• Title/Summary/Keyword: device physics

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Improved Device Performance Due to AlxGa1-xAs Barrier in Sub-monolayer Quantum Dot Infrared Photodetector

  • Han, Im Sik;Byun, Young-Jin;Lee, Yong Seok;Noh, Sam Kyu;Kang, Sangwoo;Kim, Jong Su;Kim, Jun Oh;Krishna, Sanjay;Ku, Zahyun;Urbas, Augustine;Lee, Sang Jun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.298-298
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    • 2014
  • Quantum dot infrared photodetectors (QDIPs) based on Stranski-Krastanov (SK) quantum dots (QDs) have been widely explored for improved device performance using various designs of heterostructures. However, one of the biggest limitations of this approach is the "pancake" shape of the dot, with a base of 20-30 nm and a height of 4-6 nm. This limits the 3D confinement in the quantum dot and reduces the ratio of normal incidence absorption to the off-axis absorption. One of the alternative growth modes to the formation of SK QDs is a sub-monolayer (SML) deposition technique, which can achieve a much higher density, smaller size, better uniformity, and has no wetting layer as compared to the SK growth mode. Due to the advantages of SML-QDs, the SML-QDIP design has attractive features such as increased normal incidence absorption, strong in-plane quantum confinement, and narrow spectral wavelength detection as compared with SK-DWELL. In this study, we report on the improved device performance of InAs/InGaAs SML-QDIP with different composition of $Al_xGa1-_xAs$ barrier. Two SML-QDIPs (x=0.07 for sample A and x=0.20 for sample B) are grown with the 4 stacks 0.3 ML InAs. It is investigated that sample A with a confinement-enhanced (CE) $Al_{0.22}Ga_{0.78}As$ barrier had a single peak at $7.8{\mu}m$ at 77 K. However, sample B with an $Al_{0.20}Ga_{0.80}As$ barrier had three peaks at (${\sim}3.5{\mu}m$, ${\sim}5{\mu}m$, ${\sim}7{\mu}m$) due to various quantum confined transitions. The measured peak responsivities (see Fig) are ~0.45 A/W (sample A, at $7.8{\mu}m$, $V_b=-0.4V$ bias) and ~1.3 A/W (sample B, at $7{\mu}m$, $V_b=-1.5V$ bias). At 77 K, sample A and B had a detectivity of $1.2{\times}10^{11}cm.Hz^{1/2}/W$ ($V_b=-0.4V$ bias) and $5.4{\times}10^{11}cm.Hz^{1/2}/W$ ($V_b=-1.5V$ bias), respectively. It is obvious that the higher $D^*$ of sample B (than sample A) is mainly due to the low dark current and high responsivity.

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Deposition of ZnO Thin Films by RF Magnetron Sputtering and Cu-doping Effects (RF 마그네트론 스퍼터링에 의한 ZnO박막의 증착 및 구리 도우핑 효과)

  • Lee, Jin-Bok;Lee, Hye-Jeong;Seo, Su-Hyeong;Park, Jin-Seok
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.49 no.12
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    • pp.654-664
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    • 2000
  • Thin films of ZnO are deposited by using an RF magnetron sputtering with varying the substrate temperature(RT~39$0^{\circ}C$) and RF power(50~250W). Cu-doped ZnO(denoted by ZnO:Cu) films have also been prepared by co-spputtering of a ZnO target on which some Cu-chips are attached. Different substrate materials, such as Si, $SiO_{2}/Si$, sapphire, DLC/Si, and poly-diamond/Si, are employed to compare the c-axial growth features of deposited ZnO films. Texture coefficient(TC) values for the (002)-preferential growth are estimated from the XRD spectra of deposited films. Optimal ranges of RF powers and substrate temperatures for obtaining high TC values are determined. Effects of Cu-doping conditions, such as relative Cu-chip sputtering areas, $O_{2}/(Ar+O_{2})$ mixing ratios, and reactor pressures, on TC values, electrical resistivities, and relative Cu-compositions of deposited ZnO:Cu films have been systematically investigated. XPS study shows that the relative densities of metallic $Cu(Cu^{0})$ atoms and $CuO(Cu^{2+})$-phases within deposited films may play an important role of determining their electrical resistivities. It should be noted from the experimental results that highly resistive(> $10^{10}{\Omega}cm$ ZnO films with high TC values(> 80%) can be achieved by Cu-doping. SAW devices with ZnO(or Zn):Cu)/IDT/$SiO_{2}$/Si configuration are also fabricated to estimate the effective electric-mechanical coupling coefficient($k_{eff}^{2}$) and the insertion loss. It is observed that the devices using the Cu-doped ZnO films have a higher $k_{eff}^{2}$ and a lower insertion loss, compared with those using the undoped films.

