• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.5
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• pp.441-447
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• 2003

When a SnO$_2$ thin film was deposited by thermal CVD, two different types of growth behavior that were dependent on the deposition temperature were observed. The film grown at 475$^{\circ}C$ had a wide grain size distribution and a faceted surface shape. On the other hand, the film grown at 5$25^{\circ}C$ had a relatively narrow grain size distribution and a rounded sulfate shape. The aspects of grain shape and growth behavior agree well with the theory of gram growth and a roughening transition. The charge tarrier density decreased with deposition time. According to photoluminescence measurements, the peak intensity of the spectra occurred at approximately 2.5 eV, which is related to oxygen vacancies, and decreased with increasing of deposition time. These measurement results suggest that the number of oxygen vacancies, which is related to the electrical conductivity, decrease with deposition time.

• Journal of the Semiconductor & Display Technology
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• v.20 no.4
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• pp.157-160
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• 2021

As an insulator for a thin film transistor(TFT) and an encapsulation material of organic light emitting diode(OLED), aluminum oxide (Al₂O₃) has been widely studied using several technologies. Especially, in spite of low deposition rate, atomic layer deposition (ALD) has been used as a process method of Al₂O₃ because of its low process temperature and self-limiting reaction. In the Al₂O₃ deposition by ALD method, Ar Purge had some crucial effects on the film properties. After reaction gas is injected as a formation of pulse, an inert argon(Ar) purge gas is injected for gas desorption. Therefore, the process parameter of Ar purge gas has an influence on the ALD deposited film quality. In this study, Al₂O₃ was deposited on glass substrate at a different Ar purge time and its structural characteristics were investigated and analyzed. From the results, the growth rate of Al₂O₃ was decreased as the Ar purge time increases. The surface roughness was also reduced with increasing Ar purge time. In order to obtain the high quality Al₂O₃ film, it was known that Ar purge times longer than 15 sec was necessary resulting in the self-limiting reaction.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.45-45
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• 2014

The importance of magnesium alloys has significantly increased due to their low density, high strength/weight ratio, very good electromagnetic shielding features and good recyclability. However, unfortunately, Mg alloys are very susceptible to corrosion due to their high chemically activities (= -2.356 V vs. NHE at $25^{\circ}C$), hence, most commercial Mg alloys require corrosion protective coatings. Organic coating such as painting, powder coating and electrophoretic deposition of paint (E-paint) is typically used in the final stages of the coating process of Mg alloys. In this study, effect of pre-immersion time on the deposition of E-paint on AZ31 Mg alloy was investigated. It was found that during pre-immersion time, AZ31 Mg alloy rapidly reacts with E-paint solution and paint can be self-deposited on the AZ31 surface without applying of electric current. The pore size on the E-painted AZ31 Mg alloy increased with increasing pre-immersion time from 0 to 5 min. Both adhesion and corrosion resistance of E-painted AZ31 Mg alloy decreased with increasing pre-immersion time. The best E-paint AZ31 Mg alloy, which showed stronger adhesion after water immersion test and good corrosion resistance, was started to deposit after 5 s of pre-immersion time.

• Analytical Science and Technology
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• v.36 no.2
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• pp.80-88
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• 2023

Fingerprints play a crucial role in the identification of potential suspects in criminal cases. However, determining the actual time, i.e., the time at which the fingermark was deposited, is challenging. Herein, we investigated the persistence and aging of fingerprints over time by observing the time evolution of latent fingerprints on a polystyrene box stored in a dark room. Fingerprint samples that were stored for up to two years could be detected with maximum accuracy using a black iron-oxide-based emulsion (black emulsion). To estimate the time of fingerprint deposition, fingerprint aging was studied by analyzing the lipid components of the fingerprints after their development. Cholesterol and squalene were selected as indicators of fingerprint aging, and their ratio was estimated to assess aging. In the case of fingerprint samples stored in a dark room for up to one month after deposition, the cholesterol/squalene ratio was approximately 0.01; it increased gradually to ≥ 0.1 over six months. A substantial reduction in the levels of cholesterol and squalene from the initial levels was also noted. Cholesterol and squalene were not detected after one year of storage. Thus, the extent of aging could be determined by analyzing the aging indicators for up to six months. Two cases that could cause error in the estimation of the fingerprint deposition time, namely, heating of the fingerprint sample before development and storage of the developed fingerprints in a dark room, were also investigated.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.121.2-121.2
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• 2011

