• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2013.05a
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• pp.97-97
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• 2013

We present a comprehensive study on the integration of h-BN with silicon MOSFET. Temperature dependent mobility modeling is used to discern the effects of top-gate dielectric on carrier transport and identify limiting factors of the system. The result indicates that coulomb scattering and surface roughness scattering are the dominant scattering mechanisms for silicon MOSFETs at relatively low temperature. Interposing a layer of h-BN between $SiO_2$ and Si effectively weakens coulomb scattering by separating carriers in the silicon inversion layer from the charged centers as 2-dimensional h-BN is relatively inert and is expected to be free of dangling bonds or surface charge traps owing to the strong, in-plane, ionic bonding of the planar hexagonal lattice structure, thus leading to a significant improvement in mobility relative to undecorated system. Furthermore, the atomically planar surface of h-BN also suppresses surface roughness scattering in this Si MOSFET system, resulting in a monotonously increasing mobility curve along with gate voltage, which is different from the traditional one with a extremum in a certain voltage. Alternatively, high-k dielectrics can lead to enhanced transport properties through dielectric screening. Modeling indicates that we can achieve even higher mobility by using h-BN decorated $HfO_2$ as gate dielectric in silicon MOSFETs instead of h-BN decorated $SiO_2$.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.62 no.3
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• pp.376-379
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• 2013

Multi-walled carbon nanotubes (MWCNTs) were synthesized using catalytic chemical vapor deposition (CVD) method. Oxygen plasma treatment was applied to modify surface state of the CNTs synthesized for improvement of field emission performance. Surface state of the plasma treated CNTs was studied by X-ray photoelectron spectroscopy (XPS). The surface states of the CNTs were changed as a function of plasma treatment time. The oxygen related carbon shift was moved toward higher binding energy with the plasma treatment time. This result implies that the oxygen plasma treatment changes the surface state effectively. While any shift in carbon 1s peak was not detected for the as grown CNTs, oxygen related carbon shift was detected for the plasma treated CNTs. Carbon shift implies that closed CNT tips were opened by the oxygen plasma and reacted with oxygen species. Since the field emission occurs at pentagons or dangling bonds of the CNT tips, the increase of carbon-oxygen bonds plays an important role in field emission behavior by increasing the number of electron emission sites resulting in improvement of the field emission performance.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.3
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• pp.130-136
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• 1989

Electrical transport and thermally induced metastability in hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) using boron-doped amorphous silicon as an active layer have been studied. The device characteristics n-channel and p-channel operations. The thermal quenching experiments on amorphous silicon-silicon nitride ambipolar TFT give clear evidence for the co-existence of two distinct metastable changes. The densities of metastable active dopants and dangling bonds increase with the quenching temperature. On the other hand, the interface state density appears to decrease with increasing quenching temperature.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2011.05a
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• pp.141-141
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• 2011

