ETRI Journal

Electronics and Telecommunications Research Institute (한국전자통신연구원)
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DC and RF Characteristics of $Si_{0.8}Ge_{0.2}$ pMOSFETs: Enhanced Operation Speed and Low 1/f Noise

  • Song, Young-Joo (Wireless Communication Device Research Department, ETRI) ;
  • Shim, Kyu-Hwan (Wireless Communication Device Research Department, ETRI) ;
  • Kang, Jin-Young (Wireless Communication Device Research Department, ETRI) ;
  • Cho, Kyoung-Ik (Wireless Communication Device Research Department, ETRI)
  • Received : 2002.11.07
  • Published : 2003.06.30
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Abstract

This paper reports on our investigation of DC and RF characteristics of p-channel metal oxide semiconductor field effect transistors (pMOSFETs) with a compressively strained $Si_{0.8}Ge_{0.2}$ channel. Because of enhanced hole mobility in the $Si_{0.8}Ge_{0.2}$ buried layer, the $Si_{0.8}Ge_{0.2}$ pMOSFET showed improved DC and RF characteristics. We demonstrate that the 1/f noise in the $Si_{0.8}Ge_{0.2}$ pMOSFET was much lower than that in the all-Si counterpart, regardless of gate-oxide degradation by electrical stress. These results suggest that the $Si_{0.8}Ge_{0.2}$ pMOSFET is suitable for RF applications that require high speed and low 1/f noise.

Keywords

References

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