• Title/Summary/Keyword: device performance parameters

Search Result 419, Processing Time 0.022 seconds

A Study on Three Degree-of-Freedom Fine Positioning Device Based on Electromagnetic Force (전자기력을 이용한 3 자유도 정밀 위치결정기구에 관한 연구)

  • 이기하;최기봉;박기환;김수현;곽윤근
    • Journal of the Korean Society for Precision Engineering
    • /
    • v.15 no.11
    • /
    • pp.199-207
    • /
    • 1998
  • This paper presents the design and the control of three degree-of-freedom(DOF) fine positioning device based on an electro-magnetic force. The device is designed by use of a magnetic circuit theory and it is capable of fine motion due to the electro-magnetic force. The device consists of permanent magnets, yokes and coils. The magnetic fluxes generated from the permanent magnets constitute magnetic paths through steel, whereas the coils are arranged into the gap between two surfaces of the yokes. Therefore, by supplying current to the coils, the coils are capable of some motions due to Lorentz forces. For the optimal design of the actuating system, the system parameters are defined and investigated under the given constraints. From the system modeling in small displacement, three decoupled equations of motion are obtained. To get better performance of the system, a PID controller is implemented. Experimental results are presented in terms of time response and accuracy.

  • PDF

Efficiency Improvement of Organic Solar Cells Using Two-step Annealing Technique

  • Masood, Bilal;Haider, Arsalan;Nawaz, Tehsin
    • Transactions on Electrical and Electronic Materials
    • /
    • v.17 no.3
    • /
    • pp.134-138
    • /
    • 2016
  • The fullerene solar cells are becoming a feasible choice due to the advanced developments in donor materials and improved fabrication techniques of devices. Recently, sufficient optimization and improvements in the processing techniques like incorporation of solvent vapor annealing (SVA) with additives in solvents has become a major cause of prominent improvements in the performance of organic solar cell-based devices . On the other hand, the challenge of reduced open circuit voltage (Voc) remains. This study presents an approach for significant performance improvement of overall device based on organic small molecular solar cells (SMSCs) by following a two step technique that comprises thermal annealing (TA) and SVA (abbreviated as SVA+TA). In case of exclusive use of SVA, reduction in Voc can be eliminated in an effective way. The characteristics of charge carriers can be determined by the measurement of transient photo-voltage (TPV) and transient photo-current (TPC) that determines the scope for improvement in the performance of device by two step annealing. The recovery of reduced Voc is linked with the necessary change in the dynamics of charge that lead to increased overall performance of device. Moreover, SVA and TA complement each other; therefore, two step annealing technique is an appropriate way to simultaneously improve the parameters such as Voc, fill factor (FF), short circuit current density (Jsc) and PCE of small molecular solar cells.

Thermal and Flow Modeling and Fin Structure Optimization of an Electrical Device with a Staggered Fin (엇갈림 휜을 갖는 전자기기의 열유동 모델링 및 휜 형상 최적 설계)

  • Kim, Chiwon;Lee, Kwan-Soo;Yeo, Moon Su
    • Korean Journal of Air-Conditioning and Refrigeration Engineering
    • /
    • v.29 no.12
    • /
    • pp.645-653
    • /
    • 2017
  • Thermal and flow modeling and fin structure optimization were performed to reduce the weight of an electrical device with a staggered fin. First, a numerical model for thermal and flow characteristics was suggested, and then, the model was verified experimentally. Using the verified model, improvement in cooling performance of the cooling system through the staggered fins was predicted. As a result, 87.5% of total heat generated was dissipated through the cooling fins, and a thermal island was observed in the rotor because of low velocity of the internal air flow through the air gap. In addition, it was confirmed that the staggered fin improves the cooling performance but it also increases the total pressure drop within the cooling system, by maximizing the leading edge effect. Based on this analysis result, the effect of each design parameter on the thermal and flow characteristics was analyzed to select the main optimal design parameters, and multi-objective optimization was performed by considering the cooling performance and the fin weight. In conclusion, the optimized fin structure improved the cooling performance by 7% and reduced the fin weight by 28% without any compromise of the pressure drop.

