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http://dx.doi.org/10.6111/JKCGCT.2017.27.6.275

HVPE growth of Mg-doped AlN epilayers for high-performance power-semiconductor devices  

Bae, Sung Geun (Department of Electronic Material Engineering, Korea Maritime and Ocean University)
Jeon, Injun (Department of Electronic Material Engineering, Korea Maritime and Ocean University)
Yang, Min (Department of Electronic Material Engineering, Korea Maritime and Ocean University)
Yi, Sam Nyung (Department of Electronic Material Engineering, Korea Maritime and Ocean University)
Ahn, Hyung Soo (Department of Electronic Material Engineering, Korea Maritime and Ocean University)
Jeon, Hunsoo (Department of Electronic Material Engineering, Korea Maritime and Ocean University)
Kim, Kyoung Hwa (Department of Electronic Material Engineering, Korea Maritime and Ocean University)
Kim, Suck-Whan (Department of Physics, Andong National University)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.27, no.6, 2017 , pp. 275-281 More about this Journal
Abstract
AlN is a promising material for wide band gap and high-frequency electronics device due to its wide bandgap and high thermal conductivity. AlN has advantages as materials for power semiconductors with a larger breakdown field, and a smaller specific on-resistance at high voltage. The growth of a p-type AlN epilayer with high conductivity is important for a manufacturing an AlN-based applications. In this paper, Mg doped AlN epilayers were grown by a mixed-source HVPE. Al and Mg mixture were used as source materials for the growth of Mg-doped AlN epilayers. Mg concentration in the AlN was controlled by modulating the quantity of Mg source in the mixed-source. Surface morphology and crystalline structure of AlN epilayers with different Mg concentrations were characterized by FE-SEM and HR-XRD. XPS spectra of the Mg-doped AlN epilayers demonstrated that Mg was doped successfully into the AlN epilayer by the mixed-source HVPE.
Keywords
Mixed-source; HVPE; Mg doped AlN; Power semiconductor devices;
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Times Cited By KSCI : 2  (Citation Analysis)
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