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Soft-lithography for Manufacturing Microfabricated-Circuit Structure on Plastic Substrate (플라스틱기판 미세회로구조 제조를 위한 소프트 석판 기술의 적용)

  • Park, Min-Jung;Ju, Heong-Kyu;Park, Jin-Won
    • Korean Chemical Engineering Research
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    • v.50 no.5
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    • pp.929-932
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    • 2012
  • Novel platform technology has been developed to replace the photolithography used currently for manufacturing semiconductors and display devices. As a substrate, plastics, especially polycarbonates, have been considered for future application such as flexible display. Other plastics, i.e. polyimide, polyetheretherketon, and polyethersulfone developed for the substrate at this moment, are available for photolithography due to their high glass transition temperature, instead of high price. After thin polystyrene film was coated on the polycarbonate substrate, microstructure of the film was formed with polydimethylsiloxane template over the glass transition temperature of the polystyrene. The surface of the structure was treated with potassium permanganate and octadecyltrimethoxysilane so that the surface became hydrophobic. After this surface treatment, the nanoparticles dispersed in aqueous solution were aligned in the structure followed by evaporation of the DI water. Without the treatment, the nanoparticles were placed on the undesired region of the structure. Therefore, the interfacial interaction was also utilized for the nanoparticle alignment. The surface was analyzed using X-ray photoelectron spectrometer. The evaporation of the solvent occurred after several drops of the solution where the hydrophilic nanoparticles were dispersed. During the evaporation, the alignment was precisely guided by the physical structure and the interfacial interaction. The alignment was applied to the electric device.

Internal Components Arrangement of MR Damper Landing Gear for Cavitation Prevention (캐비테이션 방지를 위한 MR 댐퍼형 착륙장치의 내부 형상 배치에 대한 연구)

  • Joe, Bang-Hyun;Jang, Dae-Sung;Hwang, Jai-Hyuk
    • Journal of Aerospace System Engineering
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    • v.14 no.5
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    • pp.33-41
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    • 2020
  • The landing gear of an aircraft is a device that absorbs and dissipates shock energy transmitted from the ground to the fuselage. Among the landing gears, the semi-active MR damper landing gear is supposed to show high-shock absorption efficiency under various landing conditions and secure the stability when out of control. In the case of the MR damper landing gear using an annular channel rather than orifice, Amesim, a commercial multi-physics program, is considered as more useful than the conventional two-degree-of-freedom model because the damping force generated by the pressure drop through the flow annular path can cause cavitation in the low-pressure chamber of the MR damper with a specific internal structure. In this paper, the main dynamic characteristics of the MR damper landing gear with an annular type flow path structure has been analyzed under the condition of cavitation. Based on the analysis results using Amesim, a design guideline for the MR damper flow path that prevents cavitation has been proposed based on the modification of the arrangement of internal components of the damper. The guideline was verified through a drop simulation.

Growth and optical characteristics of the non-phosphor white LED by mixed-source HVPE (혼합소스 HVPE에 의한 비형광체 백색 LED의 성장과 광 특성)

  • Kim, E.J.;Jeon, H.S.;Hong, S.H.;Han, Y.H.;Lee, A.R.;Kim, K.H.;Ha, H.;Yang, M.;Ahn, H.S.;Hwang, S.L.;Cho, C.R.;Kim, S.W.
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.19 no.2
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    • pp.61-65
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    • 2009
  • In this paper, we report on the growth and optical characteristics of white-LED without fluorescent material. The growth of DH(double heterostructure) with AlGaN active layer was performed on a n-GaN/(0001) $Al_{2}O_{3}$ by the mixed-source HVPE and multi-sliding boat. The CRI(color rendering index) of packaging device charged in the range 72-93 with CIE chromaticity coordinates(x=$0.26{\sim}0.34$, y=$0.31{\sim}0.40$). And CCT(correlated color temperature) values was measured $5126{\sim}10406K$ with increasing injection current. The CIE point of conventional phosphor white LED shifts blue region, but cm point of non-phosphor white LED shifts opposite direction. These results show the mixed-source HVPE can be possible to newly fabricate method of phosphor free white LED with high CRI value.