A Parametric Study on the Characteristics of the Oil-Lubricated Wave Journal Bearing

  • Suh, Hyun-Seung;Rhim, Yoon-Chul
    • KSTLE International Journal
    • /
    • v.2 no.1
    • /
    • pp.59-64
    • /
    • 2001
  • A new bearing concept, the wave journal bearing, has been developed to improve the static and dynamic performance of a hydrodynamic journal bearing. This concept features a wave in bearing surface. Not only straight but also twisted wave journal bearings are investigated numerically. The performances of straight and twisted bearings are compared to a plain journal bearing over a wide range of eccentricity. The bearing load and stability characteristics are dependent on the geometric parameters such as the number of waves, the amplitude and the starting point of the wave relative to the applied load direction. The bearing performance is analyzed for various configurations and for both cases of smooth and wave member notation. The wave journal bearing, especially for the twisted one, offers better stability than the plain journal bearing under all eccentricity ratios and load orientation.

  • PDF

Temperature Dependence of Electrical Parameters of Silicon-on-Insulator Triple Gate n-Channel Fin Field Effect Transistor

  • Boukortt, Nour El Islam;Hadri, Baghdad;Caddemi, Alina;Crupi, Giovanni;Patane, Salvatore
    • Transactions on Electrical and Electronic Materials
    • /
    • v.17 no.6
    • /
    • pp.329-334
    • /
    • 2016
  • In this work, the temperature dependence of electrical parameters of nanoscale SOI (silicon-on-insulator) TG (triple gate) n-FinFET (n-channel Fin field effect transistor) was investigated. Numerical device simulator $ATLAS^{TM}$ was used to construct, examine, and simulate the structure in three dimensions with different models. The drain current, transconductance, threshold voltage, subthreshold swing, leakage current, drain induced barrier lowering, and on/off current ratio were studied in various biasing configurations. The temperature dependence of the main electrical parameters of a SOI TG n-FinFET was analyzed and discussed. Increased temperature led to degraded performance of some basic parameters such as subthreshold swing, transconductance, on-current, and leakage current. These results might be useful for further development of devises to strongly down-scale the manufacturing process.

Metal Insulator Gate Geometric HEMT: Novel Attributes and Design Consideration for High Speed Analog Applications

  • Gupta, Ritesh;Kaur, Ravneet;Aggarwal, Sandeep Kr;Gupta, Mridula;Gupta, R.S.
    • JSTS:Journal of Semiconductor Technology and Science
    • /
    • v.10 no.1
    • /
    • pp.66-77
    • /
    • 2010
  • Improvement in breakdown voltage ($BV_{ds}$) and speed of the device are the key issues among the researchers for enhancing the performance of HEMT. Increased speed of the device aspires for shortened gate length ($L_g$), but due to lithographic limitation, shortening $L_g$ below sub-micrometer requires the inclusion of various metal-insulator geometries like T-gate onto the conventional architecture. It has been observed that the speed of the device can be enhanced by minimizing the effect of upper gate electrode on device characteristics, whereas increase in the $BV_{ds}$ of the device can be achieved by considering the finite effect of the upper gate electrode. Further, improvement in $BV_{ds}$ can be obtained by applying field plates, especially at the drain side. The important parameters affecting $BV_{ds}$ and cut-off frequency ($f_T$) of the device are the length, thickness, position and shape of metal-insulator geometry. In this context, intensive simulation work with analytical analysis has been carried out to study the effect of variation in length, thickness and position of the insulator under the gate for various metal-insulator gate geometries like T-gate, $\Gamma$-gate, Step-gate etc., to anticipate superior device performance in conventional HEMT structure.

Oil Carrier, Development of on Optimized Anti-Splash Device Model for COT Vent Pipe (유조선, COT Vent Pipe용 Anti-Splash Device 최적 모델 개발)

