• Title/Summary/Keyword: device structure

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Analysts on the Sealing of Nano Structure MOSFET (나노 구조 MOSFET의 스켈링에 대한 특성 분석)

  • 장광균;정학기;이종인
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.5 no.3
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    • pp.573-579
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    • 2001
  • The technology for characteristic analysis of device for high integration is changing rapidly. Therefore to understand characteristics of high -integrated device by computer simulation and fabricate the device having such characteristics became one of very important subjects. As devices become smaller from submicron to nanometer, we have investigated MOSFET built on an epitaxial layer(EPI) of a heavily-doped ground plane by TCAD(Technology Computer Aided Design) to develop optimum device structure. We analyzed and compared the EPI device characteristics such as impact ionization, electric field and I-V curve with those of lightly doped drain(LDD) MOSFET. Also, we presented that TCAD simulator is suitable for device simulation and the scaling theory is suitable at nano structure device.

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Least Squares Method-Based System Identification for a 2-Axes Gimbal Structure Loading Device (2축 짐벌 구조 적재 장치를 위한 최소제곱법 기반 시스템 식별)

  • Sim, Yeri;Jin, Sangrok
    • The Journal of Korea Robotics Society
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    • v.17 no.3
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    • pp.288-295
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    • 2022
  • This study shows a system identification method of a balancing loading device for a stair climbing delivery robot. The balancing loading device is designed as a 2-axes gimbal structure and is interpreted as two independent pendulum structures for simplifying. The loading device's properties such as mass, moment of inertia, and position of the center of gravity are changeable for luggage. The system identification process of the loading device is required, and the controller should be optimized for the system in real-time. In this study, the system identification method is based on least squares method to estimate the unknown parameters of the loading device's dynamic equation. It estimates the unknown parameters by calculating them that minimize the error function between the real system's motion and the estimated system's motion. This study improves the accuracy of parameter estimation using a null space solution. The null space solution can produce the correct parameters by adjusting the parameter's relative sizes. The proposed system identification method is verified by the simulation to determine how close the estimated unknown parameters are to the real parameters.

A Study on the Design and Electrical Characteristics of High Performance Smart Power Device (고성능 Smart Power 소자 설계 및 전기적 특성에 관한 연구)

  • Ku, Yong-Seo
    • Journal of IKEEE
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    • v.7 no.1 s.12
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    • pp.1-8
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    • 2003
  • In this study, the high performance BCD device structure which satisfies the high voltage and fast switching speed characteristics is devised. Through the process and device simulation, optimal process spec. & device spec. are designed. We adapt double buried layer structure, trench isolation process, n-/p-drift region formation and shallow junction technology to optimize an electrical property as mentioned above. This I.C consists of 20V level high voltage bipolar npn/pnp device, 60V level LDMOS device, a few Ampere level VDMOS, 20V level CMOS device and 5V level logic CMOS.

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A study on the electrical switching properties of oxide metal (산화금속의 전기적 스위칭 특성 연구)

  • Choi, Sung-Jai;Lee, Won-Sik
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.9 no.3
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    • pp.173-178
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    • 2009
  • We have investigated the electrical properties of oxide metal thin film device. The device has been fabricated top-top electrode structure and its transport properties are measured in order to study the resistance change. Electrical properties with linear voltage sweep on a electrodes are used to show the variation of resistance of oxide metal thin film device. Fabricated oxide metal thin film device with MIM structure is changed from a low conductive Off-state to a high conductive On-state by the external linear voltage sweep. The $Si/SiO_2/MgO$ device is switched from a high resistance state to a low resistance state by forming. Consequently, we believe oxide metal is a promising material for a next-generation nonvolatile memory and other electrical applications.

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A Study on the Efficiency Effects of Capping Layer on the Top Emission Organic Light Emitting Diode (전면 유기발광 다이오드 기능층 캐핑레이어 적용에 따른 효율상승에 관한 연구)

  • Lee, DongWoon;Cho, Eou Sik;Jeon, Yongmin;Kwon, Sang Jik
    • Journal of the Semiconductor & Display Technology
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    • v.21 no.3
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    • pp.119-124
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    • 2022
  • Top emission organic light-emitting diode (TEOLED) is commonly used because of high efficiency and good color purity than bottom - emission organic light-emitting device (BEOLED). Unlike BEOLED, TEOLED contain semitransparent metal cathode and capping layer. Because there are many characteristics to consider just simple thickness change, optimizing organic thickness of TEOLED for microcavity is difficult. So, in this study, we optimized Device capping layer at unoptimized micro-cavity structure TEOLED device. And we compare only capping layer with unoptimized microcavity structure can overcome optimized micro-cavity structure device. We used previous our optimized micro-cavity structure to compare each other. As a result, it has been found that the efficiency can be obtained almost the same or higher only capping layer, which is stacked on top of the device and controls only the thickness and refractive index, without complicated structural calculations. This means that higher efficiencies can be obtained more easily in laboratories with limited organic materials or when optimizing new structures etc.

