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http://dx.doi.org/10.7836/kses.2019.39.1.001

Study of Light-induced Degradation in Thin Film Silicon Solar Cells: Hydrogenated Amorphous Silicon Solar Cell and Nano-quantum Dot Silicon Thin Film Solar Cell  

Kim, Ka-Hyun (Division of Energy & Optical Technology Convergence, Cheongju University)
Publication Information
Journal of the Korean Solar Energy Society / v.39, no.1, 2019 , pp. 1-9 More about this Journal
Abstract
Light induced degradation is one of the major research challenges of hydrogenated amorphous silicon related thin film silicon solar cells. Amorphous silicon shows creation of metastable defect states, originating from elevated concentration of dangling bonds during light exposure. The metastable defect states work as recombination centers, and mostly affects quality of intrinsic layer in solar cells. In this paper we present results of light induced degradation in thin film silicon solar cells and discussion on physical origin, mechanism and practical solutions of light induced degradation in thin film silicon solar cells. In-situ light-soaking IV measurement techniques are presented. We also present thin film silicon material with silicon nano-quantum dots embedded within amorphous matrix, which shows superior stability during light-soaking. Our results suggest that solar cell using silicon nano-quantum dots in abosrber layer shows superior stability under light soaking, compared to the conventional amorphous silicon solar cell.
Keywords
hydrogenated amorphous silicon; thin film silicon solar cells; nano-quantum dot silicon thin film solar cell; light-induced degradation;
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