Aluminum-doped Zinc Oxide (AZO) is considered as an excellent candidate to replace Indium Tin Oxide (ITO), which is widely used as transparent conductive oxide (TCO) for electronic devices such as liquid crystal displays (LCDs), organic light emitting diodes (OLEDs) and organic solar cells (OSCs). In the present study, AZO thin film was applied to the transparent electrode of a channel-shaped flexible organic solar cell using a low-temperature selective-area atomic layer deposition (ALD) process. AZO thin films were deposited on Poly-Ethylene-Naphthalate (PEN) substrates with Di-Ethyl-Zinc (DEZ) and Tri-Methyl-Aluminum (TMA) as precursors and $H_2O$ as an oxidant for the atomic layer deposition at the deposition temperature of $130^{\circ}C$. The pulse time of TMA, DEZ and $H_2O$, and purge time were 0.1 second and 20 second, respectively. The electrical and optical properties of the AZO films were characterized as a function of film thickness. The 300 nm-thick AZO film grown on a PEN substrate exhibited sheet resistance of $87{\Omega}$/square and optical transmittance of 84.3% at a wavelength between 400 and 800 nm.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.7 no.1
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• pp.67-74
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• 2008

In this paper, the surface characteristics of the AIP-TiN coated of the SKH51 and SKD11 steels under various deposition times are presented with emphasis on the comparison of the two materials. The micro-particle, the surface roughness, the micro-hardness, the coated layer thickness, the atomic distribution of Ti, N and Fe elements and the adhesion are measured for various deposition times. It has been shown that the micro-particle, the surface roughness, the coated layer thickness and the atomic distribution of Ti, N and Fe elements are similar for the two cases regardless of the test deposition time from 10 to 180 minutes. However, it has been shown that the micro-hardness and the adhesion of the SKH51 steel are higher than the SKD11 steel, indicating that they are much affected by the hardness of the material to be coated.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.06a
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• pp.517-520
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• 2007

The BSCCO thin film fabricated by using the layer by layer deposition method was compared with the BSCCO thin film fabricated by using the evaporation method. Reevaporation in the form of Bi atoms or $Bi_2O_3$molecules easily bring out the deficiency of Bi atoms in thin film due to the long sputtering time of the layer by layer deposition. On the other hand, the respective atom numbers corresponding to BSCCO phase is concurrently supplied on the film surface in the evaporation deposition process and leads to BSCCO phase formation. Also, it is cofirmed that by optimizing the deposition condition, each single phase of the Bi2201 phase and the Bi2212 phase can be fabricated, the sticking coefficient of Bi element is clearly related to the changing of substrate temperature and the formation of the Bi2212 phase.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.2
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• pp.164-168
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• 2005

Piezoelectric ZnO thin films were for the first time formed on SiO$_2$/Si(100) substrate using 2-step deposition, atomic layer deposition(ALD) and RF magnetron sputtering deposition, for film bulk acoustic resonator(FBAR) applications. The ZnO buffer layer by ALD was deposited using alternating diethyl zinc(DEZn)/$H_2O$ exposures and ultrahigh purity argon gas for purging. The ZnO films by 2-step deposition revealed stronger c-axis-preferred orientation and smoother surface than those by the conventional RF sputtering method. The solidly mounted resonator(SMR)-typed FBAR fabricated by using 2-step deposition method revealed higher quality factor of 580 and lower return loss of -17.35dB. Therefore the 2-step deposition method in this study could be applied to the FBAR device fabrication.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.12 no.2
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• pp.113-119
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• 2000

An experimental study has been carried out in order to investigate on a particle deposition on a circular cylinder surface. The present study is focused on the particulate fouling occurring in a heat exchanger for a seawater desalinization, in a laminar flow over circular cylindrical tubes. The objective is to investigate how NaCl concentration influences the $SiO2$ particle deposition on the surface of a glass circular cylinder. The NaCl concentration was changed from 0 g/L to 40 g/L. As the experimental results of $SiO2$ particle which is deposited on the glass circular cylinder surface showed, particle deposition rate per unit time increases rapidly with the increase of NaCl concentration between 0 g/L and 15 g/L. After the maximum of particle deposition rate was found at the NaCl concentration of 15 g/L, particle deposition rate remains unchanged or decreases gradually with the NaCl concentration from 15 g/L to 40 g/L. Also the $SiO2$ deposition rate of particles does not have serious variations with the position at present glass surface.

• Korean Journal of Materials Research
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• v.13 no.5
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• pp.309-312
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• 2003

Tin dioxide($_SnO2$) thin films were deposited on alumina substrate by metal-organic chemical vapor deposition (MOCVD) as a function of temperature and time. Thin films were fabricated from di-n-butyltin diacetate as a precursor and oxygen as an oxidation. The microstructure of deposited films was characterized by X-ray diffraction and field emission scanning electron microscopy(FE-SEM). The thickness was linearly increased with deposition time and $SnO_2$structure was found from $375^{\circ}C$ for the deposition time of 32 min. The maximum sensitivity to 500ppm CO gas was observed for the specimens deposited at $375^{\circ}C$ for 2 min at the operating temperature of $350^{\circ}C$. Gas sensitivity to CO increased with decreasing the film thickness. The sensing properties of response time, recovery and sensitivity of CO were changed with variations of substrate temperature and time.