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http://dx.doi.org/10.3740/MRSK.2003.13.5.309

Characteristics of Surface Reaction of SnO2 Thin Films Prepared by MOCVD  

Park, Kyung-Hee (Research Institute of Energy Resources Technology, Chosun University)
Seo, Yong-Jin (Department of Electrical Engineering, Daebul University)
Hong, Kwang-Jun (Department of Physics, Chosun University)
Lee, Woo-Sun (Department of Electrical Engineering, Chosun University)
Park, Jin-Seong (Department of Material Engineering, Chosun University)
Publication Information
Korean Journal of Materials Research / v.13, no.5, 2003 , pp. 309-312 More about this Journal
Abstract
Tin dioxide($_SnO2$) thin films were deposited on alumina substrate by metal-organic chemical vapor deposition (MOCVD) as a function of temperature and time. Thin films were fabricated from di-n-butyltin diacetate as a precursor and oxygen as an oxidation. The microstructure of deposited films was characterized by X-ray diffraction and field emission scanning electron microscopy(FE-SEM). The thickness was linearly increased with deposition time and $SnO_2$structure was found from $375^{\circ}C$ for the deposition time of 32 min. The maximum sensitivity to 500ppm CO gas was observed for the specimens deposited at $375^{\circ}C$ for 2 min at the operating temperature of $350^{\circ}C$. Gas sensitivity to CO increased with decreasing the film thickness. The sensing properties of response time, recovery and sensitivity of CO were changed with variations of substrate temperature and time.
Keywords
Thin films; Tin oxide; MOCVD; Surface reaction;
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