR unit. This paper proposes an algorithm for segmenting the license plate region on the front or rear of a vehicle in a fast and accurate manner. In the case of the proposed algorithm images are captured on the spot where unmanned monitoring of illegal parking and stowage is performed with a variety of roadway environments taken into account. As a means of enhancing the segmentation performance of the on-the-spot-captured images of license plate regions, the proposed algorithm uses a mathematical model for license plate colors to convert color images into digital data. In addition, this algorithm uses Gaussian smoothing and double threshold to eliminate image noises, one-pass boundary tracing to do region labeling, and MBR to determine license plate region candidates and extract individual characters from the determined license plate region candidates, thereby segmenting the license plate region on the front or rear of a vehicle through a verification process. This study contributed to addressing the inability of conventional techniques to segment the license plate region on the front or rear of a vehicle where the frame of the license plate is damaged, through processing images in a real-time manner, thereby allowing for the practical application of the proposed algorithm.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2010.10a
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• pp.737-739
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• 2010

In this paper, the subthreshold characteristics have been alanyzed using MicroTec4.0 for double gate MOSFET(DGMOSFET). The technology for characteristic analysis of device for high integration is changing rapidly. Therefore to understand characteristics of high-integrated device by computer simulation and fabricate the device having such characteristics became one of very important subjects. The oxide thickness and channel thickness in DG MOSFET determines threshold voltage and extensively influences on Ss(Subthreshold swing). We have investigated the threshold voltage and Ss(Subthreshold swing) characteristics according to variation of channel thickness from 1nm to 3nm in this study.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2010.10a
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• pp.715-717
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• 2010

In this paper, the subthreshold characteristics have been alanyzed using MicroTec4.0 for double gate MOSFET(DGMOSFET). The DGMOSFET is extensively been studing since it can reduce the short channel effects due to structural characteristics. We have presented the short channel effects such as subthreshold swing and threshold voltage for DGMOSFET, using MicroTec, semiconductor simulator. We have analyzed for channel length, thickness and width to consider the structural characteristics for DGMOSFET. The subthreshold swing and threshold voltage have been analyzed for DGMOSFET using MicroTec since MicroTec is well verified as comparing with results of the numerical three dimensional models.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.6
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• pp.1-7
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• 2004

We performed two-dimensional (20) computer-based modeling and simulation of FinFET by solving the coupled Poisson-Schrodinger equations quantum-mechanically in a self-consistent manner. The simulation results are carefully investigated for FinFET with gate length(Lg) varying from 10 to 80nm and with a Si-fin thickness($T_{fin}$) varying from 10 to 40nm. Current-voltage (I-V) characteristics are compared with the experimental data. Device optimization has been performed in order to suppress the short-channel effects (SCEs) including the sub-threshold swing, threshold voltage roll-off, drain induced barrier lowering (DIBL). The quantum-mechanical simulation is compared with the classical appmach in order to understand the influence of the electron confinement effect. Simulation results indicated that the FinFET is a promising structure to suppress the SCEs and the quantum-mechanical simulation is essential for applying nano-scale device structure.

• The Korean Journal of Physiology and Pharmacology
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• v.1 no.3
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• pp.233-240
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• 1997

Neurons in the nucleus raphe magnus are involved in descending modulation of nociceptive transmission. In this study, we attempted to investigate electrophysiological properties of the NRM neurons dissociated from the postnatal rat medulla. The NRM neurons in the coronal slices of and the dissociated neurons from the postnatal rat medullae were immunohistochemically identified using antibody against serotonin. Relatively small number of neurons were positively stained in both preparations. The positively stained neurons displayed large cell body with double or multiple neurites. Using whole-cell patch clamp configuration ionic currents were recorded from the dissociated NRM-like neurons selected by criteria such as size and shape of cell body and cell population. Two types, high- and low-threshold, of voltage-dependent calcium currents were recorded from the dissociated NRM-like neurons. Some neurons displayed both types of calcium currents, whereas others displayed only high-threshold calcium current. Voltage-dependent potassium currents were also recorded from the dissociated NRM neurons. Some neurons displayed both transient outward and delayed rectifier currents but others showed only delayed rectifier current. These results suggest that there are at least two types of calcium currents and two types of potassium currents in the dissociated NRM neurons.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.154-154
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• 2012

