• 한국결정학회지
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• 제12권3호
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• pp.162-165
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• 2001

The EDL (Embedded DRAM and Logic) technologies with stack cell capacitors based on NO dielectric and Co-silicided source/drain junctions using a Ti capping material, were successfully implemented. The employed Co-silicided film exhibited junction leakage characteristics comparable to those of non-silicided junctions. Improved device characteristics without degradation of I/sub off/ was also achieved.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.489-492
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• 1999

The effects of alternate bias stress on p-channel poly-Si TPT's has been systematically investigated. It has been shown that the application of alternate bias stress affects device degradation for the negative bias stress as well as device improvement for the positive bias stress. This effects have been related to the hot carrier injection into the gate oxide rather than the generation of defect states within the poly-Si/SiO$_2$ under bias stress.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.1254-1257
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• 2004

Comparative study on the effects of $H_2$ vs. $O_2$ plasma pretreatment of gate oxide on the degradation phenomenon of p-channel low-temperature polysilicon (LTPS) thin-film transistors (TFTs) were performed. After high drain current stress (HDCS) with $V_{gs}$ = $V_{ds}$, the p-channel TFTs pretreated by $O_2$ plasma showed increased immunity to the degradation of device characteristics such as threshold voltage and maximum field effect mobility because of the higher binding energy of Si-O bond than that of Si-H bond. The investigation of degradation phenomenon of these parameters with the applied power suggests that self-heating can be the major cause of degradation of polysilicon TFTs.

• ETRI Journal
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• 제25권3호
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• pp.203-209
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• 2003

This paper reports on our investigation of DC and RF characteristics of p-channel metal oxide semiconductor field effect transistors (pMOSFETs) with a compressively strained $Si_{0.8}Ge_{0.2}$ channel. Because of enhanced hole mobility in the $Si_{0.8}Ge_{0.2}$ buried layer, the $Si_{0.8}Ge_{0.2}$ pMOSFET showed improved DC and RF characteristics. We demonstrate that the 1/f noise in the $Si_{0.8}Ge_{0.2}$ pMOSFET was much lower than that in the all-Si counterpart, regardless of gate-oxide degradation by electrical stress. These results suggest that the $Si_{0.8}Ge_{0.2}$ pMOSFET is suitable for RF applications that require high speed and low 1/f noise.

• 전자공학회논문지A
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• 제30A권2호
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• pp.53-63
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• 1993

Device degradations by the Fowler-Nordheim tunneling have been studide. The changes of device characteristics such as the threshold voltage, subthreshold slope, I-.or. curves have been measured after bidirectionally stressing n-channel MOSFET's and p-channel MOSFET's. Also the interface states have been directly measured by the charge pumping methodIt is shown that the change of interface states is determined by the number of hole carriers tunneling the gate oxide and electrons which are trapped in the gate oxide. Also, in this paper, we propose a model for device lifetime limited by the increase of interface states.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 하계종합학술대회 논문집(2)
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• pp.327-330
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• 2004

It is shown that the hot carrier degradation due to enhanced hot holes trapping dominates PMOSFETs lifetime both in thin and thick devices. Moreover, it is found that in 0.13 ${\mu}m$ CMOSFET the PMOS lifetime under CHC (Channel Hot Carrier) stress is lower than the NMOSFET lifetime under DAHC (Drain Avalanche Hot Carrier) stress. Therefore. the interface trap generation due to enhanced hot hole injection will become a dominant degradation factor. In case of thick MOSFET, the degradation by hot carrier is confirmed using charge pumping current method and highly necessary to enhance overall device lifetime or circuit lifetime in upcoming nano-scale CMOS technology.

• 전자공학회논문지A
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• 제30A권2호
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• pp.36-45
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• 1993

The n-channel MOSFETs with gate-$n^{-}$S/D overlapped structure have been fabricated by ITLDD(inverse-T gate lightly doped drain) technology. The gate length(L$_{mask}$) was 0.8$\mu$m. The degradation effects of hot carriers injected into the gate oxide were analyzed in terms of threshold voltage, transconductance and drain current variations. The degradation dependences on the gate voltage and drain voltage were characterized. The devices with higher n-concentration showed higher resistivity against the hot carrier injection. As the results of investigating the lifetime of the device, the lifetime showed longer than 10 years at V$_{d}$ = 5V for the overlapped devices with the implantation of an phosphorus dose of 5$\times$10$^{13}$ cm$^{-2}$ and an energy of 80 keV in the n$^{-}$resion.

• 한국정보통신설비학회:학술대회논문집
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• 한국정보통신설비학회 2009년도 정보통신설비 학술대회
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• pp.15-18
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• 2009

In recent years electric devices and telecommunication facilities were often damaged by surge generated lightning discharge. When the service was interrupted by failure of electrical devices due to surge the social loss is very enormous. Therefore in order to protect electrical systems against lightning, SPDs(Surge protective device) have been used But damaged SPDs often make some troubles like fire and interrupt of service. In this work, 3rd harmonic leakage current defection method was applied as the diagnosis of SPD degradation and the effectiveness of this method was verified by field survey.

• 전자공학회논문지D
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• 제34D권11호
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• pp.30-36
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• 1997

AlGaAs/GaAs HBTs are developed well enough to be commercialized as an active device in optical transmission system, but there remains the unanswered questions about reliability. In this paper we applied the reverse constant current stress at the high voltage in avalanche region for a long time to find out a new degradation mechanism of junctrion I-V. The unction off-set voltage at which the current vanishes to zero was shifted to the negative direction of applied bias due to the increment of leakage current as the stress time increases. It was identified that the degradation was induced by the hot carriers which were generated at space charge region and trapped at the interface between GaAs base and the passivation nitride enhancing the electric field across the nesa edge.

• 한국신뢰성학회지:신뢰성응용연구
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• 제13권2호
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• pp.129-140
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• 2013

As a fundamental experimental study for reliability improvement of lithium ion secondary battery, degradation mechanism was investigated by microscopic observation and acoustic emission monitoring. Microstructural observation of the decomposed battery after cycle test revealed mechanical and chemical damages such as interface delamination, microcrack of the electrodes, and solid electrolyte interphase (SEI). Acoustic emission (AE) signal was detected during charge and discharge of lithium ion battery to investigate relationships among cumulative count, discharge capacity, and microdamages. With increasing number of cycle, discharge capacity was decreased and AE cumulative count was observed to increase. Observed damages were attributed to sources of the detected AE signals.