Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
권호 표지
DOI QR코드

DOI QR Code

Current Modeling for Accumulation Mode GaN Schottky Barrier MOSFET for Integrated UV Sensors

  • Park, Won-June (School of Electronics Engineering, College of IT Engineering, Kyungpook National University) ;
  • Hahm, Sung-Ho (School of Electronics Engineering, College of IT Engineering, Kyungpook National University)
  • Received : 2017.01.23
  • Accepted : 2017.03.17
  • Published : 2017.03.31
Download PDF
⟨ Previous Next ⟩

Abstract

The drain current of the SB MOSFET was analytically modeled by an equation composed of thermionic emission and tunneling with consideration of the image force lowering. The depletion region electron concentration was used to model the channel electron concentration for the tunneling current. The Schottky barrier width is dependent on the channel electron concentration. The drain current is changed by the gate oxide thickness and Schottky barrier height, but it is hardly changed by the doping concentration. For a GaN SB MOSFET with ITO source and drain electrodes, the calculated threshold voltage was 3.5 V which was similar to the measured value of 3.75 V and the calculated drain current was 1.2 times higher than the measured.

Keywords

References

  1. H. C. Lee, S. Y. Hyun, H. I. Cho, C. Ostermaier, K. W. Kim, S. I. Ahn, K. I. Na, J. B. Ha, D. H. Kwon, C. K. Hahn, S. H. Hahm, H. C. Choi, and J. H. Lee, "Enhanced Electrical Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistor with p-GaN Back Barriers and Si Delta-Doped Layer", J. Appl. Phys., Vol. 47, No. 4S, pp. 2824-2827, 2008. https://doi.org/10.1143/JJAP.47.2824
  2. V. A. Dmitriev, et al., "Electric breakdown in GaN p-n junc tions", Appl. Phys. Lett., Vol. 68, No. 2, pp. 229-231, 1996. https://doi.org/10.1063/1.116469
  3. Y.?F. Wu, et al., "Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors", Appl. Phys. Lett., Vol. 69, No. 10, pp. 1438-1440, 1996. https://doi.org/10.1063/1.117607
  4. M. Asif Khan, et al., "High electron mobility transistor based on a $GaN/Al_xGa_{1-x}N$ heterojunction", Appl. Phys. Lett., Vol. 63, No. 10, pp. 1214-1215, 1993. https://doi.org/10.1063/1.109775
  5. C. J. Lee, et al., "Hybrid UV Active Pixel Sensor Implemented Using GaN MSM UV Sensor and Si-Based Circuit", IEEE Sens. J., Vol. 15, No. 9, pp. 5071-5074, 2015. https://doi.org/10.1109/JSEN.2015.2433939
  6. Ayse Merve Ozbek, "Schottky Barrier GaN FET Model Creation and Verification using TCAD for Technology Evaluation and Design", NCSU Master Thesis, 2008
  7. J. Park et.al,"Analytical Model of Source Injection for Ntype Enhancement Mode GaN-based Schottky Source/ Drain MOSFET, ISDRS 2009"
  8. C. Y. Chang, et al., "Carrier transport across metal-semiconductor barriers", Solid-State Electron., Vol. 13, No. 6, pp. 727-740, 1970. https://doi.org/10.1016/0038-1101(70)90060-2
  9. E. J. Miller, et al., "Gate leakage current mechanisms in AlGaN/GaN heterostructure field-effect transistors", J. Appl. phys., Vol. 88, No. 10, pp. 5951-5958, 2000. https://doi.org/10.1063/1.1319972
  10. C. C. Hu, Modern Semiconductor Devices for integrated circuits, Pearson, New Jersey, p. 154, 2010.
  11. M. H. Lean, et al., "Effect of gaseous void on bipolar charge transport in layered polymer film", J. Phys. D: Appl. Phys., Vol. 47, No. 7, p. 075303, 2014. https://doi.org/10.1088/0022-3727/47/7/075303
  12. Y. Taur, Fundamentals of Modern VLSI Devies, Cambridge University Press, New York, pp. 79-80, 2009.
  13. D. S. Kim et al., "Performance enhancement of GaN SB MOSFET on substrate using two-step growth method", Microelectronic Engineering, Vol. 88, No. 7, pp. 1221-1224, 2011. https://doi.org/10.1016/j.mee.2011.03.119