Comparative analysis of fishing operation with the difference of deck layout of Korean coastal large trawler (우리나라 근해 대형트롤 어선의 갑판 레이아웃 차이에 따른 어로작업의 비교 분석)

  • Kim, Min-Son;Kang, Kyong-Mi;Lee, Ju-Hee;Shin, Hyeon-Ok
    • Journal of the Korean Society of Fisheries and Ocean Technology
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    • v.49 no.3
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    • pp.311-326
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    • 2013
  • For providing a basic data concerning with a fishing deck layout design of a trawler the authors conducted the video observations about the working activities of crews on the deck in the different layout of two Korean coastal large stern trawlers (gross tonnage: 139). The winch of the trawler-A was installed on the aft of the fishing deck and the trawler-B, on the forward of the fishing deck. The work and activities of the deck hands on both trawlers were observed using the CCD (charge coupled device) camera installed on each trawler's deck for one month from August 3, 2010. The video data was analyzed by the hierarchical task analysis (HTA) method. In results, numbers of tasks to require deck hands during the hauling net and the casting net were 25 and 28 for the trawler-A and 27 and 48 for the trawler-B, respectively. The working processes were represented a same in both of the trawlers. Location for controlling the deck machineries, the location installed trawl winch, kinds of deck machineries, crew's custom for using deck machineries were the factor affecting to the number of the task. In the case of the improvement suggested in the results is carried out, the reduction percentages of the number of task in the trawler-A and trawler-B were estimated as 24.5% and 51.3%, respectively. Through this study it was found that the quantitative analysis is possible for the work processes, work methods and the work contents in the trawler. Also the suggestion for improving the fishing deck layout design of the trawler was possible by finding out the factors increasing the number of tasks and removing the tasks. We expect that the results of this paper are used as a basic data for designing the layout of deck machineries in the trawler in the future.

Characteristics of bridge task in Korean coastal large trawler (우리나라 근해 대형트롤 어선의 선교업무 특성)

  • Kim, Min-Son;Shin, Hyeon-Ok;Lee, Ju-Hee;Hwang, Bo-Kyu
    • Journal of the Korean Society of Fisheries and Ocean Technology
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    • v.49 no.3
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    • pp.301-310
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    • 2013
  • To suggest a standard concerning with the arrangement of bridge equipment, the authors conducted the video observations with 3CCD (charge coupled device) cameras installed on the ceil of the bridge for monitoring the working activities of two bridge teams (the skipper/mate1 and the skipper/mate2) in a Korean coastal large trawler(gross tonnage: 139) for five days from July 30th. 2010 and analyzed of the data. Work elements coded by the work activities were input on the sheet of work analysis by the time unit of 1 sec according to the time occurred. A single work element among the work activities for every 5 minutes was denoted as the number of occurrence. The frequency of equipment usage was limited only in the usage of the equipment. In the case of the navigation and the towing net two ranks were integrated and analyzed. On the other hand, in the case of the casting net and the hauling net, two processes were integrated to as one and then analyzed separately as two ranks. As the results, 15 elements of work was carried out between two bridge teams for the observation; lookout, radar, GPS plotter, fish finder, net monitor, fishing deck, RPM indicator, rudder angle indicator, compass card, for maneuver; steering, ship speed control, trawl winch operation and external communications, paper works and others. It was found that the work load of the skipper per 5 minutes accordance with the navigation, the casting net, the towing net and the hauling net are 20.5 times, 11.9 times, 38.0 times and 9.5 times respectively, the mates are 65.2 times, 66.5 times, 85.7 times and 59.1 times respectively. The radar was shown the highest frequency of the equipment usage and the next was the fish finder, the GPS plotter and the external communications in the case of the navigation. In the case of the towing net the frequency of usage was high the ranking as the radar, the net monitor, the fish finder, the GPS plotter, the steering system and the external communications. In the case of the integrated process both of the casting and hauling net the trawl winch was shown the highest frequency to the skipper and the next was the GPS plotter and the radar, and the steering system was shown the highest frequency to the mate and the next was the radar, the ship speed control system, the GPS plotter, the net monitor and the fish finder.

