• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.8
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• pp.687-694
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• 2008

This paper is focused on the improvement of MOS device reliability related to deuterium process. The injection of deuterium into the gate oxide film was achieved through two kind of method, high-pressure annealing and low-energy implantation at the back-end of line, for the purpose of the passivation of dangling bonds at $SiO_2/Si$ interface. Experimental results are presented for the degradation of 3-nm-thick gate oxide ($SiO_2$) under both negative-bias temperature instability (NBTI) and hot-carrier injection (HCI) stresses using P and NMOSFETs. Annealing process was rather difficult to control the concentration of deuterium. Because when the concentration of deuterium is redundant in gate oxide excess traps are generated and degrades the performance, we found annealing process did not show the improved characteristics in device reliability, compared to conventional process. However, deuterium ion implantation at the back-end process was effective method for the fabrication of the deuterated gate oxide. Device parameter variations under the electrical stresses depend on the deuterium concentration and are improved by low-energy deuterium implantation, compared to conventional process. Our result suggests the novel method to incorporate deuterium in the MOS structure for the reliability.

• Transactions on Electrical and Electronic Materials
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• v.13 no.4
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• pp.188-191
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• 2012

This paper introduces a new method regarding deuterium incorporation in the gate dielectric including deuterium implantation and post-annealing at the back-end-of-the process line. The control device and the deuterium furnace-annealed device were also prepared for comparison with the implanted device. It was observed that deuterium implantation at a light dose of $1{\times}10^{12}-1{\times}10^{14}/cm^2$ at 30 keV reduced hot-carrier injection (HCI) degradation and negative bias temperature instability (NBTI) within our device structure due to the reduction in oxide charge and interface trap. Deuterium implantation provides a possible solution to enhance the bulk and interface reliabilities of the gate oxide under the electrical stress.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.7
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• pp.23-31
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• 2008

Experiment results are presented for gate oxide degradation under the constant voltage stress conditions using MOSFETs with 3-nm-thick gate oxides that are treated by deuterium gas. Two kinds of methods, annealing and implantation, are suggested for the effective deuterium incorporation. Annealing process was rather difficult to control the concentration of deuterium. Because the excess deuterium in gate oxide could be a precursor for the wear-out of gate oxide film, we found annealing process did not show improved characteristics in device reliability, compared to conventional process. However, deuterium implantation at the back-end process was effective method for the deuterated gate oxide. Device parameter variations as well as the gate leakage current depend on the deuterium concentration and are improved by low-energy deuterium implantation, compared to those of conventional process. Especially, we found that PMOSFET experienced the high voltage stress shows a giant isotope effect. This is likely because the reaction between "hot" hole and deuterium is involved in the generation of oxide trap.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.4
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• pp.13-19
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• 2010

MOSFET with deuterium-incorporated gate oxide shows enhanced reliability compared to conventional MOSFET. We present an alternative process whereby deuterium is delivered to the location where the gate oxide reside by an implantation process. Deuterium ions were implanted using two different energies to account for the topography of the overlaying layers and placing the D peak at the top of gate oxide. A short anneal at forming gas was performed to remove the D-implantation damage. We have observed that deuterium ion implantation into the gate oxide region can successfully remove the interface states and the bulk defects. But the energy and the dose of the deuterium implant need to be optimized to maintain the Si substrates dopant activation, while generating deuterium bonds inside gate oxide. CV and IV characteristics studies also determined that the deuterium implant dose not degrade the transistor performance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.8
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• pp.609-615
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• 2011

This paper is studied for the improvement of the characteristics of gate oxide with 3-nm-thick gate oxide by deuterium ion implantation methode. Deuterium ions were implanted to account for the topography of the overlaying layers and placing the D peak at the top of gate oxide. A short anneal at forming gas to nitrogen was performed to remove the damage of D-implantation. We simulated the deuterium ion implantation to find the optimum condition by SRIM (stopping and range of ions in matter) tool. We got the optimum condition by the results of simulation. We compare the electrical characteristics of the optimum condition with others terms. We also analyzed the electrical characteristics to change the annealing conditions after deuterium ion implantation. The results of the analysis, the breakdown time of the gate oxide was prolonged in the optimum condition. And a variety of annealing, we realized the dielectric property that annealing is good at longer time. However, the high temperature is bad because of thermal stress.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.6-6
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• 2009

We present an alternative process whereby deuterium is delivered to the location where the gate oxide reside by an implantation process. Deuterium ions were implanted using different energies to account for the topography of the overlaying layers and placing the D peak at the top of gate oxide. A short anneal at forming gas was performed to remove the D-implantation damage. We have observed that deuterium ion implantation into the gate oxide region can successfully remove the interface states and the bulk defects.

