• Applied Science and Convergence Technology
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• 제24권6호
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• pp.224-227
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• 2015

Ferroelectric $Pb_2(Sc,Nb)O_6$ were prepared under two different sintering conditions using the oxide mixing method and the electrical properties were measured. The sintering conditions were $1350^{\circ}C$ for 25 minutes and $1400^{\circ}C$ for 20 minutes. EDX spectroscopy and XRD were used to determine the crystalline characteristic of the $Pb_2(Sc,Nb)O_6$ compositions Pyrochlore phase showed about 2% in all $Pb_2(Sc,Nb)O_6$ specimens. It expands the growth of crystals in samples sintered at $1400^{\circ}C$ than $1350^{\circ}C$, but all samples were the optimal crystallization. The temperature and frequency dependence of the complex dielectric constant and admittance were measured to analyze the electrical properties. The high dielectric constant of the specimens reflects the good stoichiometry and crystallization. The maximum value of the dielectric constant in the two specimens treated with sintering at $1350^{\circ}C$ and $1400^{\circ}C$ were more than 27,000, and the dielectric loss at room temperature is smaller than 0.05. The maximum dielectric constant decreased with increasing frequency, the transition temperature also increased in $Pb_2(Sc,Nb)O_6$ compositions. The admittance and susceptance values reach a peak at all temperatures, and the magnitude of the peak increases with increasing measuring temperature. Strong frequency dependent of maximum admittance, susceptance, dielectric constant and dielectric loss were observed.

• Applied Science and Convergence Technology
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• 제25권4호
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• pp.77-80
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• 2016

The $PbSc_{1/2}Nb_{1/2}O_3$ ceramics at a relatively low temperature of $1300^{\circ}C$ was successful synthesized. Solid state reaction of two-step process is not necessary. The dielectric constant, dielectric loss and admittance of ceramic samples were determined. The pyroelectric characteristics are in good agreement with the dielectric properties. Ferroelectric properties of well-formed the $PbSc_{1/2}Nb_{1/2}O_3$ ceramics are in agreement with broad distribution of relaxation phenomenon. Relatively strong frequency dependent of dielectric constant is observed at about $110^{\circ}C$. The distinct thermal hysteresis was observed in the measurement of the dielectric constant and dielectric loss. The critical exponents of during cooling and heating measurements in the $PbSc_{1/2}Nb_{1/2}O_3$ ceramics were 1.14 and 1.59 at 1 kHz, respectively.

• 한국세라믹학회지
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• 제36권6호
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• pp.590-598
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• 1999

• Macromolecular Research
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• 제14권6호
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• pp.617-623
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• 2006

In order to achieve an oriental lacquer (OL) film with a thick consistency, UV-curable silicone acrylate (SA) was added to OL by a dual curing process. The addition of 5 wt% UV-curable SA to the OL fomulation enabled the preparation via a single drying step of a $77{\mu}m-thick$ film exhibiting excellent surface properties. FTIR-ATR was used to investigate the effect of UV-curable SA on the behavior of film formation during curing, and the relaxation behavior of the produced films was investigated by dielectric spectroscopy. Dielectric properties were measured in the frequency range $10^{-2}-10^5\;Hz$ at various temperatures between -100 and $200^{\circ}C$. The results demonstrated that OL modified by UV-curable SA has a higher glass transition temperature and stronger secondary relaxation at a lower temperature than the conventional OL system. The OL film modified with UV-curable SA was presumed to be harder at the surface and tougher than conventional OL film.

• 전기학회논문지
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• 제57권9호
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• pp.1572-1578
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• 2008

The effect of the organoclay_10A nanoparticles on the DSC and Structural and Dielectrics Properties(1Hz-1MHz) for epoxy/Organoclay_10A Nanocomposites has been studied. Dielectric properties of epoxy-Organoclay nanocomposites were investigated at 1, 3, 5, 7, 9 filler concentration by weight. Epoxy nanocomposites samples were prepared with good dispersion of layered silicate using power ultrasonic method in the particles. As structural analysis, the interlayer spacing have decreased with filled nanoparticles contents increase using power ultrasonic dispersion. The maximum increase interlayered spacing was observed to decease for above 5wt% clay loading. The other hand, as decrease with concentration filler of the layered silicate were increased dispersion degree of nanoparticles in the matrix. The interesting dielectric properties for epoxy based nanocomposites systems are attributed to the large volume fraction of interfacesin the bulk of the material and the ensuring interactions between the charged nanoparticle surface and the epoxy chains.

