Browse > Article

Deuterium Ion Implantation for The Suppression of Defect Generation in Gate Oxide of MOSFET  

Lee, Jae-Sung (Division of Information and Communication Engineering, Uiduk University)
Do, Seung-Woo (School of Electrical Engineering and Computer Science, Kyungpook National University)
Lee, Yong-Hyun (School of Electrical Engineering and Computer Science, Kyungpook National University)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.45, no.7, 2008 , pp. 23-31 More about this Journal
Abstract
Experiment results are presented for gate oxide degradation under the constant voltage stress conditions using MOSFETs with 3-nm-thick gate oxides that are treated by deuterium gas. Two kinds of methods, annealing and implantation, are suggested for the effective deuterium incorporation. Annealing process was rather difficult to control the concentration of deuterium. Because the excess deuterium in gate oxide could be a precursor for the wear-out of gate oxide film, we found annealing process did not show improved characteristics in device reliability, compared to conventional process. However, deuterium implantation at the back-end process was effective method for the deuterated gate oxide. Device parameter variations as well as the gate leakage current depend on the deuterium concentration and are improved by low-energy deuterium implantation, compared to those of conventional process. Especially, we found that PMOSFET experienced the high voltage stress shows a giant isotope effect. This is likely because the reaction between "hot" hole and deuterium is involved in the generation of oxide trap.
Keywords
MOSFET; Gate oxide; Deuterium; Ion implantation; Reliability;
Citations & Related Records
연도 인용수 순위
  • Reference
1 D. J. DiMaria and E. Cartier, 'Mechanism for stress-induced leakage currents in thin silicon dioxide films,' J. Appl. Phys., vol. 78, pp. 3883-3894, 1995   DOI   ScienceOn
2 K. Hess, I. C. Kizilyalli, and J. W. Lyding, 'Giant isotope effect in hot electron degradation of metal oxide silicon devices,' IEEE Trans. Electron Devices, vol. 45, pp. 406-416, Feb. 1998   DOI   ScienceOn
3 J. Wu, E. Rosenbaum, B. MacDonald, E. Li, B. Tracy, and P. Fang, 'Anode hole injection versus hydrogen release: The mechanism for gate oxide breakdown,' IEEE Int. Reliability Physics Symp., pp. 27-32, San Jose, CA, 2000
4 H. Guan, M. F. Li, Y. He, B. J. Cho, and Z. Dong, 'A thorough study of quasi-breakdown phenomenon of thin gate oxide in dual-gate CMOSFET's', IEEE Trans. Electron Devices, vol. 47, pp. 1608-1616, Aug. 2000   DOI   ScienceOn
5 J. S. Lee. Y. H. Lee, and K. Hess, 'A Thorough Study of Hydrogen-Related Gate Oxide Degradation in Deep Submicron MOSFET's with Deuterium Treatment Process,' Solid State Electronics vol 50/2, pp 149-154, 2006   DOI   ScienceOn
6 W. F. Clark, T. G. Ference, T. B. Hook, K. M. Watson, S. W. Mitti and J. S. Burnham, 'Process stability of deuterium-annealed MOSFET's,' IEEE Electron Device Lett. vol. 20, pp. 48, 1999   DOI   ScienceOn
7 T. Sakura, H. Utsunomiya, Y. Kamakua, and K. Taniguchi, 'A detailed study of soft- and pre-soft-breakdowns in small geometry MOS structures,' in IEDM Tech. Dig., pp. 183-186, CA. 1998
8 Y. Mitani, H. Satake, H. Itoh, and A. Toriumi, 'Suppression of stress-induced leakage current after Fowler-Nordheim stressing by deuterium pyrogenic oxidation and deuterium poly-Si deposition,' IEEE Trans. Electron Devices, vol. 49, pp. 1192-1197, Jul. 2002   DOI   ScienceOn
9 M. Houssa, T. Nigam, P. W. Mertens, and M. M. Heyns, 'Model for the current-voltage characteristics of ultrathin gate oxides after soft breakdown', J. Appl. Phys., vol. 84, No.8, pp. 4351-4355, 1998   DOI   ScienceOn
10 Z. Chen, K. Hess, J. Lee, J. W. Lyding, E. Rosenbaum, I. Kizilyalli, S. Chetlur, and R.Huang, 'On the mechanism for interface trap creation in MOS transistors due to channel hot carrier stressing,' IEEE Electron Device Lett. vol. 21, pp. 24-26, Jan. 2000   DOI   ScienceOn
11 A. Melik-Martirosian and T.-P. Ma, 'Lateral profiling of interface traps and oxide charge in MOSFET devices : charge pumping versus DCIV', IEEE Trans. Electron Devices vol. 48, No. 10, pp. 2303-2309, 2001   DOI   ScienceOn
12 J. W. Lyding, K. Hess, and I. C. Kizilyalli, Appl. Phys. Lett., 'Reduction of hot electron degradation in MOS transistors by deuterium processing,' vol. 68, pp. 2526, 1996   DOI
13 S.I.Takagi and M.Takayanagi, 'Carrier transport properties of thin gate oxides after soft and hard breakdown', Microelectronic Engineering, vol. 59, pp. 5-15, 2001   DOI   ScienceOn
14 M. H. Lee, C. H, Lin, and C. W. Liu, 'Novel methods to incorporate deuterium in the MOS structures,' IEEE Electron Device Lett., vol. 22, pp.519-521, Nov. 2001   DOI   ScienceOn
15 E. Rosenbaum and J. Wu, 'Trap generation and breakdown processes in very thin gate oxides', Microelectronics Reliability, vol. 41, pp.625-632, 2001   DOI   ScienceOn
16 J.-S. Lee, 'Modeling of Time-Dependent Defect Generation During Constant Voltage Stress for Thin Gate Oxide of Sub-Micron MOSFET' Japanese Journal of Applied Physics, vol. 47, No. 1, pp.19-22, 2008   DOI
17 E. M. Vogel, D. W. Heh, J. B. Bernstein, and J. S. Suehle, 'Impact of the trapping of anode hot holes on silicon dioxide breakdown,' IEEE Electron Device Lett., vol. 23, pp. 667-669, Nov. 2002   DOI   ScienceOn
18 E. Wu, E. Nowak, J. Aitken, W. Abadeer, L. K. Han, and S. Lo, 'Structural dependence of dielectric breakdown in ultra-thin gate oxides and its relationship to soft breakdown modes and device failure,' in IEDM Tech. Dig., pp. 187-190, CA, 1998
19 K. F. Schuegraf and C. Hu, 'Hole injection SiO2 breakdown model for very low voltage lifetime extrapolation,' IEEE Trans. Electron Devices, vol. 41, no. 5, pp. 761-766, 1994   DOI   ScienceOn