• Carbon letters
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• v.13 no.4
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• pp.248-253
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• 2012

Dielectrophoretic filtering and alignment of single-walled carbon nanotubes (SWCNTs) were tested using deuterium oxide as a solvent. A solution of deuterium oxide-SWCNTs was dropped on top of a silicon chip and an ac electric field was applied between pre-defined electrodes. Deuterium oxide was found to be a better solvent than hydrogen oxide for the dielectrophoresis process with higher efficiency of filtering. This was demonstrated by comparing Raman spectra measured on the initial solution with those measured on the filtered solution. We found that the aligned nanotubes along the electric field were not deposited on the substrate but suspended in solution, forming chain-like structures along the field lines. This so-called pearl chain formation of CNTs was verified by electrical measurements through the aligned tubes. The solution was frozen in liquid nitrogen prior to the electrical measurements to maintain the chain formation. The current-voltage characteristics for the sample demonstrate the existence of conduction channels in the solution, which are associated with the SWCNT chain structures.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.11
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• pp.996-1000
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• 2005

Experimental results are presented for the degradation of 3 nm-thick gate oxide $(SiO_2)$ under both Negative-bias Temperature Instability (NBTI) and Hot-carrier-induced (HCI) stresses using P and NMOSFETS, The devices are annealed with hydrogen or deuterium gas at high-pressure $(1\~5\;atm.)$ to introduce higher concentration in the gate oxide. Both interface trap and oxide bulk trap are found to dominate the reliability of gate oxide during electrical stress. The degradation mechanism depends on the condition of electrical stress that could change the location of damage area in the gate oxide. It was found the trap generation in the gate oxide film is mainly related to the breakage of Si-H bonds in the interface or the bulk area. We suggest that deuterium bonds in $SiO_2$ film are effective in suppressing the generation of traps related to the energetic hot carriers.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.11
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• pp.7-13
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• 2004

Experimental results are presented for the degradation of 3 nm-thick gate oxide under -2.5V $\leq$ V$_{g}$ $\leq$-4.0V stress and 10$0^{\circ}C$ conditions using P and NMOSFETs that are annealed with hydrogen or deuterium gas at high-pressure (5 atm). The degradation mechanisms are highly dependent on stress conditions. For low gate voltage, hole-trapping is found to dominate the reliability of gate oxide both in P and NMOSFETs. With increasing gate voltage to V$_{g}$ =-4.0V, the degradation becomes dominated by electron-trapping in NMOSFETs, however, the generation rate of "hot" hole was very low, because most of tunneling electrons experienced the phonon scattering before impact ionization at the Si interface. Statistical parameter variations as well as the gate leakage current depend on and are improved by high-pressure deuterium annealing, compared to corresponding hydrogen annealing. We therefore suggest that deuterium is effective in suppressing the generation of traps within the gate oxide. Our results therefore prove that hydrogen related processes are at the origin of the investigated oxide degradation.gradation.

• Asian-Australasian Journal of Animal Sciences
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• v.3 no.2
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• pp.135-141
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• 1990

Two experiments were conducted to determine the validity of the deuterium oxide ($D_2O$) dilution method to estimate milk intake by pigs. A total of 39 piglets weaned from their dams 24 - 36 hours after birth and trained to drink from artificial nipples, were used for two experiments. Estimates of milk replacer consumption of individual piglets over 1, 3, 5 and 7 days were made by the $D_2O$ dilution method and by dissappearance. Milk intakes estimated by this $D_2O$ dilution method were significantly correlated ($R^2$ = 0.98-0.99) with milk intake measured by disappearance. The average difference between estimates by disappearance and estimates by the $D_2O$ dilution method were -1%, +0.5%, +0.5% and -2.1% for measurement period of 1, 3, 5 and 7 days respectively.