Flexible complementary inverters based on thin-film transistors (TFTs) are important because they have low power consumption and high voltage gain compared to single type circuits. We have manufactured flexible complementary inverters using pentacene and amorphous indium gallium zinc oxide (IGZO) for the p-channel and n-channel, respectively. The circuits were fabricated on polyimide (PI) substrate. Firstly, a thin poly-4-vinyl phenol (PVP) layer was spin coated on PI substrate to make a smooth surface with rms surface roughness of 0.3 nm, which was required to grow high quality IGZO layers. Then, Ni gate electrode was deposited on the PVP layer by e-beam evaporator. 400-nm-thick PVP and 20-nm-thick ALD Al2O3 dielectric was deposited in sequence as a double gate dielectric layer for high flexibility and low leakage current. Then, IGZO and pentacene semiconductor layers were deposited by rf sputter and thermal evaporator, respectively, using shadow masks. Finally, Al and Au source/drain electrodes of 70 nm were respectively deposited on each semiconductor layer using shadow masks by thermal evaporator. The characteristics of TFTs and inverters were evaluated at different bending radii. The applied strain led to change in voltage transfer characteristics of complementary inverters as well as source-drain saturation current, field effect mobility and threshold voltage of TFTs. The switching threshold voltage of fabricated inverters was decreased with increasing bending radius, which is related to change in parameters of TFTs. Throughout the bending experiments, relationship between circuit performance and TFT characteristics under mechanical deformation could be elucidated.

• Nuclear Engineering and Technology
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• v.32 no.1
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• pp.1-9
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• 2000

Delayed hydride cracking (DHC) velocity and threshold stress intensity factor for DHC ($K_{IH}$) tests in the radial direction on M11 pressure tube material in Wolsong unit 1 were carried out following the Atomic Energy Canada Limited (AECL) standard test procedure in order to identify the effect of undercooling on DHCV and to acquire the $K_{IH}$ data. The results showed that $K_{IH}$ 's were 8.8$\pm$0.8 MPa√m in the back offcut and 11.4$\pm$0.7 MPa√m in the front offcut. The fact that $K_{IH}$ in the front offcut is about 20% higher than that in the back offcut is attributed to the microstructural difference between the materials of the front and back ends. $K_{IH}$ 's in M11 pressure tube appeared to be higher than the values from the tubes made of double melted ingot reported earlier. This can be interpreted by the fact that very small amounts of Chlorine (Cl) and Phosphorus (P) are contained in the ingot and that the content of the harmful elements in the M11 pressure tube is equivalent to that made of a quadruple melting process. DHC velocities at 25$0^{\circ}C$ in the front offcut in the radial direction are measured to be 5~8$\times$10$^{-8}$ m/s. The results show that the prior thermal history change the DHC velocity significantly. This effect was confirmed by the experiment of undercooling prior to the DHC tests.DHC tests.

• Journal of the Korean Institute of Intelligent Systems
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• v.17 no.7
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• pp.939-944
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• 2007

Edge is a significant element to represent boundary information between objects in images. There are various edge detection methods, which are based on differential operation, such as Sobel, Prewitt, Roberts, Canny, Laplacian, and etc. However the conventional methods have drawbacks as follow : (i) insensitivity to edges with gentle curve intensity, (ii) detection of double edges for edges with one pixel width. For the detection of edges, not only development of the effective operators but also that of appropriate thresholding methods are necessary. But it is very complicate problem to find an appropriate threshold. In this paper, we propose an edge detection method based on the region separateness between objects to overcome the drawbacks of the conventional methods, and a thresholding method for the proposed edge detection method. We show the effectiveness of the proposed method through experimental results obtained by applying the proposed and the conventional methods to well-known test images.