DLC(Diamond Like Carbon) 박막은 높은 경도, 낮은 마찰계수, 내화학성 등의 우수한 트라이볼로지적 특성을 가지고 있기 때문에 다양한 산업분야에서 적용되고 있다. 이러한 DLC 박막은 합성기구나 구조의 관점에서 몇 가지 다른 이름으로 불려지기도 한다. 밀도와 경도가 높기 때문에 경질탄소(Hard Carbon)라고도 불려지며, 수소를 함유한 경우에는 수소함유 비정질 탄소(Hydrogenated Amorphous Carbon)이라는 이름이 사용되며, 고밀도 탄소(Dense Carbon) 또는 고밀도 탄화수소(Dense Hydrocarbon)라고 불리기도 한다. 이렇듯 DLC 박막은 합성방법에 따라 함유된 수소와 탄소의 결합구조의 차이가 있다. 수소 함유한 DLC 박막은 20~50%까지 수소를 함유하며, DLC막의 기계적, 광학적, 전기적 특성들이 수소함량과 밀접한 관계를 가지고 있는 것으로 알려져 있다. 그러나 함유된 수소가 $300^{\circ}C$ 이상의 온도에서는 쉽게 결합에서 이탈되면서 흑연화와 더불어 마찰마모시 코팅층의 파손이 발생한다고 보고되고 있고, 또한 수소량이 증가함에 따라 DLC 박막의 경도는 감소하게 되는데, 이는 수소에 의해 dangling bond가 Passivation되면 탄화수소의 3차원적인 Crosslinking은 그만큼 감소하게 되기 때문이라고 알려져 있다. 본 연구에서는 PECVD를 이용하여 여러 가지 공정에 따른 DLC 박막을 증착시켰으며, 수소함유량에 따른 DLC막의 구조와 그에 따른 경도 변화를 살펴보았다. FTIR(Furier Transform Infrared Spectroscopy)과 Raman Spectroscopy을 이용하여 DLC막의 수소의 결합상태를 관찰하였으며, Nano Indentation을 사용하여 미소경도를 측정하였고, FE-SEM을 이용하여 표면과 단면을 관찰하였다. 막의 두께 측정에는 ${\alpha}$-Step을 사용하였으며, Ball-on-Disk 타입의 Tribo-meter을 이용하여, 모재의 경도에 따른 마찰계수 변화를 관찰하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.8
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• pp.479-483
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• 2017

The effect of $NH_3$ plasma treatment on device characteristics was confirmed for an optimized thin film transistor of poly-Si formed by ELA. When C-V curve was checked for MIS (metal-insulator-silicon), Dit of $NH_3$ plasma treated and MIS was $2.7{\times}10^{10}cm^{-2}eV^{-1}$. Also in the TFT device case, it was decreased to the sub-threshold slope of 0.5 V/decade, 1.9 V of threshold voltage and improved in $26cm^2V^{-1}S^{-1}$ of mobility. Si-N and Si-H bonding reduced dangling bonding to each interface. When gate bias stress was applied, the threshold voltage's shift value of $NH_3$ plasma treated device was 0.58 V for 1,000s, 1.14 V for 3,600s, 1.12 V for 7,200s. As we observe from this quality, electrical stability was also improved and $NH_3$ plasma treatment was considered effective for passivation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.300-303
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• 2004

To fill the gap of films for metal-to-metal space High density plasma fluorinated silicate glass (HDP FSG) is used due to various advantages. However, FSG films can have critical drawbacks such as bonding issue of top metal at package, metal contamination, metal peel-off, and so on. These problems are generally caused by fluorine penetration out of FSG film. Hence, FSG capping layers such like SRO(Silicon Rich Oxide) are required to prevent flourine penetration. In this study, their characteristics and a capability to block fluorine penetration for various FSG capping layers are investigated through FTIR analysis. FTIR graphs of both SRO using ARC chamber and SiN show that clear Si-H bonds at $2175{\sim}2300cm^{-1}$. Thus, Si-H bond at $2175{\sim}2300cm^{-1}$ of FSG capping layers lays a key role to block fluorine penetration as well as dangling bond.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.119-120
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• 2007

반도체 공정에서 사용되는 ILD막질 중 oxy-nitrde(SiON) film은 contact etch stopper, photo공정을 위한 ARL(anti-reflection lay떠 그리고, 후속공정의 plasma damage에 대한 blocking layer로서의 역할을 담당하며 많은 공정에 널리 사용되고 있다. 그러나 막질 자체의 불완전성 (trap site, dangling bond)에 의해 cell current instability(CCI) 특성을 악화 시킬 수 있어 이에 대한 원인규명 및 대책이 요구되었다. 본 연구는 미국 S사(社) super flash memory에서 oxy-nitride 막질 증착 시의 gas flow량에 따른 CCI 특성변화를 연구하고 최적의 공정조건을 제시하고자 한다.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.144-144
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• 2000