• 한국재료학회지
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• 제21권4호
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• pp.236-241
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• 2011

Polysilazane and silazane-based precursor films were deposited on stacked TiN/Ti/TEOS/Si-substrate by spin-coating, then annealed at $150{\sim}400^{\circ}C$, integrated further to form the top electrode and pad, and finally characterized. The precursor solutions were composed of 20% perhydro-polysilazane ($SiH_2NH$)n, and 20% hydropolymethyl silazane ($SiHCH_3NH$)n in dibutyl ether. Annealing of the precursor films led to the compositional change of the two chemicals into silicon (di)oxides, which was confirmed by Fourier transform infrared spectroscopy (FTIR) spectra. It is thought that the different results that were obtained originated from the fact that the two precursors, despite having the same synthetic route and annealing conditions, had different chemical properties. Electrical measurement indicated that under 0.6MV/cm, a larger capacitance of $2.776{\times}10^{-11}$ F and a lower leakage current of 0.4 pA were obtained from the polysilazane-based dielectric films, as compared to $9.457{\times}10^{-12}$ F and 2.4 pA from the silazane-based film, thus producing a higher dielectric constant of 5.48 compared to 3.96. FTIR indicated that these superior electrical properties are directly correlated to the amount of Si-O bonds and the improved chemical bonding structures of the spin-on dielectric films, which were derived from a precursor without C. The chemical properties of the precursor films affected both the formation and the electrical properties of the spin-on dielectric film.

• E2M - 전기 전자와 첨단 소재
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• 제10권9호
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• pp.960-967
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• 1997

• 한국전기전자재료학회논문지
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• 제23권10호
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• pp.771-775
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• 2010

In this study, piezoelectric and dielectric properties of the $(Na_{0.5}K_{0.5})NbO_3-(1-x)(Bi_{0.5}Na_{0.5})TiO_3-xBaTiO_3$ [NKN-(1-x)BNT-xBT] ceramics were investigated. The lead-free NKN-(1-x)BNT-xBT ceramics were fabricated by a conventional mixed oxide method. The results indicate that the addition of $BaTiO_3$ significantly influences the sintering, microstructure, phase transition and electrical properties of NKN-BNT ceramics. A gradual change in the piezoelectric and dielectric properties was observed with the increase of BT contents. The dielectric constant, piezoelectric constant ($d_{33}$) and electromechanical coupling factor ($k_p$) increased at the morphotropic phase boundary (MPB). The $d_{33}$=184 pC/N, $k_p$=0.38, dielectric constant=1455 with dielectric loss value of less than 1% were obtained for the NKN-0.95BNT-0.05BT ceramics sintered at $1150^{\circ}C$ for 2h. These results demonstrate that the NKN-(1-x)BNT-xBT ceramics is an attractive candidate for lead-free piezoelectric materials.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.402-405
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• 2001

The BaTiO$_3$+10wt%Nb$_2$O$_{5}$ ceramics were prepared by conventional mixed oxide method. The structural and dielectric properties of the BaTiO$_3$+10wt%Nb$_2$O$_{5}$ ceramics with the sintering temperature were investigated. Increasing the sintering temperature, the 2$\theta$ value of BaTiO$_3$peaks were shifted to the higher degree and intensity of the BaTiO$_3$and BaNbO$_3$peaks were increased. In the BaTiO$_3$+10wt%Nb$_2$O$_{5}$ ceramics sintered at 135$0^{\circ}C$ and 1375$^{\circ}C$, the grain was fine and uniform. Increasing the sintering temperature, the pore was decreased and the dielectric constant was increased. In the BaTiO$_3$+10wt%Nb$_2$O$_{5}$ ceramics sintered at 1375$^{\circ}C$, the dielectric constant and dielectric loss were 5424, 0.02 respectively.ctively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.292-293
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• 2006

We have Investigated dielectric properties depending on bias voltage in organic lightemitting diodes using 8-hydroxyquinoline aluminum($Alq_3$) as an electron transport and emissive material. We analyzed the dielectric properties of organic light emitting diodes using impedance characteristics measurement by the auto-balancing bridge technique and equivalent cirrcuit of ITO/$Alq_3$/Al. Impedance characteristics was measured complex impedance Z and phase ${\theta}$ in the frequency range of 40 [Hz] to $10^8$ [Hz]. We obtained complex electrical conductivity, dielectric constant, and loss tangent ($tan{\delta}$) of the device at room temperature. From these analyses, we are able to interpret a conduction mechanism and dielectric properties contributed by an interfacial and orientational polarization.