• Journal of the Institute of Electronics Engineers of Korea TC
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• v.45 no.10
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• pp.59-64
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• 2008

In this paper an adjustable linear gain equalizer which is operated from 6GHz to 18GHz in order to apply wideband RF circuit System is proposed and fabricated on $Al_2O_3$ substrate using thin film process. An adjustable linear gain equalizer is proposed to T type circuit and designed to aim on variable slope $-7dB{\sim}-13dB$ using the PIN Diode

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2005.11a
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• pp.293-296
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• 2005

This paper presents the design of linear and circular polarization baseball- shaped circular microstrip antenna (BCMA) with 3-dimensional structure using perturbation effect to reduce its size, which runs at 1.575GHz frequency bandwidth. As a result, the size of linear polarized antenna could be reduced up to 23.7% in patch diameter and 41.8% in its area. Linear polarized antenna has -26.04dB of return loss, 69MHz(4.38%) of -l0dB bandwidth, 4.51dBd of gain, and its -3dB beamwidth are 99$^{\circ}$ in E-plane, 83$^{\circ}$ in H-plane. Circular polarized antenna has -17.43dB of return loss, 113.7MHz(7.2%) of -l0dB bandwidth, 2dBd of gain, 2dB of axial ratio and its -3dB beamwidth are 87$^{\circ}$, 86$^{\circ}$ x-axis polarized, 80$^{\circ}$, 84$^{\circ}$ y-axis polarized. It has 82mm of diameter, which is 28.5% of linear polarized CMPA. Therefore, in this paper we verified that baseball-shaped 3-dimensional structure of circular microstrip patch antenna applied with perturbation effect is appropriate for miniaturization.

• Journal of the Korean Institute of Telematics and Electronics B
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• v.31B no.7
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• pp.91-100
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• 1994

The lapped orthogonal transform(LOT) has been recently proposed to alleviate the blocking effects in transform coding. The LOT is known to provide an improved coding gain than the conventional transform. In this paper, we propose a prefilter approach to design the LOT bases with the view of maximizing the transform coding gain. Since the nonlinear phase basis is inappropriate to the image coding only the linear phase basis is considered in this paper. Our approach is mainly based on decomposing the transform matrix into the orthogonal matrix and the prefilter matrix. And by assuming that the input is the 1st order Markov source we design the prefilter matrix and the orthogonal matirx maximizing the transform coding gain. The computer simulation results show that the proposed LOT provides about 0.6~0.8 dB PSNR gain over the DCT and about 0.2~0.3 dB PSNR gain over the conventional LOT [7]. Also, the subjective test reveals that the proposed LOT shows less blocking effect than the DCT.

• ETRI Journal
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• v.32 no.4
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• pp.588-595
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• 2010

This paper proposes encoding and decoding for nonlinear product codes and investigates the performance of nonlinear product codes. The proposed nonlinear product codes are constructed as N-dimensional product codes where the constituent codes are nonlinear binary codes derived from the linear codes over higher order alphabets, for example, Preparata or Kerdock codes. The performance and the complexity of the proposed construction are evaluated using the well-known nonlinear Nordstrom-Robinson code, which is presented in the generalized array code format with a low complexity trellis. The proposed construction shows the additional coding gain, reduced error floor, and lower implementation complexity. The (64, 24, 12) nonlinear binary product code has an effective gain of about 2.5 dB and 1 dB gain at a BER of $10^{-6}$ when compared to the (64, 15, 16) linear product code and the (64, 24, 10) linear product code, respectively. The (256, 64, 36) nonlinear binary product code composed of two Nordstrom-Robinson codes has an effective gain of about 0.7 dB at a BER of $10^{-5}$ when compared to the (256, 64, 25) linear product code composed of two (16, 8, 5) quasi-cyclic codes.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.11
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• pp.635-639
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• 2016

In the devices used in the microwave frequency band, the gain decreases as the frequency increases due to the parasitic component. To compensate for these characteristics, a linear gain equalizer with an opposite slope is needed in wideband systems, such as those used for electronic warfare. In this study, a linear gain equalizer that can be used in the 18 ~ 40GHz band is designed and fabricated. Circuit design and momentum design (optimizations) were carried out to reduce the errors between design and manufacturing. A thin film process is used to minimize the parasitic components within the implementation frequency band. A sheet resistance of 100 ohm/square was employed to minimize the wavelength variation due to the length of the thin film resistor. This linear gain equalizer is a structure that combines a quarter wavelength-resonator on a series microstrip line with a resistor. All three 1/4 wavelength short resonators were used. The fabricated linear gain equalizer has a loss of more than -5dB at 40GHz and a 6dB slope in the 18 ~ 40GHz band. By using the manufactured gain equalizer in a multi-stage connected device such as an electronic warfare receiver, the gain flatness degradation with increasing frequency can be reduced.