HVPE growth of Mg-doped AlN epilayers for high-performance power-semiconductor devices (고효율 파워 반도체 소자를 위한 Mg-doped AlN 에피층의 HVPE 성장)

  • Bae, Sung Geun;Jeon, Injun;Yang, Min;Yi, Sam Nyung;Ahn, Hyung Soo;Jeon, Hunsoo;Kim, Kyoung Hwa;Kim, Suck-Whan
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.27 no.6
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    • pp.275-281
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    • 2017
  • AlN is a promising material for wide band gap and high-frequency electronics device due to its wide bandgap and high thermal conductivity. AlN has advantages as materials for power semiconductors with a larger breakdown field, and a smaller specific on-resistance at high voltage. The growth of a p-type AlN epilayer with high conductivity is important for a manufacturing an AlN-based applications. In this paper, Mg doped AlN epilayers were grown by a mixed-source HVPE. Al and Mg mixture were used as source materials for the growth of Mg-doped AlN epilayers. Mg concentration in the AlN was controlled by modulating the quantity of Mg source in the mixed-source. Surface morphology and crystalline structure of AlN epilayers with different Mg concentrations were characterized by FE-SEM and HR-XRD. XPS spectra of the Mg-doped AlN epilayers demonstrated that Mg was doped successfully into the AlN epilayer by the mixed-source HVPE.

Study of 4π Compton Suppression Spectrometer by Monte Carlo Simulation (몬테카를로 시뮬레이션을 통한 4π 컴프턴 억제 분광기 연구)

  • Jang, Eun-Sung;Lee, Hyo-Yeong
    • Journal of the Korean Society of Radiology
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    • v.11 no.3
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    • pp.123-129
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    • 2017
  • Compton suppression apparatus using the Compton scattering response, by inhibiting part of the spectrum Compton continuum Compton continuum in the area of the peak analysis of the gamma rays that enables a clearer device. In order to find out the geometry structure of high-purity germanium detector(HPGe) -NaI(TI) and to optimize the effect of movement, Monte Carlo simulation was used to grasp the behavioral characteristics of Compton suppression and compare several layout structures. And applied to the cylinder beaker used for the environmental measurement by using the efficiency according to the distance. For the low-energy source such as 81 keV, the Compton continuum is scarcely developed and the suppression effect is also insignificant because the scattering cross-section of the Compton effect is relatively low. In the spectrum for the remaining energy, it can be seen that the Compton continuum part is suppressed in a certain energy range. Compton suppression effect was not significantly different from positional shift. average reduction factor(ARF) value was about 1.08 for 81 keV and about 1.23 for 1332.4keV energy at the highest value. It can be seen that suppression over the Compton continuum region of the energy spectrum is a more appropriate arrangement. Therefore, it can be applied to various environmental sample measurement through optimized structure.

Development of Optical Molecular Imaging System for the Acquisition of Bioluminescence Signals from Small Animals (소동물 발광영상 측정을 위한 광학분자영상기기의 개발)

  • Lee, Byeong-Il;Kim, Hyeon-Sik;Jeong, Hye-Jin;Lee, Hyung-Jae;Moon, Seung-Min;Kwon, Seung-Young;Choi, Eun-Seo;Jeong, Shin-Young;Bom, Hee-Seung;Min, Jung-Joon
    • Nuclear Medicine and Molecular Imaging
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    • v.43 no.4
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    • pp.344-351
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    • 2009
  • Purpose: Optical imaging is providing great advance and improvement in genetic and molecular imaging of animals and humans. Optical imaging system consists of optical imaging devices, which carry out major function for monitoring, tracing, and imaging in most of molecular in-vivo researches. In bio-luminescent imaging, small animals containing luciferase gene locally irradiate light, and emitted photons transmitted through skin of the small animals are imaged by using a high sensitive charged coupled device (CCD) camera. In this paper, we introduced optical imaging system for the image acquisition of bio-luminescent signals emitted from small animals. Materials and Methods: In the system, Nikon lens and four LED light sources were mounted at the inside of a dark box. A cooled CCD camera equipped with a control module was used. Results: We tested the performance of the optical imaging system using effendorf tube and light emitting bacteria which injected intravenously into CT26 tumor bearing nude mouse. The performance of implemented optical imaging system for bio-luminescence imaging was demonstrated and the feasibility of the system in small animal imaging application was proved. Conclusion: We anticipate this system could be a useful tool for the molecular imaging of small animals adaptable for various experimental conditions in future.