• 대한토목학회논문집
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• 제36권4호
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• pp.617-625
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• 2016

본 연구에서는 하천변에 실제로 위치한 지하수 관정 110개를 대상으로 Hunt (1999)의 해석해를 이용하여 양수로 인한 지하수위 강하 및 하천수 감소량을 산정하였다. 대상 관정 각각에 대해 양수량 대비 하천수 감소량을 산정한 결과 대부분의 관정에서 양수기간 5년 동안 평균적으로 80%를 초과하는 것으로 분석되었다. 하상수리전도도가 $1.0{\times}10^{-9}m/s$로 매우 작고 하천바닥인자(SBF)가 1 보다 작은 경우를 제외하고는 하천경계조건의 영향으로 하천방향 영향거리가 짧아져 비대칭적 지하수위 강하 분포를 크게 유발하는 것으로 나타났다. 하상수리전도도가 $1.0{\times}10^{-7}m/s$보다 크고 하천고갈인자(SDF)가 100 보다 작은 경우에는 하천수 감소율이 80 %를 초과하여 양수의 영향이 크게 발생하였으나, 그 외의 조건에 대해서는 SDF 값만으로 하천 영향의 대소를 판별하기에 한계가 있는 것으로 분석되었다. 또한 하폭이 400 m를 넘는 경우에는 하상수리전도도 변화에 따른 하천수 감소율의 변화가 크지 않는 것으로 분석되었다.

• 반도체디스플레이기술학회지
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• 제14권3호
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• pp.27-31
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• 2015

It was the electrical properties of ZnS treated by the annealing in a vaccum and an atmosphere conditions to reseached the leakage current effect of semiconductor devices. Most samples were shown the non-linear with unipolar properties, but the ZnS annealed at $100^{\circ}C$ in a vaccum was only observed no leakage current in a range of -20 V< voltage < 15 V. The crystallinity of ZnS with no leakage current was improved and optical property was also improved. Because the ambipolar characteristics and low leakage currents originated from the extension effect of a depletion width by electron-hole combination in the depletion layer.

• Journal of Electrical Engineering and Technology
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• 제2권2호
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• pp.267-273
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• 2007

A depletion-mode MOSFET has been analyzed to evaluate its electrical behavior using a novel 3-D numerical simulation package. The characterizing analysis of the BC MOSFET was performed through short-channel narrow-channel and small-geometry effects that are investigated, in detail, in terms of the threshold voltage. The DIBL effect becomes significant for a short-channel device with a channel length of $<\;3({\mu}m)$. For narrow-channel devices the variation of the threshold voltage was sharp for $<4({\mu}m)$ due to the strong narrow-channel effect. In the case of small-geometry devices, the shift of the threshold voltage was less sensitive due to the combination of the DIBL and substrate bias effects, as compared with that observed from the short-channel and narrow-channel devices. The characterizing analysis of the narrow-channel and small-geometry devices, especially with channel width of $<\;4({\mu}m)$ and channel area of $<\;4{\times}4({\mu}m^2)$ respectively, can be accurately performed only from a 3-D numerical simulation due to their sharp variations in threshold voltages.

• 센서학회지
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• 제23권3호
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• pp.185-191
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• 2014

The width of depletion region in a varactor diode can be modulated by varying a reverse bias voltage. Thus, the preferred characteristics of depletion capacitance can obtained by the change in the width of depletion region so that it can select only the desirable frequencies. In this paper, the TV tuner varactor diode fabricated by hyper-abrupt profile control technique is presented. This diode can be operated within 3.3 V of driving voltage with capability of UHF band tuning. To form the hyperabrupt profile, firstly, p+ high concentration shallow junction with $0.2{\mu}m$ of junction depth and $1E+20ions/cm^3$ of surface concentration was formed using $BF_2$ implantation source. Simulation results optimized important factors such as epitaxial thickness and dose quality, diffusion time of n+ layer. To form steep hyper-abrupt profile, Formed n+ profile implanted the $PH_3$ source at Si(100) n-type epitaxial layer that has resistivity of $1.4{\Omega}cm$ and thickness of $2.4{\mu}m$ using p+ high concentration Shallow junction. Aluminum containing to 1% of Si was used as a electrode metal. Area of electrode was $30,200{\mu}m^2$. The C-V and Q-V electric characteristics were investigated by using impedance Analyzer (HP4291B). By controlling of concentration profile by n+ dosage at p+ high concentration shallow junction, the device with maximum $L_F$ at -1.5 V and 21.5~3.47 pF at 0.3~3.3 V was fabricated. We got the appropriate device in driving voltage 3.3 V having hyper-abrupt junction that profile order (m factor) is about -3/2. The deviation of capacitance by hyper-abrupt junction with C0.3 V of initial capacitance is due to the deviation of thermal process, ion implantation and diffusion. The deviation of initial capacitance at 0.3 V can be reduced by control of thermal process tolerance using RTP on wafer.

