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Effects on the Al2O3 Thin Film by the Ar Pulse Time in the Atomic Layer Deposition  

Kim, Ki Rak (Department of Electronics Engineering, Gachon University)
Cho, Eou Sik (Department of Electronics Engineering, Gachon University)
Kwon, Sang Jik (Department of Electronics Engineering, Gachon University)
Publication Information
Journal of the Semiconductor & Display Technology / v.20, no.4, 2021 , pp. 157-160 More about this Journal
Abstract
As an insulator for a thin film transistor(TFT) and an encapsulation material of organic light emitting diode(OLED), aluminum oxide (Al2O3) has been widely studied using several technologies. Especially, in spite of low deposition rate, atomic layer deposition (ALD) has been used as a process method of Al2O3 because of its low process temperature and self-limiting reaction. In the Al2O3 deposition by ALD method, Ar Purge had some crucial effects on the film properties. After reaction gas is injected as a formation of pulse, an inert argon(Ar) purge gas is injected for gas desorption. Therefore, the process parameter of Ar purge gas has an influence on the ALD deposited film quality. In this study, Al2O3 was deposited on glass substrate at a different Ar purge time and its structural characteristics were investigated and analyzed. From the results, the growth rate of Al2O3 was decreased as the Ar purge time increases. The surface roughness was also reduced with increasing Ar purge time. In order to obtain the high quality Al2O3 film, it was known that Ar purge times longer than 15 sec was necessary resulting in the self-limiting reaction.
Keywords
aluminum oxide (Al2O3); atomic layer deposition (ALD); Ar purge gas; growth rate; surface roughness;
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1 S. Hu, K. Lu, H. Ning, Z. Zheng, H. Zhang, Z. Fang, R. Yao, M. Xu, L. Wang, L. Lan, J. Peng, and X. Lu, "High Mobility Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor by Aluminum Oxide Passivation Layer", IEEE Electron Device Letters, Vol. 38, pp. 879-882, 2017.   DOI
2 H.-Y. Li, Y.-F. Liu, Y. Duan, Y.-Q. Yang, and Y.-N. Lu, "Method for Aluminum Oxide Thin Films Prepared through Low Temperature Atomic Layer Deposition for Encapsulating Organic Electroluminescent Devices", Materials, Vol. 8, pp. 600-610, 2015.   DOI
3 S. K. Kim, S. W. Lee, C. S. Hwang, Y.-S. Min, J. Y. Won, and J. Jeong, "Low Temperature (<100°C) Deposition of Aluminum Oxide Thin Films by ALD with O3 as Oxidant", J. Electrochemical Society, Vol. 153, pp. F69-F76, 2006.   DOI
4 A. P. Ghosh, L. J. Gerenser, C. M. Jarman, and J. E. Fornalik, "Thin-film encapsulation of organic light-emitting devices", Applied Physics Letters Vol. 86, 223503, 2005   DOI
5 Y. Y. Qing. and D. Yu, "Optimization of Al 2 O 3 Films Deposited by ALD at Low Temperatures for OLED Encapsulation", The Journal of Physical Chemistry C Vol. 118, pp. 18783-18787, 2014.   DOI
6 J. B. Kim, D. R. Kwon, K. Y. Oh, and C. M. Lee, "Improvement in Al2O3 dielectric behavior by using ozone as an oxidant for the atomic layer deposition technique", Journal of the Korean Vacuum Society, Vol. 11, No.3, pp.183-188, 2002.
7 Y. Nam, H.-O. Kim, S. H. Cho, C.-S. Hwang, T. Kim, S. Jeon, and S.-H. K. Park, "Beneficial effect of hydrogen in aluminum oxide deposited through the atomic layer deposition method on the electrical properties of an indium-gallium-zinc oxide thin-film transistor", J. of Information Display, Vol. 17, pp. 65-71, 2016.   DOI
8 S.-H. K. Park, J. Oh, C.-S. Hwang, J.-I. Lee, Y. S. Yang, and H. Y. Chu, "Ultrathin Film Encapsulation of an OLED by ALD", Electrochemical and Solid-State Letters, Vol. 8, H21, 2005.   DOI
9 R. Katamreddy, R. Inman, G.Jursich, A. Soulet, and C. Takoudis, "ALD and Characterization of Aluminum Oxide Deposited on Si(100) using Tris(diethylamino) Aluminum and Water Vapor", J. Electrochemical Society, Vol. 153, pp. C701-C706, 2006.   DOI
10 C. W. Jeong, J. S. Lee, and S. K. Joo, "Growth and Characterization of Aluminum Oxide(Al2O3) Thin Films by Plasma-Assisted Atomic Layer Controlled Deposition", J. Kor. Inst. Met. & Mater. Vol.38, No.10, 2000.
11 H. Park, Y. Nam, J. Jin, and B.-S. Bae, "Space Charge-Induced Unusually-High Mobility of Solution Processed Indium Oxide Thin Film Transistor with Ethylene Glycol Incorporated Aluminum Oxide Gate Dielectric", RSC Advances, Vol. 00, pp. 1-3, 2015.