• ETRI Journal
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• v.33 no.3
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• pp.462-465
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• 2011

A millimeter-wave (mm-wave) high-linear low-noise amplifier (LNA) is presented using a 0.18 ${\mu}m$ standard CMOS process. To improve the linearity of mm-wave LNAs, we adopted the multiple-gate transistor (MGTR) topology used in the low frequency range. By using an MGTR having a different gate-source bias at the last stage of LNAs, third-order input intercept point (IIP3) and 1-dB gain compression point ($P_{1dB}$) increase by 4.85 dBm and 4 dBm, respectively, without noise figure (NF) degradation. At 33 GHz, the proposed LNAs represent 9.5 dB gain, 7.13 dB NF, and 6.25 dBm IIP3.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.12 no.1
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• pp.37-43
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• 2001

In this paper, we designed a linear power amplifier considering its delay characteristics fur wideband operation. The power amplifier has the gain of 37 dB and is designed in 3-stage typ with 1W output power. The error amplifier has the gain of 55 dB and is designed in 4-stage typ. And directional coupler and power divider are designed. Vector modulator is used to adjust magnitude and phase of signal. A linear power amplifier, that is assembled with each modules, is designed considering the delay characteristics for 2.11~2.2 GHz. Its C/I3 ratio has been improved by B5 dB for bandwidth of 30 MHz.

• Proceedings of the IEEK Conference
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• summer
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• pp.221-224
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• 2004

This paper proposed an ultra low-power CMOS exponential voltage-mode circuit using the Pseudo-exponential function for realizing the exponential characteristics. The proposed circuit provides high dB-linear output voltage range at low-voltage applications. In a $0.25\;\mu m$ CMOS process, the simulations show more than 35 dB output voltage range and 26 dB with the linearity error less than $\pm0.5\;dB.$ The average current consumption is less than 80 uA. The proposed circuit can be used for the design of an extremely low-power variable gain amplifier (VGA) and automatic gain control (AGC).

• Proceedings of the IEEK Conference
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• 2004.08c
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• pp.494-498
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• 2004

In this paper, the design of a CMOS exponential V-I converter (EVIC,) based on Taylor's concept, is presented. The composite NMOS transistor is used for realizing the exponential characteristics. In a 0.25 $\mu$m CMOS process, the simulations show more than 20 dB output current range and 15 dB linear range with the linearity error less than $\pm$ 0.5 dB. The power dissipation is less than 0.3 mW with $\pm$ 1.5 V supply voltage. The proposed EVIC can be used for the design of an extremely low­voltage and low-power variable gain amplifier (VGA) and automatic gain control (AGC).

• ETRI Journal
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• v.16 no.4
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• pp.1-11
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• 1995

A GaAs power metal semiconductor field effect transistor (MESFET) operating at a voltage as low as 3.3V has been developed with the best performance for digital handheld phone. The device has been fabricated on an epitaxial layer with a low-high doped structure grown by molecular beam epitaxy. The MESFET, fabricated using $0.8{\mu}m$ design rule, showed a maximum drain current density of 330 mA/mm at $V_{gs}$ =0.5V and a gate-to-drain breakdown volt-age of 28 V. The MESFET tested at a 3.3 V drain bias and a 900 MHz operation frequency displayed an output power of 32.5-dBm and a power added efficiency of 68%. The associate power gain at 20 dBm input power and the linear gain were 12.5dB and 16.5dB, respectively. Two tone testing measured at 900.00MHz and 900.03MHz showed that a third-order intercept point is 49.5 dBm. The power MESFET developed in this work is expected to be useful as a power amplifying device for digital hand-held phone because the high linear gain can deliver a high power added efficiency in the linear operation region of output power and the high third-order intercept point can reduce the third-order intermodulation.