  • Na, Ok-kyun;Jeon, Young-Soo;Park, Sin-kil;Kim, Jong-Ho
    • Special Issue of the Society of Naval Architects of Korea
    • /
    • 2015.09a
    • /
    • pp.50-55
    • /
    • 2015
  • Application of newly conceptualized Anti-Splash Devices designed for COT vent pipes were studied on a P/V valve located on the upper deck of an oil carrier vessel. Anti-Splash devices are used in the shipbuilding industry in order to avoid oil overflow and spray accidents caused by excess pressure and vacuum condition in the cargo oil tanks. These conditions are caused by the transverse and longitudinal sloshing forces that arise from ship motion during sea voyages. The main issue with existing Anti-Splash device model is flux at the outlet of the Anti-Splash Device, and so, new conceptual models for the Anti-Splash device were developed and compared to existing Anti-Splash device model using CFD analysis. Transient analysis was used to capture the flow and velocity of each model and a comparative analysis was performed between old and new-concept models. This data was used to determine the optimal design parameters in order to develop an optimized Anti-Splash Device. A Factory acceptance test was performed on the new-concept models in order to verify the performance and efficiency against their design requirements and other criterion. The final step performed was to apply the optimized Anti-Splash Device models for COT vent pipes to an actual vessel and verify performance through a seawater cargo operation during a sea voyage as per the ship owner's request. The patent for the aforementioned device was obtained by the Korean Intellectual property Office dated Dec. 18th,2014.

  • PDF

Effect of Some Parameters on Ground Effective Thermal Conductivity (지중열교환기 설치 조건이 지중 유효 열전도도에 미치는 영향)

  • Choi, Jae-Ho;Lim, Hyo-Jae;Kong, Hyoung-Jin;Sohn, Byong-Hu
    • Proceedings of the SAREK Conference
    • /
    • 2008.11a
    • /
    • pp.33-38
    • /
    • 2008
  • A ground-loop heat exchanger in a ground source heat pump system is an important unit that determines the thermal performance of a system and its initial cost. The Size and performance of this heat exchanger is highly dependent on ground thermal properties. A proper design requires certain site-specific parameters, most importantly the ground effective thermal conductivity, the borehole thermal resistance and the undisturbed ground temperature. This study was performed to investigate the effect of some parameters such as borehole lengths, various grouting materials and U-tube configurations on ground effective thermal conductivity. In this study, thermal response tests were conducted using a testing device with 9-different ground-loop heat exchangers. From the experimental results, the length of ground-loop heat exchanger affects to the effective thermal conductivity. Among the various grouting materials, the bentonite-based grout with silica sand shows the largest thermal conductivity value.

  • PDF

A study on the cyclic variability as a function of ignition energy in spark ignition engines (스파크 점화기관의 점화에너지 변화와 연소 변동과의 관계에 관한 연구)

  • Han, Seong-Bin
    • Transactions of the Korean Society of Mechanical Engineers B
    • /
    • v.21 no.12
    • /
    • pp.1647-1655
    • /
    • 1997
  • The cyclic variations can be characterized by the variations in different type of parameters. These parameters may be grouped into four main categories: pressure-related parameters, combustion-related parameters, flame front-related parameters, and exhaust gas-related parameters. One of the resultant effects of the cycle-by-cycle variation in the combustion process, which is the most important with regard to the engine performance characteristics, is the cycle-by-cycle variation in IMEP. This paper uses the repetitive discharge igniter, which can change the ignition energy easily, to study on idle stability in a spark ignition engine. From this device, the 6 number of spark and 0.20 ms spark interval, it is very available for the idle stability.

Domain Size and Density in Graphene Grown with Different CVD Growth

  • Gang, Cheong;Jeong, Da-Hui;Nam, Ji-Eun;Lee, Jin-Seok
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2013.08a
    • /
    • pp.264.1-264.1
    • /
    • 2013
  • Graphene is a two-dimensional carbon material whose structure is one-atom-thick planar sheet of sp2-bonded carbon atoms densely packed in a honeycomb crystal lattice. It has drawn significant attention with its distinguished structural and electrical properties. Extremely high mobility and a tunable band gap make graphene potentially useful for innovative approaches to electronics. Although mechanical exfoliation of graphite and decomposition of SiC surfaces upon thermal treatment have been the main method for graphene, they have some limitations in quality and scalability of as-produced graphene films. Solutionphase and solvothermal syntheses of graphene achieved a major improvement for processing, however for device fabrication, a reproducible method such as chemical vapor deposition (CVD) growth yielding high quality films of controlled thickness is required. In this research, we synthesized hexagonal graphene flakes on Cu foils by CVD method and controlled its coverage, density and the size of graphene domains by changing reaction parameters. It is important to control these parameters of graphene growth during synthesis in order to achieve tunable properties and optimized device performance.

  • PDF