• 한국전자통신학회논문지
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• 제7권4호
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• pp.833-837
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• 2012

SC1(Standard Cleaning) 시간을 줄여 STI 측벽에서의 실리콘 손실 및 과도절개를 최소화하여 DRAM에서의 데이터 유지시간을 증가시키는 방법을 제안한다. SC1 시간 최적화를 통해 STI 상층 모서리부에서의 기생 전기장을 약화시킴으로서 Inverse Narrow Width 효과를 감소시키면 셀 트랜지스터의 Subthreshold 누설의 증가없이 채널 도핑농도가 감소하게 된다. 이것은 셀 접합에서 P-Well간 공핍 영역에서의 전기장을 최소화하여 일드나 데이터 유지시간의 증가를 보여 주었다.

• 대한기계학회논문집B
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• 제32권9호
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• pp.683-694
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• 2008

The performance and durability of Polymer Electrolyte Fuel Cells (PEFCs) are strongly influenced by the uniformity of current density, temperature, species distributions inside a cell In order to obtain uniform distributions in them, the optimal design of flowfield must be a key factor. In this paper, the numerical study of land/channel flowfield optimizations is performed, using a multi-dimensional, multi-phase, non-isothermal PEFC model. Numerical simulations reveal more uniform current density and HFR(High Frequency Resistance) distributions and thus better PEFC performance with narrower land/channel width where the less severe oxygen depletion effect near the land region and more uniform contact resistance variation along the in-plane direction are achieved. The present study elucidates detailed effects of land/channel width and assist in identifying optimal flow-field design strategies for the operation of PEFCs.

• 자원환경지질
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• 제27권6호
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• pp.549-556
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• 1994

Geochemical studies on gold-bearing quartz veins and wallrocks from the Okgye mine were carried out in order to investigate the primary dispersion patterns of gold and associated elements and to quantify the dispersion width of elements with distance from the gold-bearing quartz veins. Gold-bearing quartz veins occur in basaltic trachyandesite of unknown age. Enrichment of $k_2O$, MnO, Au, As, Rb, Sb, Pb, Zn, Cu, Ag and Cd, and depletion of $Na_2O$ and Sr are found in altered wallrocks. The ratio of $k_2O(k_2O+Na_2O)$, alteration index for trace elements, and Rb/Sr in altered wallrocks are increased, whereas Sr/CaO ratio is decreased with approach to the gold-bearing quartz veins. The widths of primary dispersion range from 17 cm to 155 cm. The relative dispersion width increases in order Au=Cu=Zn=Ag=Cd$k_2O$=Rb and Ba< $Na_2O$ $Na_2O$, As, Sb, Sr, Pb, Au, Cu, Zn, Ag and Cd, and a quadratic function for $k_2O$, MnO, Rb and Ba.

• 센서학회지
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• 제26권2호
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• pp.79-84
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• 2017

The drain current of the SB MOSFET was analytically modeled by an equation composed of thermionic emission and tunneling with consideration of the image force lowering. The depletion region electron concentration was used to model the channel electron concentration for the tunneling current. The Schottky barrier width is dependent on the channel electron concentration. The drain current is changed by the gate oxide thickness and Schottky barrier height, but it is hardly changed by the doping concentration. For a GaN SB MOSFET with ITO source and drain electrodes, the calculated threshold voltage was 3.5 V which was similar to the measured value of 3.75 V and the calculated drain current was 1.2 times higher than the measured.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 C
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• pp.1448-1450
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• 1994

The breakdown voltages of punchthrough-mode diodes with cylindrical junction are analytically calculated, The proposed method, which is based on th Gauss's law, estimates the lateral expansion of the depletion region as well as the electric field and the charge distribution. The proposed method is given in terms of epitaxial layer width, the epitaxial layer doping concentration, and curvature radius of the junction edge. The calculation results agree well with the MEDICI simulation results for various device parameters.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.550-553
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• 2001

In this study, unity current gain frequency f$\_$T/ of GaAs MESFET is predicted with different temperatures up to 400 $^{\circ}C$. Temperature dependence parameters of the device including intrinsic carrier concentration n$\_$i/ effective mass, depletion width are considered to be temperature dependent. Small signal parameters such as gate-source, gate dran capacitances C$\_$gs/ C$\_$gd/ are correlated with transconductance g$\_$m/ to predict the unity current gain frequency. The extrinsic capacitance which plays an important roles in high frequency region has been taken into consideration in evaluating total capacitance by using elliptic integral through the substrate. From the results, f$\_$T/ decreases as the temperature increases due to the increase of small signal capacitances and the mobility degradation. Finally the extrinsic elements of capacitances have been proved to be critical in deciding f$\_$T/ which are originated from the design rule of the device.