Effect of P-Emitter Length and Structure on Asymmetric SiC MOSFET Performance (P-Emitter의 길이, 구조가 Asymmetric SiC MOSFET 소자 성능에 미치는 영향)

  • Kim, Dong-Hyeon;Koo, Sang-Mo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.33 no.2
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    • pp.83-87
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    • 2020
  • In this letter, we propose and analyze a new asymmetric structure that can be used for next-generation power semiconductor devices. We compare and analyze the electrical characteristics of the proposed device with respect to those of symmetric devices. The proposed device has a p-emitter on the right side of the cell. The peak electric field is reduced by the shielding effect caused by the p-emitter structure. Consequently, the breakdown voltage is increased. The proposed asymmetric structure has an approximately 100% higher Baliga's figure of merit (~94.22 MW/㎠) than the symmetric structure (~46.93 MW/㎠), and the breakdown voltage of the device increases by approximately 70%.

Performance Evaluation of SSD-Index Maintenance Schemes in IR Applications

  • Jin, Du-Seok;Jung, Hoe-Kyung
    • Journal of information and communication convergence engineering
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    • v.8 no.4
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    • pp.377-382
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    • 2010
  • With the advent of flash memory based new storage device (SSD), there is considerable interest within the computer industry in using flash memory based storage devices for many different types of application. The dynamic index structure of large text collections has been a primary issue in the Information Retrieval Applications among them. Previous studies have proven the three approaches to be effective: In- Place, merge-based index structure and a combination of both. The above-mentioned strategies have been researched with the traditional storage device (HDD) which has a constraint on how keep the contiguity of dynamic data. However, in case of the new storage device, we don' have any constraint contiguity problems due to its low access latency time. But, although the new storage device has superiority such as low access latency and improved I/O throughput speeds, it is still not well suited for traditional dynamic index structures because of the poor random write throughput in practical systems. Therefore, using the experimental performance evaluation of various index maintenance schemes on the new storage device, we propose an efficient index structure for new storage device that improves significantly the index maintenance speed without degradation of query performance.

A Study on SCR-based Dual Directional ESD Protection Device with High Holding Voltage by Self-Biasing Effect (Self-Biasing 효과로 높은 홀딩 전압을 갖는 SCR 기반 양방향 ESD 보호 소자에 관한 연구)

  • Jung, Jang-Han;Jeong, Seung-Koo;Koo, Yong-Seo
    • Journal of IKEEE
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    • v.26 no.1
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    • pp.119-123
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    • 2022
  • This paper propose a new ESD protection device suitable for 12V class applications by adding a self-biasing structure to an ESD protection device with high holding voltage due to additional parasitic bipolar BJT. To verify the operating principle and electrical characteristics of the proposed device, current density simulation and HBM simulation were performed using Synopsys' TCAD Simulation, and the operation of the additional self-biasing structure was confirmed. As a result of the simulation, it was confirmed that the proposed ESD protection device has a higher level of holding voltage compared to the existing ESD protection device. It is expected to have high area efficiency due to the dual structure and sufficient latch-up immunity in 12V-class applications.

A study of the kinematic characteristic of a coupling device between the buffer system and the flexible pipe of a deep-seabed mining system

  • Oh, Jae-Won;Lee, Chang-Ho;Hong, Sup;Bae, Dae-Sung;Cho, Hui-Je;Kim, Hyung-Woo
    • International Journal of Naval Architecture and Ocean Engineering
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    • v.6 no.3
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    • pp.652-669
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    • 2014
  • This paper concerns the kinematic characteristics of a coupling device in a deep-seabed mining system. This coupling device connects the buffer system and the flexible pipe. The motion of the buffer system, flexible pipe and mining robot are affected by the coupling device. So the coupling device should be considered as a major factor when this device is designed. Therefore, we find a stable kinematic device, and apply it to the design coupling device through this study. The kinematic characteristics of the coupling device are analyzed by multi-body dynamics simulation method, and finite element method. The dynamic analysis model was built in the commercial software DAFUL. The Fluid Structure Interaction (FSI) method is applied to build the deep-seabed environment. Hydrodynamic force and moment are applied in the dynamic model for the FSI method. The loads and deformation of flexible pipe are estimated for analysis results of the kinematic characteristics.

Behavior Analysis of Base Isolation With Anti-Uplift Device for Arch Structure by Numerical Analysis (아치구조물 적용 인장저항 면진장치의 수치해석적 거동 분석)

  • Kim, Gee-Cheol;Jang, Myung Ho
    • Journal of Korean Association for Spatial Structures
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    • v.20 no.3
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    • pp.99-106
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    • 2020
  • If an excessive displacement occurs in the base isolation system, the structure will be damaged due to overturning of the upper structure. In this study, we analyze the behavior of base isolation by applying earthquake to base isolation with anti-uplift device. In the case of structures that generate horizontal reaction forces such as arch structures, horizontal reaction forces must be considered in the design of the base isolation and structural members. And anti-uplift device for preventing the excessive displacement of the base isolation system is needed.