이전에 수행된 연구에서 표면에 수직하게 dangling bond를 가지는 adatom으로 장식된 6H-SiC(0001) {{{{ SQRT { 3} }}}}$\times${{{{ SQRT { 3} }}}} 표면은 단일 전자 모형으로는 설명되어지지 않는 반도체적 성질을 가지는 것으로 보고되어졌다. 최근의 많은 이론적, 실험적 결과는 이 표면이 Mott-Hubbard 모형으로 설명되어질 수 있음이 보고되어졌다. 이 표면에서 Si이 좀 더 풍부한 3$\times$3 표면의 여러 모형들에 대해 이론적, 실험적 연구는 Energy적으로 E-J 모형이 가장 안정하다고 보고하였다. E-J모형은 표면에 수직인 dagling bond를 가지며 6H-SiC(0001) {{{{ SQRT { 3} }}}}$\times${{{{ SQRT { 3} }}}} 표면에 비해 1/3배의 밀도를 지닌다. 또한 최근의 연구에서 3$\times$3 표면 또한 단일 전자모형은 이 표면의 반도체적 성질에 위배되며 Mott-Hubbard 모형으로 설명되어질수 있음이 보고되어졌다. 이러한 표면 위에 알칼리금속인 Na을 흡착시키면서 일함수의 변화와 Valence Band의 변화를 측정하였다. XPS를 이용하여 Na이 흡착되면서 발생되는 Si과 C의 내각준위의 변화를 측정하였다. 6-SiC(0001) {{{{ SQRT { 3} }}}}$\times${{{{ SQRT { 3} }}}} 과 3$\times$3 표면 구조 모델을 Na을 흡착한 6H-SiC(0001) {{{{ SQRT { 3} }}}}$\times${{{{ SQRT { 3} }}}} 과 3$\times$3 표면으로부터 측정한 UPS, XPS data들로부터 지금까지 제기되어 있는 각 재배열 구조 모형들을 비교 검토하였다.

• Journal of the Korean Solar Energy Society
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• v.39 no.1
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• pp.1-9
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• 2019

Light induced degradation is one of the major research challenges of hydrogenated amorphous silicon related thin film silicon solar cells. Amorphous silicon shows creation of metastable defect states, originating from elevated concentration of dangling bonds during light exposure. The metastable defect states work as recombination centers, and mostly affects quality of intrinsic layer in solar cells. In this paper we present results of light induced degradation in thin film silicon solar cells and discussion on physical origin, mechanism and practical solutions of light induced degradation in thin film silicon solar cells. In-situ light-soaking IV measurement techniques are presented. We also present thin film silicon material with silicon nano-quantum dots embedded within amorphous matrix, which shows superior stability during light-soaking. Our results suggest that solar cell using silicon nano-quantum dots in abosrber layer shows superior stability under light soaking, compared to the conventional amorphous silicon solar cell.

• Korean Journal of Materials Research
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• v.29 no.5
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• pp.317-321
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• 2019

We investigated the characteristics of nano crystalline silicon(nc-Si) thin-film solar cells on graphite substrates. Amorphous silicon(a-Si) thin-film solar cells on graphite plates show low conversion efficiency due to high surface roughness, and many recombination by dangling bonds. In previous studies, we deposited barrier films by plasma enhanced chemical vapor deposition(PECVD) on graphite plate to reduce surface roughness and achieved ~7.8 % cell efficiency. In this study, we fabricated nc-Si thin film solar cell on graphite in order to increase the efficiency of solar cells. We achieved 8.45 % efficiency on graphite plate and applied this to nc-Si on graphite sheet for flexible solar cell applications. The characterization of the cell is performed with external quantum efficiency(EQE) and current density-voltage measurements(J-V). As a result, we obtain ~8.42 % cell efficiency in a flexible solar cell fabricated on a graphite sheet, which performance is similar to that of cells fabricated on graphite plates.