Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
권호 표지

Characterization of Hot Carrier Mechanism of Nano-Scale CMOSFETs

나노급 소자의 핫캐리어 특성 분석

  • Na Jun-Hee (Electrical and Computer Engineering Chungnam National University) ;
  • Choi Seo-Yun (Electrical and Computer Engineering Chungnam National University) ;
  • Kim Yong-Goo (Electrical and Computer Engineering Chungnam National University) ;
  • Lee Hi-Deok (Electrical and Computer Engineering Chungnam National University)
  • 나준희 (충남대학교 전기정보통신공학부) ;
  • 최서윤 (충남대학교 전기정보통신공학부) ;
  • 김용구 (충남대학교 전기정보통신공학부) ;
  • 이희덕 (충남대학교 전기 정보통신공학부)
  • Published : 2004.06.01
Download PDF
⟨ Previous Next ⟩

Abstract

It is shown that the hot carrier degradation due to enhanced hot holes trapping dominates PMOSFETs lifetime both in thin and thick devices. Moreover, it is found that in 0.13 ${\mu}m$ CMOSFET the PMOS lifetime under CHC (Channel Hot Carrier) stress is lower than the NMOSFET lifetime under DAHC (Drain Avalanche Hot Carrier) stress. Therefore. the interface trap generation due to enhanced hot hole injection will become a dominant degradation factor. In case of thick MOSFET, the degradation by hot carrier is confirmed using charge pumping current method and highly necessary to enhance overall device lifetime or circuit lifetime in upcoming nano-scale CMOS technology.

Keywords